[Pixel]<DATools7.0>Spinifex25>SXNMos.mesa!1

SXNMos.mesa

Written by Shand, September 12, 1983 11:40 pm

Last Edited by: Shand, March 12, 1985 4:23:50 pm PST

Last Edited by: Spreitzer, January 14, 1985 10:35:35 pm PST

Last Edited by: Jacobi, December 18, 1984 4:49:59 pm PST

Last edited by: Christian Jacobi, November 7, 1986 4:37:26 pm PST

Bowers, September 13, 1985 3:03:18 pm PDT

Last edited by: gbb March 26, 1986 2:52:33 pm PST

DIRECTORY

CD USING [Instance, InstanceRep, Layer, Number, Position, Rect],

CDBasics,

CDProperties USING [GetInstanceProp],

CDSimpleRules USING [MinDist, MinWidth],

IO USING [char, int, Put, PutF, PutRope, rope],

NMos USING [lambda, nmos, dif, pol, met, ovg, cut],

NMosContacts USING [ContactPtr],

NMosTransistors USING [enhancement, strongDepletion, TransistorPtr, weakDepletion, zeroTresh],

Rope USING [Cat, ROPE],

SX USING [AddBox, AddRect, AdjustNode, AttachedNode, Circuit, CircuitNode, Constraint, ConstraintArray, ConstraintIndex, ConstraintResolution, ConversionProc, CreateLinkage, GeometricRule, IllegalConstruct, LinkageAttach, MapRec, MergeNode, nodeIndex, NodeLinkage, spaceIndex, SpinifexLayerIndex, techCIndexBase, TechHandle, violateIndex],

SXOutput USING [LinkageHousekeeper, LinkagePrintProc],

SXOutputPrivate USING [GetANaming, NameTransType, Naming, PrintNaming, PrintRoseInstantiationTransformation, UnNameTransType],

SXQuadTree USING [RectDelta],

SXTechnology USING [ESWGrow, NESGrow, PerDrawRectProc, ProcessMosTransistor, RegisterSpinifexObjectProcs, RegisterTechnologyHandle, ReportDifProc, ResolutionTable, SetUpResolution, SWNGrow, WNEGrow],

TerminalIO USING [PutRope];

SXNMos: CEDAR PROGRAM

IMPORTS CDBasics, CDProperties, CDSimpleRules, IO, NMos, Rope, SX, SXOutputPrivate, SXTechnology, TerminalIO =

BEGIN

l: CD.Number ~ NMos.lambda;

Basic rules not provided by CDSimpleRules

polOverDif: CD.Number = NMos.lambda;

These numbers are halved (sorry about any confusion this may cause)

difToPolExtSep: CD.Number = 0;

polSep: CD.Number = NMos.lambda;

difToPolSep: CD.Number = difToPolExtSep + polSep; -- not halved!

contactWidth: CD.Number = 4 * NMos.lambda;

New Regime Transistor converters (IE the Shand unified xstr representaion)

ConvertNMosTransistor: SX.ConversionProc ~ {

p: NMosTransistors.TransistorPtr = NARROW[ob.specific];

size: CD.Position ← CDBasics.SizeOfRect[ob.bbox];

xstr: REF SX.NodeLinkage;

gateNode, sourceNode, drainNode, metNode: REF SX.CircuitNode;

polExt: CD.Number ~ IF p.pullup THEN MIN[ (size.x-contactWidth)/2, p.wExt] ELSE p.wExt;

IF p.bendList = NIL THEN { -- Oh this is easy!

IF ~ p.angle THEN { -- Oh this is easy!

Add poly boxes

gateNode ← cir.AddBox[ spinifexLayer~polSpinifex, dim~[0, p.lExt, polExt, p.lExt+p.length], trans~trans, interestBloat~SXTechnology.SWNGrow[(CDSimpleRules.MinDist[NMos.pol, NMos.pol]/2)]];

[] ← cir.AddBox[ spinifexLayer~polSpinifex, dim~[polExt, p.lExt, size.x-polExt, p.lExt+p.length], trans~trans, value~gateNode];

[] ← cir.AddBox[ spinifexLayer~polSpinifex, dim~[size.x-polExt, p.lExt, size.x, p.lExt+p.length], trans~trans, interestBloat~SXTechnology.NESGrow[(CDSimpleRules.MinDist[NMos.pol, NMos.pol]/2)], value~gateNode];

Add rects for poly exclusion

IF p.lExt-difToPolSep > 0 THEN {

At the top

[] ← cir.AddBox[ spinifexLayer~polSpinifex, dim~[polExt, p.lExt+p.length+difToPolSep, size.x-polExt, size.y], trans~trans,
interestBloat~SXTechnology.WNEGrow[difToPolExtSep],
value~pCnstr[pExcl]];

... and the bottom

[] ← cir.AddBox[ spinifexLayer~polSpinifex, dim~[p.wExt, 0, size.x-p.wExt, p.lExt-difToPolSep], trans~trans, interestBloat~SXTechnology.ESWGrow[difToPolExtSep],
value~pCnstr[pExcl]]

};

Add rects for channel lead-in.

At the top

[] ← cir.AddBox[ spinifexLayer~polSpinifex, dim~[polExt, p.lExt+p.length, size.x-polExt, p.lExt+p.length+difToPolSep], trans~trans, value~pCnstr[pChE]];

... and the bottom

[] ← cir.AddBox[ spinifexLayer~polSpinifex, dim~[p.wExt, p.lExt-difToPolSep, size.x-p.wExt, p.lExt], trans~trans, value~pCnstr[pChE]];

Fill channel gap

[] ← cir.AddBox[ spinifexLayer~difSpinifex, dim~[p.wExt, p.lExt, size.x-p.wExt, p.lExt+p.length], trans~trans, interestBloat~[dx1~ (CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2), dy1~ 0, dx2~ (CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2), dy2~ 0], value~dCnstr[dCh]];

IF polExt < p.wExt THEN [] ← cir.AddBox[ spinifexLayer~difSpinifex, dim~[polExt, p.lExt+p.length-l, size.x-polExt, p.lExt+p.length], trans~trans, interestBloat~[dx1~ (CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2), dy1~ 0, dx2~ (CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2), dy2~ (CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2)], value~dCnstr[dCh]];

