<> <> <> <> DIRECTORY Atom, CMosCMTransistors, CMosObjects, CD, CDBasics, CDIO, CDLRUCache, CDOps, CDStretchyBackdoor, CMos, Rope, TokenIO; CMosCMTransistorsImpl: CEDAR PROGRAM IMPORTS Atom, CD, CDBasics, CDIO, CDLRUCache, CDOps, CDStretchyBackdoor, CMos, CMosObjects, Rope, TokenIO EXPORTS CMosCMTransistors = BEGIN OPEN CMos; lambda: CD.Number = CMos.lambda; undef: CD.Layer = CD.undefLayer; depletionOverlap: CD.Number = (3*lambda)/2; wXExtension: CD.Number = CMosCMTransistors.wXExtension; lXExtension: CD.Number = CMosCMTransistors.lXExtension; wellSurround: CD.Number = CMos.wellSurround; TransistorPtr: TYPE = CMosCMTransistors.TransistorPtr; TransistorRec: TYPE = CMosCMTransistors.TransistorRec; tCache: CDLRUCache.LRUCache = CDLRUCache.Create[size: 15, aequivalenceProc: Aequivalent, newProc: NewTrans]; aCache: CDLRUCache.LRUCache = CDLRUCache.Create[size: 15, aequivalenceProc: Aequivalent, newProc: NewTrans]; Init: PROC [] = { pForTransistors.drawMe _ pForTransistors.quickDrawMe _ DrawMeForTransistors; pForTransistors.internalRead _ ReadTrans; pForTransistors.internalWrite _ WriteTrans; pForTransistors.describe _ Describe; CDStretchyBackdoor.InstallMatchProc[pForTransistors, MatchTrans]; pForPTypeTransistors.drawMe _ pForPTypeTransistors.quickDrawMe _ DrawPTypeTransistors; pForPTypeTransistors.internalRead _ ReadTrans; pForPTypeTransistors.internalWrite _ WriteTrans; pForPTypeTransistors.interestRect _ PTransInterestRect; pForPTypeTransistors.describe _ Describe; CDStretchyBackdoor.InstallMatchProc[pForPTypeTransistors, MatchTrans]; pForATransistors.drawMe _ pForATransistors.quickDrawMe _ DrawMeForATransistors; pForATransistors.internalRead _ ReadATrans; pForATransistors.internalWrite _ WriteATrans; pForATransistors.describe _ Describe; CDStretchyBackdoor.InstallMatchProc[pForATransistors, MatchTrans]; pForPTypeATransistors.drawMe _ pForPTypeATransistors.quickDrawMe _ DrawPTypeATransistors; pForPTypeATransistors.internalRead _ ReadATrans; pForPTypeATransistors.internalWrite _ WriteATrans; pForPTypeATransistors.interestRect _ APTransInterestRect; pForPTypeATransistors.describe _ Describe; CDStretchyBackdoor.InstallMatchProc[pForPTypeATransistors, MatchTrans]; }; Aequivalent: PROC[mySpecific, other: REF ANY] RETURNS [BOOL] = { WITH other SELECT FROM tp2: TransistorPtr => RETURN [NARROW[mySpecific, TransistorPtr]^=tp2^]; ENDCASE => RETURN [FALSE] }; NewTrans: PROC [] RETURNS [CD.Object] = { ob: CD.Object _ NEW[CD.ObjectRep]; ob.specific _ NEW[TransistorRec]; RETURN [ob] }; Describe: PROC[me: CD.Object] RETURNS [Rope.ROPE] = { tp: TransistorPtr = NARROW[me.specific]; RETURN [ Rope.Cat[ (IF tp.angle THEN "angle transistor " ELSE "transistor "), Atom.GetPName[CD.LayerKey[me.layer]], Rope.Cat[ " [", CDOps.LambdaRope[tp.width, 2], CDOps.LambdaRope[tp.length, 2], "]" ] ] ] }; PTransInterestRect: PROC [ob: CD.Object] RETURNS [CD.Rect] = { beyondPolyX: CD.Number = MAX[0, wellSurround-NARROW[ob.specific, TransistorPtr].wExt]; RETURN [CD.Rect[x1: 0, y1: 0, x2: ob.bbox.x2-beyondPolyX, y2: ob.bbox.y2-wellSurround]] }; APTransInterestRect: PROC [ob: CD.Object] RETURNS [CD.Rect] = { beyondPolyX: CD.Number = MAX[0, wellSurround-NARROW[ob.specific, TransistorPtr].wExt]; RETURN [CD.Rect[x1: 0, y1: 0, x2: ob.bbox.x2-wellSurround, y2: ob.bbox.y2-beyondPolyX]] <> }; <<-- Transistor -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- >> pForTransistors: CD.ObjectClass ~ RegisterObjectClass[$CMosTransistor]; pForPTypeTransistors: CD.ObjectClass ~ RegisterObjectClass[$CMosPTypeTransistor]; CreateTransistor: PUBLIC PROC [w, l: CD.Number, wExt: CD.Number_wXExtension, lExt: CD.Number_lXExtension, difLev: CD.Layer_undef] RETURNS [CD.Object] = BEGIN tob: CD.Object _ tCache.UnusedOrNew[]; tp: TransistorPtr _ NARROW[tob.specific]; IF difLev=undef THEN difLev_ndif; tob.class _ pForTransistors; w _ MAX[w, 2*lambda]; l _ MAX[l, 2*lambda]; wExt _ MAX[wExt, 0]; lExt _ MAX[lExt, 0]; tp.width _ w; tp.length _ l; tp.wExt _ wExt; tp.lExt _ lExt; tp.angle _ FALSE; tob.layer _ difLev; IF difLev=pdif THEN { beyondPolyX: CD.Number = MAX[0, wellSurround-tp.wExt]; tob.class _ pForPTypeTransistors; tob.bbox _ [-beyondPolyX, -wellSurround, w+2*wExt+beyondPolyX, l+2*lExt+wellSurround]; } ELSE { tob.bbox _ [0, 0, w+2*wExt, l+2*lExt]; tob.class _ pForTransistors; }; IF wExt=wXExtension AND lExt=lXExtension THEN { IF difLev=CMos.pdif THEN difLev _ CMos.wpdif; RETURN [CMosObjects.CreateTransistor[[w+2*wExt, l+2*lExt], difLev]] }; RETURN [tCache.ReplaceByAequivalent[tob]] END; MatchTrans: PROC [me: CD.Object, r: CD.Rect, layer: CD.Layer, prim: BOOL, horz: BOOL] RETURNS [BOOL] = BEGIN <<-- Don't care about different diffusions and such>> RETURN [layer=CMos.pol OR layer=me.layer] END; ReadTrans: CD.InternalReadProc --PROC [] RETURNS [Object]-- = BEGIN w: INT = TokenIO.ReadInt[h]; l: INT = TokenIO.ReadInt[h]; wExt: INT = TokenIO.ReadInt[h]; lExt: INT = TokenIO.ReadInt[h]; difLev: CD.Layer = CDIO.ReadLayer[h]; RETURN [CreateTransistor[w: w, l: l, wExt: wExt, lExt: lExt, difLev: difLev]]; END; WriteTrans: CD.InternalWriteProc -- PROC [ob: Object] -- = BEGIN tp: TransistorPtr = NARROW[ob.specific]; TokenIO.WriteInt[h, tp.width]; TokenIO.WriteInt[h, tp.length]; TokenIO.WriteInt[h, tp.wExt]; TokenIO.WriteInt[h, tp.lExt]; CDIO.WriteLayer[h, ob.layer]; END; DrawMeForTransistors: PROC [inst: CD.Instance, trans: CD.Transformation, pr: CD.DrawRef] = BEGIN class: TransistorPtr = NARROW[inst.ob.specific]; CDDraw: PROC[r: CD.Rect, l: CD.Layer] = INLINE { <<--uses outer stuff!!