CDMEBESForMPCxVTI.load
last modified by McCreight, September 10, 1985 6:17:26 pm PDT
CDMEBES
← %CDMEBES.stripesPerClump ← 5 -- package default is 10
← %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESNmPerLambda, val: NEW[INT ← 1000]]
← %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESNmPerEBESPixel, val: NEW[INT ← 500]]
.. the die size
← %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESXNmPerDie, val: NEW[INT ← 8130000]]
← %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESYNmPerDie, val: NEW[INT ← 9145000]]
← &s ← 10000 -- nm, see VTI design rules, document 02-ECL-2, figure 7.2, page 26/52
← %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESActiveToScribeCenter, val: NEW[INT ← &s+14000+45000 -- active area 25 um inside metal 2 scribe ring --]]
← %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESNmMaxBloat, val: NEW[INT ← 10000]]
.. CMOS masks:
.. To allow test structures located in the scribe lines, these chips have VTI scribe structures that are as small as possible. The MEBES job deck will step in the test structure "dice".

thin oxide or diffusion = 10
← &thinOxScribe ← NEW[%CDMEBES.ScribeRec ← [scribeCenterToOuterEdge: 0, width: &s+14000 -- nm --]]
← &thinOx ← NEW[%CDMEBES.MaskSpecRec ← [name: "10", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec ← [source: %CMos.ndif, deltaDiameter: 1000 -- nm --]], NEW[%CDMEBES.CDLayerRec ← [source: %CMos.pdif, deltaDiameter: 1000 -- nm --]], NEW[%CDMEBES.CDLayerRec ← [source: %CMos.pwellCont, deltaDiameter: 1000 -- nm --]], NEW[%CDMEBES.CDLayerRec ← [source: %CMos.nwellCont, deltaDiameter: 1000 -- nm --]], &thinOxScribe]]]
pwell = PField dope = 11
← &pWell ← NEW[%CDMEBES.MaskSpecRec ← [name: "11", cover: NEW[%CDMEBES.CDLayerRec ← [source: %CMos.nwell, deltaDiameter: -2000 -- nm --]]]]
nimp = 24
← &ndifs ← LIST[$OR, NEW[%CDMEBES.CDLayerRec ← [source: %CMos.ndif]], NEW[%CDMEBES.CDLayerRec ← [source: %CMos.nwellCont]]]
← &pdifs ← LIST[$OR, NEW[%CDMEBES.CDLayerRec ← [source: %CMos.pdif]], NEW[%CDMEBES.CDLayerRec ← [source: %CMos.pwellCont]]]
← &nImp ← NEW[%CDMEBES.MaskSpecRec ← [name: "24", cover: LIST[$OR, LIST[$RestrictNImplant, NEW[INT ← 1500 -- maxRadialExtension, nm -- ], &ndifs, &pdifs], NEW[%CDMEBES.ScribeRec ← [scribeCenterToOuterEdge: &s+2000 -- nm --, width: 12000 -- nm --]]]]]
pimp = 25
← &pImp ← NEW[%CDMEBES.MaskSpecRec ← [name: "25", cover: LIST[$OR, LIST[$RestrictNImplant, NEW[INT ← 1500 -- maxRadialExtension, nm -- ], &pdifs, &ndifs], &thinOxScribe]]]
nwell = 26
← &nWellScribe ← NEW[%CDMEBES.ScribeRec ← [scribeCenterToOuterEdge: 0, width: &s+2000 -- nm --]]
← &nWell ← NEW[%CDMEBES.MaskSpecRec ← [name: "26", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec ← [source: %CMos.nwell, deltaDiameter: -8000 -- nm --]], &nWellScribe]]]
poly = 40
← &poly ← NEW[%CDMEBES.MaskSpecRec ← [name: "40", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec ← [source: %CMos.pol, deltaDiameter: 0 -- nm --]], NEW[%CDMEBES.ScribeRec ← [scribeCenterToOuterEdge: &s+10000 -- nm --, width: 8000 -- nm --]]]]]
cut = contact = 50
← &cut ← NEW[%CDMEBES.MaskSpecRec ← [name: "50", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec ← [source: %CMos.cut, deltaDiameter: 0 -- nm --]], NEW[%CDMEBES.ScribeRec ← [scribeCenterToOuterEdge: 0, width: &s+16000 -- nm --]]]]]
cut2 = via = 51
← &cut2 ← NEW[%CDMEBES.MaskSpecRec ← [name: "51", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec ← [source: %CMos.cut2, deltaDiameter: 0 -- nm --]], &vtiNWellScribe]]]
metal = 60
← &metal ← NEW[%CDMEBES.MaskSpecRec ← [name: "60", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec ← [source: %CMos.met, deltaDiameter: 0 -- nm --]], NEW[%CDMEBES.ScribeRec ← [scribeCenterToOuterEdge: &s+6000 -- nm --, width: 14000 -- nm --]]]]]
metal2 = 61
← &metal2 ← NEW[%CDMEBES.MaskSpecRec ← [name: "61", cover: NEW[%CDMEBES.CDLayerRec ← [source: %CMos.met2, deltaDiameter: 0 -- nm --]]]]]
glass = oxide passivation = 70
← &glass ← NEW[%CDMEBES.MaskSpecRec ← [name: "70", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec ← [source: %CMos.ovg, deltaDiameter: 0 -- nm --]], NEW[%CDMEBES.ScribeRec ← [dieEdgeToLineCenter: 0, lineWidth: &s -- nm --]]]]]
nitride passivation = 71
← &nitride ← NEW[%CDMEBES.MaskSpecRec ← [name: "71", cover: LIST[$OR, NEW[%CDMEBES.CDLayerRec ← [source: %CMos.ovg, deltaDiameter: 0 -- nm --]], NEW[%CDMEBES.ScribeRec ← [dieEdgeToLineCenter: 0, lineWidth: &s-10000 -- nm --]]]]]
← %CDProperties.PutPropOnTechnology[onto: %CMos.cmos, prop: $CDMEBESMaskSetSpec, val: LIST[&thinOx, &nWell, &pWell, &nImp, &pImp, &vtiNWell, &vtiPWell, &poly, &cut, &metal, &glass, &cut2, &metal2, &nitride]]
.. the name of the die (until I figure out how to get it into the design)
← %CDProperties.PutPropOnAtom[$MEBESMask, $CDMEBESMaskSetName, "MPCxxZZ"]