Add rects for diff width spacing and connection

sourceNode ← cir.AddBox[ spinifexLayer~difSpinifex, dim~[polExt, p.lExt+p.length, size.x-polExt, size.y], trans~trans, interestBloat~SXTechnology.WNEGrow[(CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2)]];

drainNode ← cir.AddBox[ spinifexLayer~difSpinifex, dim~[p.wExt, 0, size.x-p.wExt, p.lExt], trans~trans, interestBloat~SXTechnology.ESWGrow[(CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2)]];

IF p.pullup THEN {

metNode ← cir.AddRect [lev~NMos.met, dim~[(size.x-contactWidth)/2, size.y-6*l, (size.x+contactWidth)/2, size.y], trans~trans];

}

ELSE metNode ← NIL

}

ELSE { -- Oh no not a bent transistor yetcchh!

sourceDrainList: LIST OF REF SX.CircuitNode;

sourceDrainCount: INTEGER;

sourceHint: REF SX.CircuitNode ← NIL;

NoteSourceHint: SXTechnology.ReportDifProc ~ {

sourceHint ← difNode

};

[gateNode, sourceDrainList, sourceDrainCount] ← SXTechnology.ProcessMosTransistor[ob, trans, cir, difSpinifex, polSpinifex, dCnstr[dCh], pCnstr[pChE], (CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2), difToPolSep, MapMaterial, cir, NoteSourceHint];

IF sourceDrainCount = 2 THEN {

sourceNode ← sourceDrainList.first;

drainNode ← sourceDrainList.rest.first;

IF p.pullup THEN {

SELECT sourceHint FROM

sourceNode => NULL;

drainNode => {

drainNode ← sourceNode;

sourceNode ← sourceHint

};

ENDCASE => ERROR -- Including case when sourceHint = NIL

}

ELSE {

TerminalIO.PutRope[ Rope.Cat["Xstr with ", (SELECT sourceDrainCount FROM 0 => "no", 1 => "only 1", ENDCASE => "more than 2"), " sources/drains not included in circuit description\n"]];

RETURN

}

};

Add Linkages for transistor.

xstr ← cir.CreateLinkage[NEW[CD.InstanceRep←[ob: ob]], p.length, p.width];

We're a lot smarter than this program, so let's adjust the area and perim values its got.

SX.AdjustNode[ gateNode, polSpinifex, size.y*p.length, (size.y+p.length)*2, absolute];

SX.AdjustNode[ sourceNode, difSpinifex, (size.y-(p.lExt+p.length))*(size.x-2*polExt), (size.y-(p.lExt+p.length))*2 + size.x-2*polExt, absolute]; -- Ignore perim leading into channel.

SX.AdjustNode[ drainNode, difSpinifex, p.lExt*p.width, 2*p.lExt + p.width, absolute]; -- Ignore perim leading into channel.

IF p.pullup THEN {

cir.MergeNode[ gateNode, sourceNode]; sourceNode ← gateNode;

cir.MergeNode[ gateNode, metNode]; metNode ← gateNode;

};

SX.LinkageAttach[link~xstr, attachType~$Gate, node~gateNode];

SX.LinkageAttach[link~xstr, attachType~$Source, node~sourceNode];

SX.LinkageAttach[link~xstr, attachType~$Drain, node~drainNode];

};

Material mapping

MapMaterial: SXTechnology.PerDrawRectProc ~ {

[r: CD.Rect, l: CD.Layer, data: REF ANY] RETURNS [TransistorMaterial]

cir: REF SX.Circuit ~ NARROW [data, REF SX.Circuit];

SELECT l FROM

NMos.dif => RETURN [diffusion];

NMos.pol => RETURN [polysilicon];

NMos.met => {

[] ← cir.AddRect[ lev~ NMos.met, dim~ r];

RETURN [nothing];

};

NMos.cut => {

RETURN [postProcess];

};

ENDCASE => RETURN [nothing];

};

Contact converters

ConvertNMosContactDifAndPol: SX.ConversionProc ~ {

box: CD.Rect ← ob.bbox;

node: REF SX.CircuitNode;

Attach two rectangles to the same node.

node ← cir.AddRect[ lev~NMos.met, dim~box, trans~trans];

[] ← cir.AddRect[ lev~ob.layer, dim~box, trans~trans, value~node];

IF ob.layer = NMos.dif THEN

[] ← cir.AddBox[ spinifexLayer~polSpinifex, dim~box, trans~trans, value~pCnstr[pExCon]];

};

ConvertNMosMmContact: SX.ConversionProc ~ {

[appl: CD.Instance, trans: CD.Transformation, cir: REF SX.Circuit]

s: CD.Position = CDBasics.SizeOfRect[ob.bbox];

[] ← cir.AddBox [
spinifexLayer: metSpinifex,
dim: [l/2, l/2, s.x-l/2, s.y-l/2], -- cut bloated by 1/2 lambda
trans: trans,
value: mCnstr[mCutEx]];

[] ← cir.AddBox [
spinifexLayer: metSpinifex,
dim: [l, l, s.x-l, s.y-l], -- cut unbloated
trans: trans,
value: mCnstr[mCut]];};

ConvertNMosButtingContact: SX.ConversionProc ~ {

[appl: CD.Instance, pos: CD.Position, orient: CD.Orientation, cir: REF SX.Circuit]

rimWidth: CD.Number ~ l;

box: CD.Rect ← ob.bbox;

size: CD.Position ← CDBasics.SizeOfRect[box];

polSize: CD.Number ~ size.y/2;

node: REF SX.CircuitNode;

node ← cir.AddRect[ lev~NMos.met, dim~box, trans~trans];

[] ← cir.AddRect[ lev~NMos.pol, dim~[0,0, size.x, polSize], trans~trans, value~node];

Add rect for poly exclusion

[] ← cir.AddBox[ spinifexLayer~polSpinifex,
dim~[-rimWidth,polSize, size.x+rimWidth, polSize+difToPolSep], trans~trans, value~pCnstr[pChE]];

[] ← cir.AddBox [spinifexLayer~polSpinifex,
dim~[-rimWidth,polSize-rimWidth, 0, polSize], trans~trans, value~pCnstr[pDxorP]];

[] ← cir.AddBox [spinifexLayer~polSpinifex,
dim~[size.x,polSize-rimWidth, size.x+rimWidth, polSize], trans~trans, value~pCnstr[pDxorP]];

