-- File: [Thyme]<Thyme>Top>ThymeBasics.thy
-- Last edited:
-- Tremain, July 29, 1983 12:33 PM
-- SChen, June 11, 1983  7:03 PM
-- Barth, April 11, 1983  11:51 AM

Diode: circuit[anode, cathode| Imax_ 1A, Io_ 10nA, Temp_ 25]
  asserts[Imax>Io, Io>0, Temp>-100]= {

  diodeModel: model_ dcDiode[anode, cathode|
    Io, 8.61707E-5*(Temp+273.16), \(Imax/Io)];
  junction: current[anode, cathode]_ diodeModel[0]
  };

MosFet: circuit[gate, source, drain, bulk| 
  Lm_ 7.5,      -- mask value of channel Length (micron)
  Wm_ 50,       -- mask value of channel width  (micron)
  As_ 1500,     -- mask value of source area (micron**2)
  Ad_ 1500,     -- mask value of drain area (micron**2)
  Ps_ 160,      -- mask value of source perimeter (micron)
                -- better exclude the edge under the gate
  Pd_ 160,      -- mask value of drain perimeter (micron)
                -- better exclude the edge under the gate
  Vfb_ -6.79025E-2,     -- flat band voltage (v)
  Na_ 1.222319E15,      -- substrate doping Na (cm-3)
  Tox_ 700,             -- effective gate oxide thickness (A)
  Lk1_ -1.35683,        -- coefficient for calculating K1. (micron)
  Wk1_ 0,               -- coefficient for calculating K1. (micron)
  K20_ 1.371516E-2,     -- coefficient for calculating K2. ()
  Lk2_ -4.96626,        -- coefficient for calculating K2. (micron)
  Wk2_ 0,               -- coefficient for calculating K2. (micron)
  Etao_ 2.552937E-3,    -- eta coefficient (), eta=Etao+nEta*Tox/Le
  nEta_ 3.59803,        -- eta coefficient ()
  Un_ 831.342,          -- effective channel mobility (cm2/v/sec)
  Vo_ 14.8133,          -- mobility modulation coefficient (v)
  Lu_ -0.109125,        -- mobility modulation coefficient (micron) 
  Ecrit_ 1.29325,       -- Critical field strength (v/micron)
  Lv_ 9.54961,          -- coefficient for U1 (micron)
  dL_ -0.387413,        -- change in electrical channel Length from mask (micron)
  dLComp_ 0,            -- poly mask (gate length) compensation (micron)
  dW_ 0,                -- change in electrical channel width from mask (micron)
  dWComp_ 1,            -- dif mask (gate width) compensation (micron)
  Xj2_ 0.8,             -- 2 times lateral diffusion, (micron)
  TDegC_ 25,            -- temparature (degree C)
  NoCap_ 0,             -- flag. if # 0, shut off gate capacitance.
  Type_ 1,              -- channel type (1: n channel, -1: p channel)
  Jmax_ 100u,           -- maximum current density allowed to go thru
                        -- bs or bd junctions (A/u2)
  Jo_ 5p,               -- reverse saturation current density of the
                        -- bs or bd junctions (A/u2)
  -- the max forward bias allowed for the source-bulk and drain-bulk
  -- junctions is MAX[2phif, (kT/q)*Ln[Jmax/Jo]]
  Cj_ 3.1E-14,  -- zero-bias substrate junction capacitance (F/micron**2)
  Cjm_ 0,       -- zero-bias perimeter substrate capacitance (F/micron)
  Pb_ 0.866,    -- junction built-in voltage (v)
  M_ 0.1        -- off gate capacitance multiplier
  ]
  asserts[As>0, Ad>0, Ps>0, Pd>0, Tox>0, Un>0, Ecrit>0, Xj2>0,
    Jmax>Jo, Jo>0, Cj>=0, Cjm>=0, M>=0, M<0.4]= {

  Mos0: circuit[| TDegK] asserts[TDegK>200]= {

    Mos1: circuit[| Cox, TDegKBy300, Vt]= {
  
      Mos2: circuit[| Ni, K10, Le, We] 
        asserts[Na>Ni, Le>.5, We>.5]= {
  
        Mos3: circuit[| TwoPhiF, K1, Eta, U0, Cgbo]
          asserts[Pb>TwoPhiF]= {
         
          mosModel: model_ CSIM[gate, source, drain, bulk|
            Vfb,                            -- vfb(V)
            TwoPhiF,                        -- twoPhiF(V) 
            K1,                             -- k1(V^0.5)  
            K20*(1.0 + Lk2/Le + Wk2/We),    -- k2()  
            Eta,                            -- eta() 
            (Un*1E8)*Cox*We/Le,             -- betao(F/Vsec), >0  
            U0,                             -- u0(1/V) 
            1E-7 MAX ((1/Le-1/Lv)/(2*Ecrit)),  -- u1(1/V)
            Cgbo*M,                         -- CgboM(F)
            Cgbo*2.0/3.0,                   -- Cgbo23rds(F)
            Cox*We*Xj2/2.0,                 -- Cov(F)
            Cj*As+Cjm*Ps,                   -- Cbso(F) 
            Cj*Ad+Cjm*Pd,                   -- Cbdo(F)
            Pb,                             -- phiB(V) 
            Jo*As,                          -- Io for source(A) 
            Jo*Ad,                          -- Io for drain(A) 
            Vt,                             -- kT/q(V)
            (TwoPhiF/Vt) MIN \(Jmax/Jo),    -- expMax()
            NoCap,                          -- NoCap()
            Type                            -- nChannel
            ];
  	  