>> pr.drawRect[CDBasics.MapRect[r, trans], l, pr] }; CDDraw[[class.wExt, 0, class.wExt+class.width, inst.ob.bbox.y2], inst.ob.layer]; -- ndif or pdiff CDDraw[[0, class.lExt, inst.ob.bbox.x2, class.lExt+class.length], pol]; END; DrawPTypeTransistors: PROC [inst: CD.Instance, trans: CD.Transformation, pr: CD.DrawRef] = BEGIN CDDraw: PROC[r: CD.Rect, l: CD.Layer] = INLINE { --uses outer stuff!! pr.drawRect[CDBasics.MapRect[r, trans], l, pr] }; class: TransistorPtr = NARROW[inst.ob.specific]; beyondWellX: CD.Number = MAX[0, class.wExt-wellSurround]; --object outside well beyondDiffusionX: CD.Number = MAX[class.wExt, wellSurround]; --object outside diffusion beyondPolyX: CD.Number = MAX[0, wellSurround-class.wExt]; --object outside poly <<>> CDDraw[inst.ob.bbox, nwell]; CDDraw[[class.wExt, 0, class.wExt+class.width, inst.ob.bbox.y2-wellSurround], inst.ob.layer]; -- dif or pdiff CDDraw[[0, class.lExt, inst.ob.bbox.x2-beyondPolyX, class.lExt+class.length], pol]; END; <<-- Angle Transistor -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- >> pForATransistors: CD.ObjectClass ~ RegisterObjectClass[$CMosATransistor]; pForPTypeATransistors: CD.ObjectClass ~ RegisterObjectClass[$CMosPTypeATransistor]; CreateAngleTransistor: PUBLIC PROC [w, l: CD.Number, wExt: CD.Number_wXExtension, lExt: CD.Number_lXExtension, aExt: CD.Number_0, difLev: CD.Layer_undef] RETURNS [CD.Object] = BEGIN tob: CD.Object _ aCache.UnusedOrNew[]; tp: TransistorPtr _ NARROW[tob.specific]; IF difLev=undef THEN difLev_ndif; wExt _ MAX[wExt, 0]; lExt _ MAX[lExt, 0]; aExt _ MAX[aExt, -lExt]; w _ MAX[w, 2*lExt]; -- the width of the straight-line <<-- parts of the gate, excluding corner>> l _ MAX[l, 2*lambda]; tp.width _ w; tp.length _ l; tp.wExt _ wExt; tp.lExt _ lExt; tp.angle _ TRUE; tob.layer _ difLev; IF difLev=pdif THEN { beyondPolyX: CD.Number = MAX[0, wellSurround-tp.wExt]; tob.class _ pForPTypeATransistors; tob.bbox _ [-beyondPolyX, -wellSurround, w+l+wExt-aExt+wellSurround, wExt+2*lExt+aExt+l+beyondPolyX]; } ELSE { tob.bbox _ [0, 0, w+l+wExt-aExt, wExt+2*lExt+aExt+l]; tob.class _ pForATransistors; }; RETURN [aCache.ReplaceByAequivalent[tob]] END; ReadATrans: CD.InternalReadProc --PROC [] RETURNS [Object]-- = BEGIN w: INT = TokenIO.ReadInt[h]; l: INT = TokenIO.ReadInt[h]; wExt: INT = TokenIO.ReadInt[h]; lExt: INT = TokenIO.ReadInt[h]; aExt: INT = TokenIO.ReadInt[h]; difLev: CD.Layer = CDIO.ReadLayer[h]; RETURN [ CreateAngleTransistor[w: w, l: l, wExt: wExt, lExt: lExt, aExt: aExt, difLev: difLev] ]; END; AngleExt: PROC[tob: CD.Object] RETURNS [CD.Number] = { tp: TransistorPtr = NARROW[tob.specific]; IF tob.layer=pdif OR tob.layer=nwellCont THEN { beyondPolyX: CD.Number = MAX[0, wellSurround-tp.wExt]; RETURN [tp.width+tp.length+tp.wExt+beyondPolyX+wellSurround-tob.bbox.x2+tob.bbox.x1] }; RETURN [tp.width+tp.length+tp.wExt-tob.bbox.x2] }; WriteATrans: CD.InternalWriteProc -- PROC [ob: Object] -- = BEGIN tp: TransistorPtr = NARROW[ob.specific]; TokenIO.WriteInt[h, tp.width]; TokenIO.WriteInt[h, tp.length]; TokenIO.WriteInt[h, tp.wExt]; TokenIO.WriteInt[h, tp.lExt]; TokenIO.WriteInt[h, AngleExt[ob]]; CDIO.WriteLayer[h, ob.layer]; END; DrawMeForATransistors: PROC [inst: CD.Instance, trans: CD.Transformation, pr: CD.DrawRef] = BEGIN class: TransistorPtr = NARROW[inst.ob.specific]; CDDraw: PROC[r: CD.Rect, l: CD.Layer] = INLINE { --uses outer stuff!! pr.drawRect[CDBasics.MapRect[r, trans], l, pr] }; <<>> <<--The transistor makes a 90-degree bend, going eastward and>> <<--then southward. The diffusion on the outer side of the angle,>> <<--that is, on the northeast side, is arbitrarily called the drain.>> <<>> r: CD.Rect = CDBasics.MapRect[inst.ob.bbox, trans]; IF CDBasics.Intersect[r, pr.interestClip] THEN { ele: CD.Number = 2*class.lExt+class.length; sz: CD.Position _ CDBasics.SizeOfRect[inst.ob.bbox]; hPoly: CD.Rect = [0, class.lExt, sz.x-class.lExt, class.length+class.lExt]; -- horizontal vPoly: CD.Rect = [sz.x-class.length-class.lExt, hPoly.y2, hPoly.x2, sz.y]; -- vertical nDrain: CD.Rect = [class.wExt, 0, sz.x, hPoly.y1]; -- north eDrain: CD.Rect = [vPoly.x2, nDrain.y2, nDrain.x2, sz.y-class.wExt]; -- east wSource: CD.Rect = [sz.x-ele, eDrain.y1, eDrain.x1, sz.y-class.wExt]; -- west sSource: CD.Rect = [MIN[class.wExt, wSource.x1], nDrain.y2, wSource.x1, MIN[ele, wSource.y2]]; -- south IF class.lExt>0 THEN BEGIN CDDraw[nDrain, inst.ob.layer]; CDDraw[eDrain, inst.ob.layer]; END; CDDraw[wSource, inst.ob.layer]; CDDraw[sSource, inst.ob.layer]; CDDraw[hPoly, pol]; CDDraw[vPoly, pol]; } END; DrawPTypeATransistors: PROC [inst: CD.Instance, trans: CD.Transformation, pr: CD.DrawRef] = BEGIN class: TransistorPtr = NARROW[inst.ob.specific]; CDDraw: PROC[r: CD.Rect, l: CD.Layer] = INLINE { <> pr.drawRect[CDBasics.MapRect[r, trans], l, pr] }; <<>> <<--The transistor makes a 90-degree bend, going eastward and>> <<--then southward. The diffusion on the outer side of the angle,>> <<--that is, on the northeast side, is arbitrarily called the drain.>> r: CD.Rect = CDBasics.MapRect[inst.ob.bbox, trans]; IF CDBasics.Intersect[r, pr.interestClip] THEN { sz: CD.Position _ CD.InterestSize[inst.ob]; ele: CD.Number = 2*class.lExt+class.length; hPoly: CD.Rect = [0, class.lExt, sz.x-class.lExt, class.length+class.lExt]; -- horizontal vPoly: CD.Rect = [sz.x-class.length-class.lExt, hPoly.y2, hPoly.x2, sz.y]; -- vertical nDrain: CD.Rect = [class.wExt, 0, sz.x, hPoly.y1]; -- north eDrain: CD.Rect = [vPoly.x2, nDrain.y2, nDrain.x2, sz.y-class.wExt]; -- east wSource: CD.Rect = [sz.x-ele, eDrain.y1, eDrain.x1, sz.y-class.wExt]; -- west sSource: CD.Rect = [MIN[class.wExt, wSource.x1], nDrain.y2, wSource.x1, MIN[ele, wSource.y2]]; -- south IF class.lExt>0 THEN BEGIN CDDraw[nDrain, inst.ob.layer]; CDDraw[eDrain, inst.ob.layer]; END; CDDraw[wSource, inst.ob.layer]; CDDraw[sSource, inst.ob.layer]; CDDraw[hPoly, pol]; CDDraw[vPoly, pol]; CDDraw[inst.ob.bbox, nwell]; } END; Init[]; END.