[] ← cir.AddBox [spinifexLayer~polSpinifex,
dim~[0,polSize+difToPolSep, size.x, size.y], trans~trans,
interestBloat~SXTechnology.WNEGrow[difToPolExtSep],
value~pCnstr[pExCon]];

Add rect for diff width spacing and connection

[] ← cir.AddBox [spinifexLayer~difSpinifex,
dim~[0,polSize, size.x, size.y], trans~trans,
interestBloat~[(CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2), (CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2), (CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2), (CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2)], value~node];

};

ConvertNMosBuriedContact: SX.ConversionProc ~ {

[appl: CD.Instance, pos: CD.Position, orient: CD.Orientation, cir: REF SX.Circuit]

Buried contacts come in three flavours, Pol-Surround, Dif-Surround and Crossing. The buried contacts in chipndale are parameterized by lExt and wExt, their interpretation is as follows: Diff always extends 1l to the left, material above/below and to the right is determined by lExt and wExt respectively. 2l is the pivotal value, below 2l the material is Pol, at 2l or above the material is Diff. (Note: some combinations give Diff on all four sides, it is assumed that such combinations will not be created.)

s: CD.Position ~ CDBasics.SizeOfRect[ob.bbox];

cp: NMosContacts.ContactPtr ~ NARROW[ob.specific];

node: REF SX.CircuitNode ~ cir.AddRect[ lev~NMos.pol, dim~[2*l, cp.lExt, s.x-cp.wExt, s.y-cp.lExt], trans~trans];

Cut

[] ← cir.AddBox [
spinifexLayer: metSpinifex,
dim: [l/2, l/2, s.x-l/2, s.y-l/2], -- actual dimensions of cut
trans: trans,
value: mCnstr[mBCCut]];

[] ← cir.AddBox [
spinifexLayer: metSpinifex,
dim: [-l/2, -l/2, s.x+l/2, s.y+l/2], -- cut bloated by 1 lambda
trans: trans,
value: mCnstr[mBCEx]];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [l/2, l/2, s.x-l/2, s.y-l/2], -- actual dimensions of cut
trans: trans,
value: pCnstr[pBCCut]];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [0, 0, s.x, s.y], --cut Bloated by 1/2 lambda (poly is bloated by lambda)
trans: trans,
value: pCnstr[pBCExcl]];

SELECT TRUE FROM

cp.lExt < 2*l AND cp.wExt < 2*l => {

Polysilicon Surround

wex: CD.Number ~ MAX[cp.wExt+l, 2*l];

lex: CD.Number ~ MAX[cp.lExt+l, 2*l];

bcExclConstraint: SX.Constraint ← pCnstr[pBCExcl]^;

bcExclConstraint.specificCorrespondingNode ← node;

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [-l/2, -l/2, 0, s.y+l/2], -- buried contact poly exclude (left side)
trans: trans,
value: NEW[Constraint ← bcExclConstraint]];

[] ← cir.AddRect [
lev: ob.layer,
dim: [l, lex, 2*l, s.y-lex],
trans: trans,
value: node];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [2*l-difToPolSep, lex, 2*l, s.y-lex],
trans: trans,
value: pCnstr[pChE]];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [2*l, lex, s.x-wex, s.y-lex],
trans: trans,
value: pCnstr[pDandP]];

[] ← cir.AddBox [
spinifexLayer: difSpinifex,
dim: [2*l, lex, s.x-wex, s.y-lex],
trans: trans,
value: node];

};

cp.lExt < 2*l AND cp.wExt >= 2*l => {

Polysilicon/Diffusion Crossing.

lex: CD.Number ~ MAX[cp.lExt+l, 2*l];

bcExclConstraint: SX.Constraint ← pCnstr[pBCExcl]^;

bcExclConstraint.specificCorrespondingNode ← node;

Cut

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [s.x, -l/2, s.x+l/2, s.y+l/2], -- buried contact poly exclude (right side)
trans: trans,
value: NEW[Constraint ← bcExclConstraint]];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [-l/2, -l/2, 0, s.y+l/2], -- buried contact poly exclude (left side)
trans: trans,
value: NEW[Constraint ← bcExclConstraint]];

[] ← cir.AddBox [
spinifexLayer: difSpinifex,
dim: [2*l, lex, s.x-cp.wExt, s.y-lex],
trans: trans,
value: node];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [2*l, lex, s.x-cp.wExt, s.y-lex],
trans: trans,
value: pCnstr[pDandP]];

Left side.

[] ← cir.AddRect [lev: ob.layer,
dim: [l, lex, 2*l, s.y-lex],
trans: trans,
value: node];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [2*l-difToPolSep, lex, 2*l, s.y-lex],
trans: trans,
value: pCnstr[pChE]];

Right side.

[] ← cir.AddRect [
lev: ob.layer,
dim: [s.x-cp.wExt, lex, s.x-(cp.wExt-l), s.y-lex],
trans: trans,
value: node];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [s.x-cp.wExt, lex, s.x-(cp.wExt-difToPolSep), s.y-lex],
trans: trans,
value: pCnstr[pChE]];

};

cp.lExt >= 2*l AND cp.wExt < 2*l => {

Diffusion Surround

wex: CD.Number ~ MAX[cp.wExt+l, 2*l];

lex: CD.Number ~ cp.lExt-l;

bcExclConstraint: SX.Constraint ← pCnstr[pBCExcl]^;

bcExclConstraint.specificCorrespondingNode ← node;

Cut

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [-l/2, -l/2, l/2, s.y+l/2], -- buried contact poly exclude (left side)
trans: trans,
value: NEW[Constraint ← bcExclConstraint]];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [l/2, s.y, s.x+l/2, s.y+l/2], -- buried contact poly exclude (top side)
trans: trans,
value: NEW[Constraint ← bcExclConstraint]];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [l/2, -l/2, s.x, 0], -- buried contact poly exclude (bottom side)
trans: trans,
value: NEW[Constraint ← bcExclConstraint]];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [2*l, cp.lExt, s.x-wex, s.y-cp.lExt],
trans: trans,
value: pCnstr[pDandP]];

Left side.

