MOS.Tioga
Last Edited by: Spreitzer, March 10, 1985 1:12:36 pm PST
Last Edited by: Shand, March 3, 1985 3:29:47 pm PST
MOS-Specific Aspects of Circuits
Context
[Indigo]<Rosemary>Compare0.2>Compare.DF=>Format.Tioga describes a general format for describing circuits. This document describes ways to give information relevant to MOS within that general framework.
Net Assertions
Here follows a list of assertions for nets that concern themselves with MOS properties:
Stray: (MOSStrays (AreaOrPerim Layer Number)*)
AreaOrPerim: a | p
Layer: {M, M2, G, P, nD, pD, ...}
This gives a geometric abstract of the shape of a MOSFET net.
Transistor Cell Type Assertions
Here follows a list of assertions for cell types that concern themselves with transistors:
TransistorResistance: (MOSFETShape length:Number width:Number)
This gives a geometric abstract of the shape of a MOSFET channel. For non-rectangular transistors, this should be the shape of an electrically-equivalent rectangular transistor.
TransistorFlavor: (MOSFETFlavor type:Type mode:Mode)
Type: n | p
Mode: E(nhancement) | D(epletion)
This gives some basic information about a MOSFET.
Transistor Cell Instance Assertions
Here follows a list of assertions for cell instances that concern themselves with transistors: