CDCmos run CornerStitchingImpl run EBESMaskImpl _ %EBESMaskImpl.stripesPerClump _ 5 -- package default is 10 _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDxEBESNmPerLambda, val: NEW[INT _ 1000]] _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDxEBESNmPerEBESPixel, val: NEW[INT _ 500]] _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDxEBESXNmPerDie, val: NEW[INT _ 8130000]] _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDxEBESYNmPerDie, val: NEW[INT _ 9145000]] _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDxEBESActiveToScribeCenter, val: NEW[INT _ 105000 -- active area 25 um inside metal 2 scribe ring --]] _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDxEBESNmMaxBloat, val: NEW[INT _ 10000]] _ &thinOxScribe _ NEW[%EBESMaskImpl.ScribeRec _ [dieEdgeToLineCenter: 0, lineWidth: 110000 -- nm --]] _ &thinOx _ NEW[%EBESMaskImpl.MaskSpecRec _ [name: "10", cover: LIST[$OR, NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.ndif, deltaDiameter: 1000 -- nm --]], NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.pdif, deltaDiameter: 1000 -- nm --]], NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.pwelCont, deltaDiameter: 1000 -- nm --]], NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.nwelCont, deltaDiameter: 1000 -- nm --]], &thinOxScribe]]] _ &nWell _ NEW[%EBESMaskImpl.MaskSpecRec _ [name: "21", cover: LIST[$OR, NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.nwel, deltaDiameter: -8000 -- nm --]], &thinOxScribe]]] _ &pWell _ NEW[%EBESMaskImpl.MaskSpecRec _ [name: "22", cover: LIST[$OR, NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.nwel, deltaDiameter: -2000 -- nm --]], &thinOxScribe]]] _ &impScribe _ NEW[%EBESMaskImpl.ScribeRec _ [dieEdgeToLineCenter: 0, lineWidth: 106000 -- nm --]] _ &ndifs _ LIST[$OR, NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.ndif]], NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.nwelCont]]] _ &pdifs _ LIST[$OR, NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.pdif]], NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.pwelCont]]] _ &nImp _ NEW[%EBESMaskImpl.MaskSpecRec _ [name: "23", cover: LIST[$OR, LIST[$RestrictNImplant, NEW[INT _ 1500 -- maxRadialExtension, nm -- ], &ndifs, &pdifs], &impScribe]]] _ &pImp _ NEW[%EBESMaskImpl.MaskSpecRec _ [name: "24", cover: LIST[$OR, LIST[$RestrictNImplant, NEW[INT _ 1500 -- maxRadialExtension, nm -- ], &pdifs, &ndifs], &impScribe]]] _ &poly _ NEW[%EBESMaskImpl.MaskSpecRec _ [name: "30", cover: LIST[$OR, NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.pol, deltaDiameter: 0 -- nm --]], NEW[%EBESMaskImpl.ScribeRec _ [dieEdgeToLineCenter: 54000, lineWidth: 18000 -- nm --]]]]] _ &cut _ NEW[%EBESMaskImpl.MaskSpecRec _ [name: "40", cover: LIST[$OR, NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.cut, deltaDiameter: 0 -- nm --]], &impScribe]]] _ &metal _ NEW[%EBESMaskImpl.MaskSpecRec _ [name: "50", cover: LIST[$OR, NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.met, deltaDiameter: 0 -- nm --]], NEW[%EBESMaskImpl.ScribeRec _ [dieEdgeToLineCenter: 59000, lineWidth: 20000 -- nm --]]]]] _ &glass _ NEW[%EBESMaskImpl.MaskSpecRec _ [name: "60", cover: LIST[$OR, NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.ovg, deltaDiameter: 0 -- nm --]], NEW[%EBESMaskImpl.ScribeRec _ [dieEdgeToLineCenter: 0, lineWidth: 80000 -- nm --]]]]] _ &cut2 _ NEW[%EBESMaskImpl.MaskSpecRec _ [name: "70", cover: LIST[$OR, NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.cut2, deltaDiameter: 0 -- nm --]], NEW[%EBESMaskImpl.ScribeRec _ [dieEdgeToLineCenter: 0, lineWidth: 80000 -- nm --]]]]] _ &metal2 _ NEW[%EBESMaskImpl.MaskSpecRec _ [name: "80", cover: LIST[$OR, NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.met2, deltaDiameter: 0 -- nm --]], NEW[%EBESMaskImpl.ScribeRec _ [dieEdgeToLineCenter: 75000, lineWidth: 10000 -- nm --]]]]] _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDxEBESMaskSetSpec, val: LIST[&thinOx, &nWell, &pWell, &nImp, &pImp, -- &buried, -- &poly, &cut, &metal, &glass, &cut2, &metal2]] _ %CDProperties.PutPropOnAtom[$EBESMask, $CDxEBESMaskSetName, "MPC55AT"] CDxCMOSEBES.load last modified by McCreight, July 9, 1985 6:26:23 pm PDT .. the die size .. CMOS masks: thin oxide or diffusion = 10 nwell = 21 pwell = 22 nimp = 23 pimp = 24 buried = 27 _ &buried _ NEW[%EBESMaskImpl.MaskSpecRec _ [name: "27", cover: LIST[$OR, NEW[%EBESMaskImpl.CDLayerRec _ [source: %CMos.bur, deltaDiameter: 0 -- nm --]], &impScribe]]] poly = 30 cut = 40 metal = 50 glass = 60 cut2 = 70 metal2 = 80 .. the name of the die (until I figure out how to get it into the design) Êc˜Jšœ™Jšœ7™7J˜J˜Jšœ˜J˜J˜Jšœ$Ïc˜