[] ← cir.AddRect [
lev: ob.layer,
dim: [l, lex, s.x-wex, s.y-lex],
trans: trans,
value: node];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [2*l-difToPolSep, lex, 2*l, s.y-lex],
trans: trans,
value: pCnstr[pChE]];

Top.

[] ← cir.AddRect [
lev: ob.layer,
dim: [2*l, s.y-cp.lExt, s.x-wex, s.y-lex],
trans: trans,
value: node];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [2*l, s.y-cp.lExt, s.x-wex, s.y-(cp.lExt-difToPolSep)],
trans: trans,
value: pCnstr[pChE]];

Bottom.

[] ← cir.AddRect [
lev: ob.layer,
dim: [2*l, lex, s.x-wex, cp.lExt],
trans: trans,
value: node];

[] ← cir.AddBox [
spinifexLayer: polSpinifex,
dim: [2*l, cp.lExt-difToPolSep, s.x-wex, cp.lExt],
trans: trans,
value: pCnstr[pChE]];

};

cp.lExt >= 2*l AND cp.wExt >= 2*l => {

Diffusion Surround ! on all sides ???

ERROR SX.IllegalConstruct [ob.class.interestRect[ob], "Polysilicon surrounded by diffusion or all sides in Buried Contact"];

};

ENDCASE => ERROR;

};

Thyme and Rosemary

RoseNMosTransistor: SXOutput.LinkagePrintProc ~ {

[desWDir: ROPE, dfStream, cellStream: IO.STREAM, linkage: REF NodeLinkage, name: Rope.ROPE, PrintNode: NodePrintProc]

PrintAttachment: PROCEDURE [key: ATOM, portName: Rope.ROPE] ~ {

cellStream.Put[ IO.rope[" (\""], IO.rope[portName], IO.rope["\" "]];

FOR attachments: LIST OF REF SX.AttachedNode ← linkage.nodes, attachments.rest WHILE attachments # NIL DO

IF attachments.first.attachmentType = key THEN {

PrintNode[cellStream, attachments.first.node];

cellStream.PutRope[")"];

RETURN

}

ENDLOOP;

cellStream.PutRope[ "\"?\")"];

};

p: NMosTransistors.TransistorPtr ~ NARROW [linkage.source.ob.specific];

naming: SXOutputPrivate.Naming ← SXOutputPrivate.GetANaming [linkage.source];

cellStream.PutRope ["(CI "];

SXOutputPrivate.PrintNaming [

cellStream,

naming,

Rope.Cat[" \"", SXOutputPrivate.NameTransType [

desWDir: desWDir,

obj: linkage.source.ob,

dfStream: dfStream,

type: $n,

mode: IF p.pullup THEN $D ELSE SELECT p.implant FROM

NMosTransistors.enhancement => $E,

NMosTransistors.strongDepletion => $D,

NMosTransistors.zeroTresh => $Z,

NMosTransistors.weakDepletion => $W,

ENDCASE => ERROR,

length: p.length,

width: p.width], "\""]];

SXOutputPrivate.PrintRoseInstantiationTransformation [cellStream, linkage.source];

cellStream.PutRope [" (CIC"];

PrintAttachment [$Gate, "gate"];

PrintAttachment [$Source, "in"];

PrintAttachment [$Drain, "out"];

cellStream.PutRope ["))"]

};

ThymeNMosTransistor: SXOutput.LinkagePrintProc ~ {

[desWDir: ROPE, dfStream, cellStream: IO.STREAM, linkage: REF NodeLinkage, PrintNode: NodePrintProc]

PrintAttachment: PROCEDURE [ key: ATOM] ~ {

FOR attachments: LIST OF REF SX.AttachedNode ← linkage.nodes, attachments.rest WHILE attachments # NIL DO

IF attachments.first.attachmentType = key THEN {

PrintNode [cellStream, attachments.first.node];

RETURN

}

ENDLOOP;

cellStream.Put[IO.char['?]];

};

p: NMosTransistors.TransistorPtr ~ NARROW [linkage.source.ob.specific];

defaultL: INTEGER ~ 2*l;

propertyValue: REF;

cellStream.Put [IO.rope[name], IO.rope[": "]];

cellStream.PutRope [IF ~p.pullup THEN

SELECT p.implant FROM

NMosTransistors.enhancement => "ETran[",

NMosTransistors.strongDepletion => "DTran[",

NMosTransistors.zeroTresh => "ZTran[",

NMosTransistors.weakDepletion => "WTran",

ENDCASE => ERROR

ELSE

"DTran ["

];

PrintAttachment [$Gate]; cellStream.Put [IO.char[',]];

PrintAttachment [$Source]; cellStream.Put [IO.char[',]];

PrintAttachment [$Drain]; cellStream.Put [IO.char['|]];

cellStream.PutF [" W←N*%g", IO.int[p.width/l]];

IF p.length # defaultL THEN cellStream.PutF [", L←%g", IO.int[p.length/l]];

The following is a quick hack to allow John Ousterhout to test Crystal. In a later stage, SX.AttachedNode shall receive an additional field for this info. At the moment it is not clear yet, how the user interface should be like.

propertyValue ← CDProperties.GetInstanceProp [from: linkage.source, prop: $Crystal];

WITH propertyValue SELECT FROM

crystalHack: Rope.ROPE => IO.Put [stream: cellStream, v1: IO.rope["; "], v2: IO.rope[crystalHack]];

ENDCASE => IF propertyValue # NIL THEN TerminalIO.PutRope [" $Crystal property must be a rope. /n"];

cellStream.PutRope ["];"]

};

Module Initialization

Global constants and variables.

nMosHandle: REF SX.TechHandle;

difSpinifex: SX.SpinifexLayerIndex ~ SX.SpinifexLayerIndex.FIRST;

polSpinifex: SX.SpinifexLayerIndex ~ difSpinifex.SUCC;

metSpinifex: SX.SpinifexLayerIndex ~ polSpinifex.SUCC;

Constraint: TYPE ~ SX.Constraint;

Diffusion layer

dCnstr: REF SX.ConstraintArray ← NEW[SX.ConstraintArray]; -- Diffusion constraints

dCh: SX.ConstraintIndex ~ SX.techCIndexBase; -- Diffusion channel

Poly layer

pCnstr: REF SX.ConstraintArray ← NEW[SX.ConstraintArray]; -- Poly constraints

pExcl: SX.ConstraintIndex ~ SX.techCIndexBase; -- Poly not allowed here.

