CDMEBES _ %CDMEBES.stripesPerClump _ 5 -- package default is 10 _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESNmPerLambda, val: NEW[INT _ 1000]] _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESNmPerEBESPixel, val: NEW[INT _ 500]] _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESXNmPerDie, val: NEW[INT _ 8130000]] _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESYNmPerDie, val: NEW[INT _ 9145000]] _ &s _ 10000 -- nm, see VTI design rules, document 02-ECL-2, figure 7.2, page 26/52 _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESActiveToScribeCenter, val: NEW[INT _ &s+14000+45000 -- active area 25 um inside metal 2 scribe ring --]] _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESNmMaxBloat, val: NEW[INT _ 10000]] _ &thinOxScribe _ NEW[%CDMEBES.ScribeRec _ [scribeCenterToOuterEdge: 0, width: &s+14000 -- nm --]] _ &thinOx _ NEW[%CDMEBES.MaskSpecRec _ [name: "10", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec _ [source: %CMos.ndif, deltaDiameter: 1000 -- nm --]], NEW[%CDMEBES.CDLayerRec _ [source: %CMos.pdif, deltaDiameter: 1000 -- nm --]], NEW[%CDMEBES.CDLayerRec _ [source: %CMos.pwellCont, deltaDiameter: 1000 -- nm --]], NEW[%CDMEBES.CDLayerRec _ [source: %CMos.nwellCont, deltaDiameter: 1000 -- nm --]], &thinOxScribe]]] _ &pWell _ NEW[%CDMEBES.MaskSpecRec _ [name: "11", cover: NEW[%CDMEBES.CDLayerRec _ [source: %CMos.nwell, deltaDiameter: -2000 -- nm --]]]] _ &ndifs _ LIST[$OR, NEW[%CDMEBES.CDLayerRec _ [source: %CMos.ndif]], NEW[%CDMEBES.CDLayerRec _ [source: %CMos.nwellCont]]] _ &pdifs _ LIST[$OR, NEW[%CDMEBES.CDLayerRec _ [source: %CMos.pdif]], NEW[%CDMEBES.CDLayerRec _ [source: %CMos.pwellCont]]] _ &nImp _ NEW[%CDMEBES.MaskSpecRec _ [name: "24", cover: LIST[$OR, LIST[$RestrictNImplant, NEW[INT _ 1500 -- maxRadialExtension, nm -- ], &ndifs, &pdifs], NEW[%CDMEBES.ScribeRec _ [scribeCenterToOuterEdge: &s+2000 -- nm --, width: 12000 -- nm --]]]]] _ &pImp _ NEW[%CDMEBES.MaskSpecRec _ [name: "25", cover: LIST[$OR, LIST[$RestrictNImplant, NEW[INT _ 1500 -- maxRadialExtension, nm -- ], &pdifs, &ndifs], &thinOxScribe]]] _ &nWellScribe _ NEW[%CDMEBES.ScribeRec _ [scribeCenterToOuterEdge: 0, width: &s+2000 -- nm --]] _ &nWell _ NEW[%CDMEBES.MaskSpecRec _ [name: "26", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec _ [source: %CMos.nwell, deltaDiameter: -8000 -- nm --]], &nWellScribe]]] _ &poly _ NEW[%CDMEBES.MaskSpecRec _ [name: "40", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec _ [source: %CMos.pol, deltaDiameter: 0 -- nm --]], NEW[%CDMEBES.ScribeRec _ [scribeCenterToOuterEdge: &s+10000 -- nm --, width: 8000 -- nm --]]]]] _ &cut _ NEW[%CDMEBES.MaskSpecRec _ [name: "50", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec _ [source: %CMos.cut, deltaDiameter: 0 -- nm --]], NEW[%CDMEBES.ScribeRec _ [scribeCenterToOuterEdge: 0, width: &s+16000 -- nm --]]]]] _ &cut2 _ NEW[%CDMEBES.MaskSpecRec _ [name: "51", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec _ [source: %CMos.cut2, deltaDiameter: 0 -- nm --]], &vtiNWellScribe]]] _ &metal _ NEW[%CDMEBES.MaskSpecRec _ [name: "60", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec _ [source: %CMos.met, deltaDiameter: 0 -- nm --]], NEW[%CDMEBES.ScribeRec _ [scribeCenterToOuterEdge: &s+6000 -- nm --, width: 14000 -- nm --]]]]] _ &metal2 _ NEW[%CDMEBES.MaskSpecRec _ [name: "61", cover: NEW[%CDMEBES.CDLayerRec _ [source: %CMos.met2, deltaDiameter: 0 -- nm --]]]]] _ &glass _ NEW[%CDMEBES.MaskSpecRec _ [name: "70", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec _ [source: %CMos.ovg, deltaDiameter: 0 -- nm --]], NEW[%CDMEBES.ScribeRec _ [dieEdgeToLineCenter: 0, lineWidth: &s -- nm --]]]]] _ &nitride _ NEW[%CDMEBES.MaskSpecRec _ [name: "71", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec _ [source: %CMos.ovg, deltaDiameter: 0 -- nm --]], NEW[%CDMEBES.ScribeRec _ [dieEdgeToLineCenter: 0, lineWidth: &s-10000 -- nm --]]]]] _ %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESMaskSetSpec, val: LIST[&thinOx, &nWell, &pWell, &nImp, &pImp, &vtiNWell, &vtiPWell, &poly, &cut, &metal, &glass, &cut2, &metal2, &nitride]] _ %CDProperties.PutPropOnAtom[$MEBESMask, $CDMEBESMaskSetName, "MPCxxZZ"] dCDMEBESForMPCxVTI.load last modified by McCreight, September 10, 1985 6:17:26 pm PDT .. the die size .. CMOS masks: .. To allow test structures located in the scribe lines, these chips have VTI scribe structures that are as small as possible. The MEBES job deck will step in the test structure "dice". thin oxide or diffusion = 10 pwell = PField dope = 11 nimp = 24 pimp = 25 nwell = 26 poly = 40 cut = contact = 50 cut2 = via = 51 metal = 60 metal2 = 61 glass = oxide passivation = 70 nitride passivation = 71 .. the name of the die (until I figure out how to get it into the design) Ê†˜Jšœ™Jšœ=™=J˜J˜J˜JšœÏc˜7J˜JšœVÏkœžœ ˜fJ˜JšœYžœžœ˜hJ˜Jšœ™J˜JšœTžœžœ˜gJ˜JšœTžœžœ˜gJ˜Jšœ F˜SJ˜Jšœ_žœžœ2œ˜¬J˜JšœUžœžœ ˜fJ˜J˜šœ™J™ºJ˜Jšœ™J™JšœžœCœ˜bJ™Jšœžœ,žœžœ@œžœ@œžœEœžœEœ˜›J™Jšœ™J™Jšœžœ,žœBœ˜‹J™Jšœ ™ J™Jšœžœžœ.žœ2˜{J˜Jšœžœžœ.žœ2˜{J˜Jšœ žœžœ#žœžœžœžœœžœžœ/œœ˜úJ˜Jšœ ™ J™Jš œ žœ,žœžœžœžœœ%˜«J˜J˜Jšœ ™ J™JšœžœBœ˜`J˜Jš œžœ,žœžœBœ˜¤J™Jšœ ™ J™Jšœ žœžœ#žœžœžœ3œžœžœ0œœ˜íJ˜Jšœ™J™Jš œ žœ,žœžœ<œžœCœ˜àJ˜Jšœ™J™Jš œ žœ,žœžœ=œ˜¡J˜Jšœ ™ J™Jšœžœ,žœžœ<œžœ8œœ˜îJ˜Jšœ™J™Jšœžœ,žœ=œ˜ˆJ˜Jšœ™J™Jš œžœ,žœžœ<œžœ=œ˜ÜJ˜Jšœ™J™Jš œ žœ,žœžœ<œžœCœ˜äJ˜J™—šœVžœu˜ÏJ˜—J™JšœI™IJ˜JšœI˜IJ˜J˜J˜—…—^H