-- File: [Cherry]<Thyme>Spice>NSIL3-NominalCase.thy
-- Last edited:
-- SChen,  14-Feb-84 19:26:07
-- cf. [Summit]DRA1:[CAD]NSIL3NC.DAT;3       19-SEP-1983 14:36

ENH: circuit[gate, source, drain, bulk| l_ 2, w_ 4, sdExtension_ 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L_ l*Lambda,
    W_ w*Lambda,
    Dln_ sdExtension*Lambda,
    TDegC_ Temp,

    Ld_ 0.225u,
    MFW_ 0,
    MFL_ 0,
    Xj_ 0.3u,

    Js_ 6.7E-5,
    Kp_ 6E-5,
    Vto_ 0.4,
    Phi_ 0.681,
    Pb_ 0.81,
    Ucrit_ 8E4,
    Gamma_ 0.5,
    Lambda_ 0.037,
    Uo_ 556,
    Vmax_ 5.2E4,
    Nfs_ 2.5E11,
    Nsub_ 3E16,
    Tox_ 300E-10,

    Cgso_ 2.59E-10,
    Cgdo_ 2.59E-10,
    Cgbo_ 1.07E-10,
    Cj_ 3E-4,
    Mj_ 0.643,
    Cjsw_ 2.86E-10,
    Mjsw_ 0.181,

    Uexp_ 0.18,
    Delta_ 0.5
    ]
  };
  
DEP2: circuit[gate, source, drain, bulk| l_ 4, w_ 2, sdExtension_ 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L_ l*Lambda,
    W_ w*Lambda,
    Dln_ sdExtension*Lambda,
    TDegC_ Temp,

    Ld_ 0.225u,
    MFW_ 0,
    MFL_ 0,
    Xj_ 0.3u,

    Js_ 6.7E-5,
    Kp_ 6E-5,
    Vto_ -0.5,
    Phi_ 0.681,
    Pb_ 0.818,
    Ucrit_ 2.3E4,
    Gamma_ 0.45,
    Lambda_ 0.02,
    Uo_ 556,
    Vmax_ 4.6E4,
    Nfs_ 4.2E12,
    Nsub_ 7E15,
    Tox_ 300E-10,

    Cgso_ 2.59E-10,
    Cgdo_ 2.59E-10,
    Cgbo_ 1.07E-10,
    Cj_ 3E-4,
    Mj_ 0.643,
    Cjsw_ 2.86E-10,
    Mjsw_ 0.181,

    Uexp_ 0.07,
    Delta_ 1.5
    ]
  };
  
DEP12: circuit[gate, source, drain, bulk| l_ 4, w_ 2, sdExtension_ 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L_ l*Lambda,
    W_ w*Lambda,
    Dln_ sdExtension*Lambda,
    TDegC_ Temp,

    Ld_ 0.225u,
    MFW_ 0,
    MFL_ 0,
    Xj_ 0.3u,

    Js_ 6.7E-5,
    Kp_ 5E-5,
    Vto_ -3.6,
    Phi_ 0.681,
    Pb_ 0.818,
    Ucrit_ 1E4,
    Gamma_ 0.45,
    Lambda_ 0.02,
    Uo_ 556,
    Vmax_ 5.2E4,
    Nfs_ 1E13,
    Nsub_ 3E16,
    Tox_ 300E-10,

    Cgso_ 2.59E-10,
    Cgdo_ 2.59E-10,
    Cgbo_ 1.07E-10,
    Cj_ 3E-4,
    Mj_ 0.643,
    Cjsw_ 2.86E-10,
    Mjsw_ 0.181,

    Uexp_ 0.07,
    Delta_ 1.8
    ]
  };
  
DEP1: circuit[gate, source, drain, bulk| l_ 4, w_ 2, sdExtension_ 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L_ l*Lambda,
    W_ w*Lambda,
    Dln_ sdExtension*Lambda,
    TDegC_ Temp,

    Ld_ 0.225u,
    MFW_ 0,
    MFL_ 0,
    Xj_ 0.3u,

    Js_ 6.7E-5,
    Kp_ 5E-5,
    Vto_ -2.1,
    Phi_ 0.681,
    Pb_ 0.818,
    Ucrit_ 1E4,
    Gamma_ 0.45,
    Lambda_ 0.012,
    Uo_ 556,
    Vmax_ 5.2E4,
    Nfs_ 1E13,
    Nsub_ 4.7E16,
    Tox_ 300E-10,

    Cgso_ 2.59E-10,
    Cgdo_ 2.59E-10,
    Cgbo_ 1.07E-10,
    Cj_ 3E-4,
    Mj_ 0.643,
    Cjsw_ 2.57E-10,
    Mjsw_ 0.181,

    Uexp_ 0.04,
    Delta_ 1.7
    ]
  };