pExCon: SX.ConstraintIndex ~ pExcl.SUCC; -- Poly not allowed here because of Contact to n-Diffusion.

pDPErr: SX.ConstraintIndex ~ pExCon.SUCC; -- Poly and Diffusion found together here.

pChE: SX.ConstraintIndex ~ pDPErr.SUCC; -- Close to Xstr Gate, (Channel Edge).

pDxorP: SX.ConstraintIndex ~ pChE.SUCC; -- Diffusion XOR Poly allowed here.

pDandP: SX.ConstraintIndex ~ pDxorP.SUCC; -- Diffusion AND Poly may appear together here.

pBCExcl: SX.ConstraintIndex = pDandP.SUCC; -- Buried Contact Cut Exclusion

pBCErr: SX.ConstraintIndex = pBCExcl.SUCC; -- Buried Contact Cut Separation violation

pBCCut: SX.ConstraintIndex = pBCErr.SUCC; -- Buried Contact Cut

mCnstr: REF SX.ConstraintArray ← NEW[SX.ConstraintArray]; -- metal constraints

mBCEx: SX.ConstraintIndex = SX.techCIndexBase; -- Buried Contact Cut Bloated

mBCErr: SX.ConstraintIndex = mBCEx.SUCC; -- Buried Contact Cut Separation violation

mBCCut: SX.ConstraintIndex = mBCErr.SUCC; -- Buried Contact Cut Unbloated

mCutEx: SX.ConstraintIndex = mBCCut.SUCC; -- Metal Contact Cut Bloated

mCut: SX.ConstraintIndex = mCutEx.SUCC; -- Metal Contact Cut Unbloated

mBCExM: SX.ConstraintIndex = mCut.SUCC; -- Buried Contact Cut Bloated over metal

mBCErrM: SX.ConstraintIndex = mBCExM.SUCC; -- Buried Contact Cut Separation violation over metal

mBCCutM: SX.ConstraintIndex = mBCErrM.SUCC; -- Buried Contact Cut Unbloated over metal

mCutExM: SX.ConstraintIndex = mBCCutM.SUCC; -- Metal Contact Cut Bloated over metal

mCutM: SX.ConstraintIndex = mCutExM.SUCC; -- Metal Contact Cut Unbloated over metal

Init: PROCEDURE ~ {

GeometricRule: TYPE ~ SX.GeometricRule;

difSpacingRule, difWidthRule: REF GeometricRule;

polSpacingRule, polWidthRule, polDifSepRuleA, polDifSepRuleB, polOverDifRule, polBuriedSpacingRuleA, polBuriedSpacingRuleB: REF GeometricRule;

metSpacingRule, metWidthRule, bcCutSpacingRule, bcMetalCutSpacingRuleA, bcMetalCutSpacingRuleB: REF GeometricRule;

detectOpaqueViolation: REF GeometricRule;

TriggerMap: TYPE ~ PACKED ARRAY SX.ConstraintIndex OF BOOLEAN ← ALL[FALSE];

spaceRuleTrigger: TriggerMap;

widthRuleTrigger: TriggerMap;

polOverDifTrigger1, polOverDifTrigger2, polDifSepTriggerA, polDifSepTriggerB: TriggerMap;

difSpaceTrigger1: TriggerMap;

polWidthTrigger: TriggerMap;

polBuriedSpaceTriggerA, polBuriedSpaceTriggerB, polSpaceTrigger, metSpaceTrigger, metWidthTrigger: TriggerMap;

bcSpaceTrigger, bcMetalCutSpacingTriggerA, bcMetalCutSpacingTriggerB: TriggerMap;

difResolution: REF SX.ConstraintResolution;

polyResolution: REF SX.ConstraintResolution;

metResolution: REF SX.ConstraintResolution;

Construction of the Layer Constraints.

dCnstr[dCh] ← NEW[ Constraint ← [ $DifChannel, dCh]];

pCnstr[pExcl] ← NEW[ Constraint ← [ $ExcludePol, pExcl]];

pCnstr[pExCon] ← NEW[ Constraint ← [ $ExcludePolByContact, pExCon]];

pCnstr[pDPErr] ← NEW[ Constraint ← [ $PolDifError, pDPErr]];

pCnstr[pChE] ← NEW[ Constraint ← [ $ChannelEdge, pChE]];

pCnstr[pDxorP]← NEW[ Constraint ← [ $PolXorDif, pDxorP]];

pCnstr[pDandP] ← NEW[ Constraint ← [ $PolAndDif, pDandP, TRUE, polSpinifex]];

pCnstr[pBCExcl] ← NEW[ Constraint ← [ $PolyBCExcl, pBCExcl, TRUE]];

pCnstr[pBCErr] ← NEW[ Constraint ← [ $PolyBCErr, pBCErr, TRUE]];

pCnstr[pBCCut] ← NEW[ Constraint ← [ $PolyBCCut, pBCCut]];

mCnstr[mBCEx] ← NEW[ Constraint ← [ $BCExclCut, mBCEx]];

mCnstr[mBCErr] ← NEW[ Constraint ← [ $BCErr, mBCErr]];

mCnstr[mBCCut] ← NEW[ Constraint ← [ $BCCut, mBCCut]];

mCnstr[mCutEx] ← NEW[ Constraint ← [ $CutExcl, mCutEx]];

mCnstr[mCut] ← NEW[ Constraint ← [ $Cut, mCut]];

mCnstr[mBCExM] ← NEW[ Constraint ← [ $BCExclCutM, mBCExM]];

mCnstr[mBCErrM] ← NEW[ Constraint ← [ $BCErrM, mBCErrM]];

mCnstr[mBCCutM] ← NEW[ Constraint ← [ $BCCutM, mBCCutM]];

mCnstr[mCutExM] ← NEW[ Constraint ← [ $CutExclM, mCutExM]];

mCnstr[mCutM] ← NEW[ Constraint ← [ $CutM, mCutM]];

{

nd: SX.ConstraintIndex ~ SX.nodeIndex;

sp: SX.ConstraintIndex ~ SX.spaceIndex;

dResTab: SXTechnology.ResolutionTable ~ [

[ sp, nd, dCh, ,,,,,,,,,,,,],

[ nd, nd, dCh, ,,,,,,,,,,,,],

[ dCh, dCh, dCh, ,,,,,,,,,,,,],

,,,,,,,,,,,,

];

pResTab: SXTechnology.ResolutionTable = [

[ sp, nd, pExcl, pExCon, pDPErr, pChE, pDxorP, pDandP, pBCExcl, pBCErr, ,,,,,],

[ nd, nd, pDPErr, pDPErr, pDPErr, pDPErr, nd, pDandP, pBCErr, pBCErr, ,,,,,],

[ pExcl, pDPErr, pExcl, pExCon, pDPErr, pChE, pChE, pDandP, pExcl, pExcl, ,,,,,],

[ pExCon, pDPErr, pExCon, pExCon, pDPErr, pExCon, pExCon, pDandP, pExCon, pExCon, ,,,,,],

[ pDPErr, pDPErr, pDPErr, pDPErr, pDPErr, pDPErr, pDPErr, pDandP, pDPErr, pDPErr, ,,,,,],

[ pChE, pDPErr, pChE, pExCon, pDPErr, pChE, pChE, pDandP, pChE, pChE, ,,,,,],

[ pDxorP, nd, pChE, pExCon, pDPErr, pChE, pDxorP, pDandP, pDxorP, pDxorP, ,,,,,],

[ pDandP, pDandP, pDandP, pDandP, pDandP, pDandP, pDandP, pDandP, pDandP, pDandP, ,,,,,],

[ pBCExcl, pBCErr, pExcl, pExCon, pDPErr, pChE, pDxorP, pDandP, pBCExcl, pBCErr, ,,,,,],

[ pBCErr, pBCErr, pExcl, pExCon, pDPErr, pChE, pDxorP, pDandP, pBCErr, pBCErr, ,,,,,],

,,,,,

];

mResTab: SXTechnology.ResolutionTable = [

[ sp, nd, mBCEx, mBCErr, mBCCut, mCutEx, mCut, mBCExM, mBCErrM, mBCCutM, mCutExM, mCutM,,,,],

[ nd, nd, mBCExM, mBCErrM, mBCCutM, mCutExM, mCutM, mBCExM, mBCErrM, mBCCutM, mCutExM, mCutM,,,,],

[ mBCEx, mBCExM, mBCErr, mBCErr, mBCCut, mBCErr, mCut, mBCErrM, mBCErrM, mBCCutM, mBCErrM, mCutM,,,,],

[ mBCErr, mBCErrM, mBCErr, mBCErr, mBCCut, mBCErr, mCut, mBCErrM, mBCErrM, mBCCutM, mBCErrM, mCutM,,,,],

[ mBCCut, mBCCutM, mBCCut, mBCCut, mBCCut, mBCCut, mCut, mBCCutM, mBCCutM, mBCCutM, mBCCutM, mCutM,,,,],

[ mCutEx, mCutExM, mBCErr, mBCErr, mBCCut, mCutEx, mCut, mBCErrM, mBCErrM, mBCCutM, mCutExM, mCutM,,,,],

[ mCut, mCutM, mCut, mCut, mCut, mCut, mCut, mCutM, mCutM, mCutM, mCutM, mCutM,,,,],

[ mBCExM, mBCExM, mBCErrM, mBCErrM, mBCCutM, mBCErrM, mCutM, mBCErrM, mBCErrM, mBCCutM, mBCErrM, mCutM,,,,],

[ mBCErrM, mBCErrM, mBCErrM, mBCErrM, mBCCutM, mBCErrM, mCutM, mBCErrM, mBCErrM, mBCCutM, mBCErrM, mCutM,,,,],

[ mBCCutM, mBCCutM, mBCCutM, mBCCutM, mBCCutM, mBCCutM, mCutM, mBCCutM, mBCCutM, mBCCutM, mBCCutM, mCutM,,,,],

[ mCutExM, mCutExM, mBCErrM, mBCErrM, mBCCutM, mCutExM, mCutM, mBCErrM, mBCErrM, mBCCutM, mBCExM, mCutM,,,,],

[ mCutM, mCutM, mCutM, mCutM, mCutM, mCutM, mCutM, mCutM, mCutM, mCutM, mCutM, mCutM,,,,],

,,,

];

difResolution ← SXTechnology.SetUpResolution[ dCnstr, dResTab];

polyResolution ← SXTechnology.SetUpResolution[ pCnstr, pResTab];

metResolution ← SXTechnology.SetUpResolution[ mCnstr, mResTab];

};

Basic nMosHandle & cdLayerMappings.

nMosHandle ← NEW[SX.TechHandle ← [numSpinifexLayers~3, layerInterestBloat~[(CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2), (CDSimpleRules.MinDist[NMos.pol, NMos.pol]/2), (CDSimpleRules.MinDist[NMos.met, NMos.met]/2), ,,,,]] ];

nMosHandle.illegalLayer[NMos.dif] ← FALSE;

nMosHandle.illegalLayer[NMos.pol] ← FALSE;

nMosHandle.illegalLayer[NMos.met] ← FALSE;

nMosHandle.illegalLayer[NMos.ovg] ← FALSE;

nMosHandle.cdLayerMapping[NMos.dif] ← LIST[ [difSpinifex, (CDSimpleRules.MinDist[NMos.dif, NMos.dif]/2)], [polSpinifex,difToPolExtSep,pCnstr[pExcl]]];

nMosHandle.cdLayerMapping[NMos.pol] ← LIST[ [polSpinifex,(CDSimpleRules.MinDist[NMos.pol, NMos.pol]/2)]];

nMosHandle.cdLayerMapping[NMos.met] ← LIST[ [metSpinifex,(CDSimpleRules.MinDist[NMos.met, NMos.met]/2)]];

Spinifex Layer Identification.

nMosHandle.spinifexLayerNames[difSpinifex].layerId ← $Diffusion;

nMosHandle.spinifexLayerNames[polSpinifex].layerId ← $Poly;

nMosHandle.spinifexLayerNames[metSpinifex].layerId ← $Metal;

Thyme stray capacitance layer names.

nMosHandle.spinifexLayerNames[difSpinifex].thymeName ← "D";

nMosHandle.spinifexLayerNames[polSpinifex].thymeName ← "P";

nMosHandle.spinifexLayerNames[metSpinifex].thymeName ← "M";

Set Constraint Resolutions for each layer into the TechHandle.

