MOS-Specific Aspects of Circuits Context [Indigo]Compare0.2>Compare.DF=>Format.Tioga describes a general format for describing circuits. This document describes ways to give information relevant to MOS within that general framework. Net Assertions Here follows a list of assertions for nets that concern themselves with MOS properties: Stray: (MOSStrays (AreaOrPerim Layer Number)*) AreaOrPerim: a | p Layer: {M, M2, G, P, nD, pD, ...} This gives a geometric abstract of the shape of a MOSFET net. Transistor Cell Type Assertions Here follows a list of assertions for cell types that concern themselves with transistors: TransistorResistance: (MOSFETShape length:Number width:Number) This gives a geometric abstract of the shape of a MOSFET channel. For non-rectangular transistors, this should be the shape of an electrically-equivalent rectangular transistor. TransistorFlavor: (MOSFETFlavor type:Type mode:Mode) Type: n | p Mode: E(nhancement) | D(epletion) This gives some basic information about a MOSFET. Transistor Cell Instance Assertions Here follows a list of assertions for cell instances that concern themselves with transistors: ~MOS.Tioga Last Edited by: Spreitzer, March 10, 1985 1:12:36 pm PST Last Edited by: Shand, March 3, 1985 3:29:47 pm PST ‌تَ– "cedar" styleکIcode™ J™8J™3Ititleک IheadکIbodyکتMککWKکKڑœدb œ‌œ‌œ‌ک.Kڑœ ‌œ‌کڑ œ‌œ‌œ‌œ‌œ‌œ‌œک!Nک=——MککZKکڑœ‌œ‌ک>Nک²—KکKڑœ‌ œ‌ک4Kڑœ‌œ‌کڑœ‌œ‌œ ک!Nک1——Mک#Nک^—…—†÷