CDMEBES ///datools/CDNMos _ %CDMEBES.wDir _ "///mebes/"; _ &tech _ %NMos.nmos; _ %CDProperties.PutTechnologyProp[onto: &tech, prop: $CDMEBESNmPerLambda, val: NEW[CDMEBES.Nm _ 1500]]; _ &maxBloat _ 10000 -- nm -- _ %CDProperties.PutTechnologyProp[onto: &tech, prop: $CDMEBESNmMaxBloat, val: NEW[CDMEBES.Nm _ &maxBloat]]; _ %CDProperties.PutTechnologyProp[&tech, $CDMEBESActiveToScribeCenter, NEW[CDMEBES.Nm _ 10000-&maxBloat]]; _ %CDProperties.PutTechnologyProp[onto: &tech, prop: $CDMEBESMaskSetName, val: NIL]; _ %CDProperties.PutTechnologyProp[onto: &tech, prop: $CDMEBESAddScribe, val: TRUE]; _ %CDProperties.PutTechnologyProp[onto: &tech, prop: $CDMEBESDropInList, val: NIL]; _ %CDProperties.PutTechnologyProp[onto: &tech, prop: $CDMEBESNmDieSizeX, val: NIL]; _ %CDProperties.PutTechnologyProp[onto: &tech, prop: $CDMEBESNmDieSizeY, val: NIL]; _ %CDProperties.PutTechnologyProp[onto: &tech, prop: $CDMEBESNmDieOffsetX, val: NIL]; _ %CDProperties.PutTechnologyProp[onto: &tech, prop: $CDMEBESNmDieOffsetY, val: NIL]; source CDMEBESVTIToolingSpec3.cm _ %CDProperties.PutTechnologyProp[&tech, $CDMEBESToolingSpec, &toolingSpec]; _ &diffusion _ NEW[%CDMEBES.DerivationMaskSpecRec _ [maskId: $Diffusion, cover: LIST[$DeNotch, NEW[CDMEBES.Nm _ 3500 -- diameter of largest space between diffusions that disappears, nm -- ], NEW[%CDMEBES.CDLayerRec _ [source: %NMos.dif, deltaDiameter: 0 ]]]]]; _ &depletion _ NEW[%CDMEBES.DerivationMaskSpecRec _ [maskId: $Depletion, cover: LIST[$DeNotch, NEW[CDMEBES.Nm _ 3500 -- diameter of largest space between depletions that disappears, nm -- ], NEW[%CDMEBES.CDLayerRec _ [source: %NMos.imp, deltaDiameter: 0 ]]]]]; _ &enhancement _ NEW[%CDMEBES.DerivationMaskSpecRec _ [maskId: $Enhancement, cover: LIST[$DeNotch, NEW[CDMEBES.Nm _ 3500 -- diameter of largest space between enhancement regions that disappears, nm -- ], LIST[$Enlarge, NEW[CDMEBES.Nm _ 4000], LIST[$ANDNOT, LIST[$AND, NEW[%CDMEBES.CDLayerRec _ [source: %NMos.dif, deltaDiameter: 0]], NEW[%CDMEBES.CDLayerRec _ [source: %NMos.pol, deltaDiameter: 0]]], LIST[$OR, NEW[%CDMEBES.CDLayerRec _ [source: %NMos.imp, deltaDiameter: 0 ]], NEW[%CDMEBES.CDLayerRec _ [source: %NMos.bur, deltaDiameter: 0 ]]]]]]]]; _ &burried _ NEW[%CDMEBES.DerivationMaskSpecRec _ [maskId: $Burried, cover: NEW[%CDMEBES.CDLayerRec _ [source: %NMos.bur, deltaDiameter: 0]]]]; _ &polysilicon _ NEW[%CDMEBES.DerivationMaskSpecRec _ [maskId: $Polysilicon, cover: NEW[%CDMEBES.CDLayerRec _ [source: %NMos.pol, deltaDiameter: 0]]]]; _ &contact _ NEW[%CDMEBES.DerivationMaskSpecRec _ [maskId: $Contact, cover: NEW[%CDMEBES.CDLayerRec _ [source: %NMos.cut, deltaDiameter: 0]]]]; _ &metal1 _ NEW[%CDMEBES.DerivationMaskSpecRec _ [maskId: $Metal1, cover: LIST[$DeNotch, NEW[CDMEBES.Nm _ 1000 -- diameter of smallest non-metal1 region that disappears, nm -- ], NEW[%CDMEBES.CDLayerRec _ [source: %NMos.met, deltaDiameter: 0]]]]]; _ &via _ NEW[%CDMEBES.DerivationMaskSpecRec _ [maskId: $Via, cover: NEW[%CDMEBES.CDLayerRec _ [source: %NMos.cut2, deltaDiameter: 0]]]]; _ &metal2 _ NEW[%CDMEBES.DerivationMaskSpecRec _ [maskId: $Metal2, cover: NEW[%CDMEBES.CDLayerRec _ [source: %NMos.met2, deltaDiameter: 0]]]]; _ &oxidePad _ NEW[%CDMEBES.DerivationMaskSpecRec _ [maskId: $OxidePad, cover: NEW[%CDMEBES.CDLayerRec _ [source: %NMos.ovg, deltaDiameter: 0 -- nm --]]]]; _ &nitridePad _ NEW[%CDMEBES.DerivationMaskSpecRec _ [maskId: $NitridePad, cover: NEW[%CDMEBES.CDLayerRec _ [source: %NMos.ovg, deltaDiameter: 0 -- nm --]]]]; _ %CDProperties.PutTechnologyProp[onto: &tech, prop: $CDMEBESDerivationSpec, val: LIST[&diffusion, &enhancement, &depletion, &burried, &polysilicon, &contact, &metal1, &via, &metal2, &oxidePad, &nitridePad ]] τCDMEBESNMOS17Sep.load McCreight, June 23, 1986 5:47:07 pm PDT Last Edited by: Ross September 25, 1986 4:59:53 pm PDT 10 um is an upper bound on the greatest distance the "influence" of a drawn object extends beyond itself This causes the radius of the MEBES file to be 10 um larger than the ChipNDale geometry that it contains. This extra makes sure that all of the enlargements and mask biases are accommodated. ask the user for project name don't add a scribe line nMOS mask derivations: ΚΎ˜šœ™Icode™'K™6—J˜Jšœ˜Jšœ˜JšœΟkœ˜J˜Jšœ˜J˜JšœOœœ ˜gšœΟc˜Jšžh™h—JšœNœœ˜kšœGœœ˜jJ™ΏJ™—šœOœ˜TJ™—šœMœ˜SJ™—JšœNœ˜SJšœNœ˜SJšœNœ˜SJšœPœ˜UJšœPœ˜UJ˜Jšœ ˜ JšœL˜LJ˜JšΟb™J™Jšœœœ5œ œœ žFœœœ:˜…Jšœœœ5œ œœ žFœœœ:˜…Jš)œœœ7œ œœ žOœœ œœ œ œœœ6œœ8œœœ7œœ<˜§J˜Jš œ œœ3œœ7˜J˜J˜Jš œœœ7œœ7˜—J˜J˜Jš œ œœ3œœ7˜J˜Jšœ œœ2œ œœ ž@œœœ8˜χJ˜Jš œ œœ/œœ8˜ˆJ˜Jš œ œœ2œœ8˜ŽJ˜Jš œœœ4œœ3žœ˜šJ˜Jš œœœ6œœ3žœ˜žJ˜JšœRœz˜Π—…—„6