nMosHandle.constraintResolutions[difSpinifex] ← difResolution;

nMosHandle.constraintResolutions[polSpinifex] ← polyResolution;

nMosHandle.constraintResolutions[metSpinifex] ← metResolution;

Geometric rule triggers.

spaceRuleTrigger[SX.nodeIndex] ← TRUE;

widthRuleTrigger[SX.spaceIndex] ← TRUE;

Corners are defined by union of dif and gate, but checking only looks at dif

difSpaceTrigger1[SX.nodeIndex] ← TRUE;

difSpaceTrigger1[dCh] ← TRUE;

polWidthTrigger ← ALL[TRUE];

polWidthTrigger[ SX.nodeIndex] ← FALSE;

polWidthTrigger [pDandP] ← FALSE; -- newly added by gbb

polWidthTrigger[pBCErr] ← FALSE; -- added by Bowers

polDifSepTriggerA[ SX.nodeIndex] ← TRUE;

polDifSepTriggerB[ pExcl] ← TRUE;

polDifSepTriggerB[ pExCon] ← TRUE;

Purely local errors are not handled in a natural manner by the corner-based scheme, so for every corner we find in pCnstr[pDPErr] we generate an error if there is anything on any layer nearby, of course there is always something so we get our error.

polOverDifTrigger1[ pDPErr] ← TRUE;

polOverDifTrigger2 ← ALL[TRUE];

bcSpaceTrigger[mBCCut] ← TRUE;

bcMetalCutSpacingTriggerA[mCut] ← TRUE;

bcMetalCutSpacingTriggerB[mBCCut] ← TRUE;

polBuriedSpaceTriggerA[pBCErr] ← TRUE;

polBuriedSpaceTriggerA[pBCExcl] ← TRUE;

polBuriedSpaceTriggerB[SX.nodeIndex] ← TRUE;

polSpaceTrigger[SX.nodeIndex] ← TRUE;

polSpaceTrigger[pBCErr] ← TRUE;

metSpaceTrigger[SX.nodeIndex] ← TRUE;

metSpaceTrigger[mBCExM] ← TRUE;

metSpaceTrigger[mBCErrM] ← TRUE;

metSpaceTrigger[mBCCutM] ← TRUE;

metSpaceTrigger[mCutExM] ← TRUE;

metSpaceTrigger[mCutM] ← TRUE;

metWidthTrigger[SX.spaceIndex] ← TRUE;

metWidthTrigger[mBCEx] ← TRUE;

metWidthTrigger[mBCErr] ← TRUE;

metWidthTrigger[mBCCut] ← TRUE;

metWidthTrigger[mCutEx] ← TRUE;

metWidthTrigger[mCut] ← TRUE;

The geometric rules.

difSpacingRule ← NEW[ GeometricRule ← [extent~CDSimpleRules.MinDist[NMos.dif, NMos.dif], message~"Diffusion spacing", okIfConnected~TRUE, trigger1~difSpaceTrigger1, trigger2~spaceRuleTrigger]];

difWidthRule ← NEW[ GeometricRule ← [extent~CDSimpleRules.MinWidth[NMos.dif], message~"Diffusion width", trigger1~widthRuleTrigger, trigger2~widthRuleTrigger]];

polSpacingRule ← NEW[ GeometricRule ← [extent~CDSimpleRules.MinDist[NMos.pol, NMos.pol], message~"Poly spacing", okIfConnected~TRUE, trigger1~polSpaceTrigger, trigger2~polSpaceTrigger]];

polWidthRule ← NEW[ GeometricRule ← [extent~CDSimpleRules.MinWidth[NMos.pol], message~"Poly width", trigger1~polWidthTrigger, trigger2~polWidthTrigger]];

polDifSepRuleA ← NEW[ GeometricRule ← [extent~CDSimpleRules.MinDist[NMos.pol, NMos.dif], message~"Poly/Diffusion spacing[debug:A]", trigger1~polDifSepTriggerA, trigger2~polDifSepTriggerB]];

polDifSepRuleB ← NEW[ GeometricRule ← [extent~CDSimpleRules.MinDist[NMos.pol, NMos.dif], message~"Poly/Diffusion spacing[debug:B]", trigger1~polDifSepTriggerB, trigger2~polDifSepTriggerA]];

polOverDifRule ← NEW[ GeometricRule ← [extent~polOverDif, message~"Poly over Diffusion", trigger1~polOverDifTrigger1, trigger2~polOverDifTrigger2]];

metSpacingRule ← NEW[ GeometricRule ← [extent~CDSimpleRules.MinDist[NMos.met, NMos.met], message~"Metal spacing", okIfConnected~TRUE, trigger1~metSpaceTrigger, trigger2~metSpaceTrigger]];

metWidthRule ← NEW[ GeometricRule ← [extent~CDSimpleRules.MinWidth[NMos.met], message~"Metal width", trigger1~metWidthTrigger, trigger2~metWidthTrigger]];

bcCutSpacingRule ← NEW[ GeometricRule ← [extent: 2*l, message: "Buried Contact Cut Spacing", okIfConnected: FALSE, trigger1~bcSpaceTrigger, trigger2~bcSpaceTrigger]];

bcMetalCutSpacingRuleA ← NEW[ GeometricRule ← [extent: 3*l/2, message: "Buried Contact Cut/Metal Cut Spacing[debug: A]", okIfConnected: FALSE, trigger1~bcMetalCutSpacingTriggerA, trigger2~bcMetalCutSpacingTriggerB]];

bcMetalCutSpacingRuleB ← NEW[ GeometricRule ← [extent: 3*l/2, message: "Buried Contact Cut/Metal Cut Separation[debug: B]", okIfConnected: FALSE, trigger1~bcMetalCutSpacingTriggerB, trigger2~bcMetalCutSpacingTriggerA]];

polBuriedSpacingRuleA ← NEW[ GeometricRule ← [extent: l/2, message: "Buried Contact Cut/Unrelated Poly Spacing[debug:A]", okIfConnected: TRUE, trigger1~polBuriedSpaceTriggerA, trigger2~polBuriedSpaceTriggerB]];

polBuriedSpacingRuleB ← NEW[ GeometricRule ← [extent: l/2, message: "Buried Contact Cut/Unrelated Poly Spacing[debug:B]", okIfConnected: TRUE, trigger1~polBuriedSpaceTriggerB, trigger2~polBuriedSpaceTriggerA]];

detectOpaqueViolation ← NEW[ GeometricRule ← [ extent~ l, message~ "Opaque cell boundary violated", trigger1~ ALL[TRUE], trigger2~ ALL[TRUE]]];