          i:   current[drain, source]  _ mosModel[0];
          cgb: capacitor[gate, bulk]   _ mosModel[1];
          cgs: capacitor[gate, source] _ mosModel[2];
          cgd: capacitor[gate, drain]  _ mosModel[3];
          cbs: capacitor[bulk, source] _ mosModel[4];
          cbd: capacitor[bulk, drain]  _ mosModel[5];
          jbs: current[bulk, source]   _ mosModel[6];
          jbd: current[bulk, drain]    _ mosModel[7]
          };
    	
        mos3: Mos3[|
          TwoPhiF_ 2.0*Vt*\(Na/Ni),        -- (V), 
          K1_ K10*(0.1 MAX (1.0 + Lk1/Le + Wk1/We)), -- (V^0.5)
          Eta_ 1E-7 MAX (Etao + nEta*Tox/10000/Le),  -- ()
          U0_ 1E-8 MAX (1.0/Vo*(1.0 + Lu/Le)),       -- (1/V)
          Cgbo_ Cox*Le*We                  -- (F)
          ]
        };
  	
      mos2: Mos2[|
        Ni_ 1.45E10*TDegKBy300*/TDegKBy300*
            ^(1.12*(1-300/TDegK)/(2.0*Vt)), -- (#/cm3)
        K10_ /(3.20438E-19*Na*11.7*8.854215E-14)*1.0E-8/Cox,
                          -- SqRt[2q*Esi*Na]/Cox (V^0.5)
        Le_ Lm - Xj2+ dL+ dLComp,  -- (micron) 
        We_ Wm + dW + dWComp       -- (micron)
        ] 
      };
        
    mos1: Mos1[|
      Cox_ 3.9*8.854215E-14/Tox, -- (F/cm/A)=(F/micron2)
      TDegKBy300_ TDegK/300.0,   -- T/300 ()
      Vt_ 8.61707E-5*TDegK       -- (ev)
      ]
    };

  mos0: Mos0[| TDegK_ TDegC+273.16]
  };
  
Diffusion: circuit[cathode, anode|
  a_ 0, p_ 0, Cj_ 0, Cjm_ 0, Pb_0.866, TDegC_ 25, Jmax_ 100u, Jo_ 5p]
  asserts[a>=0, p>=0, Cj>=0, Cjm>=0, TDegC>-75, Jmax>Jo, Jo>0]= {

  Dif: circuit[| Vt] asserts[Pb>Vt]= {
    DModel: model_ acDiode[cathode, anode|
      Cj*a+Cjm*p, -- zero-bias capacitance of diode
      Pb,         -- junction built-in voltage (v)
      Vt,         -- kT/q
      Jo*a,       -- Io
      (Pb/Vt) MIN \(Jmax/Jo)
      ];

    C: capacitor[cathode, anode] _ DModel[0]; 
      -- voltage dependent capacitance
    I: current[cathode, anode] _ DModel[1] 
      -- leakage current
    };

  dif: Dif[| Vt_ 8.61707E-5*(TDegC+273.16)]
  };

Pulse: circuit[output| amplitude_ 5V, offset_ 0, period_ 10ns, 
  width_ 5ns, tRise_ 2ns, tFall_ 2ns, tDelay_ 0] 
  asserts[width<period, tRise+tFall<width]= {

  pg: voltage[output, Gnd]_ PulseGen[
    amplitude+offset, offset, period, width, tRise, tFall, tDelay]
  };

RectWave: circuit[output| OnLevel_ 5V, OffLevel_ 0V, period_ 20ns,
  width_ 10ns, tRise_ 2ns, tFall_ 2ns, tDelay_ 0ns]
  asserts[width<period, tRise+tFall<width]= {

  pg: voltage[output, Gnd]_ PulseGen[
    OnLevel, OffLevel, period, width, tRise, tFall, tDelay]
  };

OneShot: circuit[output| OnLevel_ 5V, OffLevel_ 0V, width_ 10ns,
  tRise_ 2ns, tFall_ 2ns, tDelay_ 0ns]
  asserts[tRise+tFall<width]= {

  pg: voltage[output, Gnd]_ OneShotGen[
    OnLevel, OffLevel, width, tRise, tFall, tDelay]
  };

Step: circuit[output| OnLevel_ 5V, OffLevel_ 0V, tRise_ 5ns, 
  tDelay_ 0ns]
  asserts[tRise>0]= {

  pg: voltage[output, Gnd]_ StepGen[
    OnLevel, OffLevel, tRise, tDelay]
  };
(635)\1927b73B81b71B3501b95B