We set violateIndex = FALSE, ALL else TRUE so that corner checks face inward, which should result in more logically pleasing error reports.

detectOpaqueViolation.trigger1[SX.violateIndex] ← FALSE;

nMosHandle.rules[ difSpinifex] ← LIST[difSpacingRule, difWidthRule, detectOpaqueViolation];

nMosHandle.rules[ polSpinifex] ← LIST[polSpacingRule, polWidthRule, polDifSepRuleA, polDifSepRuleB, polOverDifRule, polBuriedSpacingRuleA, polBuriedSpacingRuleB, detectOpaqueViolation];

nMosHandle.rules[ metSpinifex] ← LIST[metSpacingRule, metWidthRule, bcCutSpacingRule, bcMetalCutSpacingRuleA, bcMetalCutSpacingRuleB, detectOpaqueViolation];

Technology handle is attached to the ChipNDale technology.

SXTechnology.RegisterTechnologyHandle[cdTech~ NMos.nmos, technologyHandle~ nMosHandle];

Technology specific objects.

SXTechnology.RegisterSpinifexObjectProcs[ cdTech~ NMos.nmos, objectType~$NMosTransistor, conv~ConvertNMosTransistor, thyme~ThymeNMosTransistor, rose~RoseNMosTransistor, fini~SXOutputPrivate.UnNameTransType];

SXTechnology.RegisterSpinifexObjectProcs[ cdTech~ NMos.nmos, objectType~$NMosATransistor, conv~ConvertNMosTransistor, thyme~ThymeNMosTransistor, rose~RoseNMosTransistor];

SXTechnology.RegisterSpinifexObjectProcs[ cdTech~ NMos.nmos, objectType~$NMosPullUp, conv~ConvertNMosTransistor, thyme~ThymeNMosTransistor, rose~RoseNMosTransistor];

SXTechnology.RegisterSpinifexObjectProcs[ cdTech~ NMos.nmos, objectType~$NMosContactDifAndPol, conv~ConvertNMosContactDifAndPol];

SXTechnology.RegisterSpinifexObjectProcs[ cdTech~ NMos.nmos, objectType~$NMosContactBut, conv~ConvertNMosButtingContact];

SXTechnology.RegisterSpinifexObjectProcs[ cdTech~ NMos.nmos, objectType~$NMosBurContact, conv~ConvertNMosBuriedContact];

SXTechnology.RegisterSpinifexObjectProcs[ cdTech~ NMos.nmos, objectType~$NMosMmContact, conv~ConvertNMosMmContact];

};

Init[];

TerminalIO.PutRope["nMos technology parameters Loaded\n"];

END.

Edited on March 7, 1985 1:28:12 am PST, by Shand

added interaction region around dCnstr[dCh] constraints, new parameter to SXTechnology.ProcessMosTransistor to handle channel constraint interest bloating. Also changed dCnstr[dCh].withNode so that dCnstr[dCh]+Node => $Conflict.

changes to: ConvertNMosTransistor contains creation of dCnstr[dCh] constraints and call of SXTechnology.ProcessMosTransistor, Init setting of dCnstr[dCh].withNode

Edited on March 7, 1985 4:25:39 pm PST, by Shand

Transistor Output changes: n*W multiplier for McCreight, ZTrans for Bowers.

Edited on March 9, 1985 2:01:08 pm PST, by Beretta & Shand

New Constraint Representation from SX and procedures to set it up.

changes to: ConvertNMosTransistor, ConvertNMosButtingContact, ConvertNMosBuriedContact, Constraint, dCnstr, pCnstr, Init, DIRECTORY

Edited on March 10, 1985 10:25:58 pm PST, by Shand

changes to: RoseNMosTransistor

Edited on March 12, 1985 4:23:50 pm PST, by Shand

Now uses registration mechanisms of SXTechnology.

changes to: DIRECTORY, NMosSpinifex, Init, pCnstr, Init, ConvertNMosContactDifAndPol, ConvertNMosButtingContact, pCnstr, Init, Init

Edited on March 19, 1985 12:44:28 pm PST, by Beretta

Thyme output change: substituted `n' coefficient for Ed McCreight by `N'

changes to: ThymeNMosTransistor

Edited on March 27, 1985 6:37:12 pm PST, by Beretta

Corrected bug in poly constraint resolution table

changes to: Init: pResTab[3,1] ← pDPErr

Edited on April 29, 1985 8:09:08 pm PDT, by Beretta

Fixed bug that flagged a poly width rule violation at the attachments of buried contacts "Polysilicon Surround" and "Diffusion Surround"

changes to: Init added polWidthTrigger [pDandP] ← FALSE;

Edited on May 2, 1985 10:45:08 am PDT, by Beretta

Added a quick hack to the Thyme output to allow John Ousterhout to test Crystal.

changes to: ThymeNMosTransistor: If a transistor has a property $Crystal, then its rope value is placed in the parameter list, preceded by a semicolon.

Edited on May 6, 1985 11:26:55 am PDT, by Beretta

Converted to ChipNDale CD20

Edited on May 20, 1985 2:38:11 pm PDT, by Beretta,

Created new interface SXNMosBasicRules.

Edited on June 18, 1985 4:56:52 pm PDT, by Beretta

Changed transistor types from FooTrans to FooTran, as Thyme expects.

changes to: ThymeNMosTransistor

Last edited by: gbb July 18, 1985 4:47:07 pm PDT

Converted to ChipNDale 2.1.

changes to: ConvTransistor: Adapted by Christian, ConvertContact: Completely rewritten.

gbb August 13, 1985 6:15:20 pm PDT

Added creation of Core data structure.

changes to: DIRECTORY, SXNMos, MakeCoreNMOSTransistor: new; type is not correct because Core does not yet cater for NMos transistors, Init

gbb November 7, 1985 5:07:31 pm PST

Conversions for ChipNDale22

gbb November 24, 1985 4:21:44 pm PST

Removed creation of Core data structure.

changes to: DIRECTORY, SXNMos