-- File: [Cherry]<Thyme>Spice>NSIL3-BestCase.thy
-- Last edited:
-- SChen,  14-Feb-84 19:15:18
-- cf. [Summit]DRA1:[CAD]NSIL3BC.DAT;3       19-SEP-1983 14:35

ENH: circuit[gate, source, drain, bulk| l_ 2, w_ 4, sdExtension_ 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L_ l*Lambda,
    W_ w*Lambda,
    Dln_ sdExtension*Lambda,
    TDegC_ Temp,

    Ld_ 0.25u,
    MFW_ 0.3u,
    MFL_ -0.3u,
    Xj_ 0.33u,

    Js_ 6.7E-5,
    Kp_ 7E-5,
    Vto_ 0.2,
    Phi_ 0.681,
    Pb_ 0.81,
    Ucrit_ 11E4,
    Gamma_ 0.4,
    Lambda_ 0.03,
    Uo_ 556,
    Vmax_ 5.4E4,
    Nfs_ 2E11,
    Nsub_ 3E16,
    Tox_ 280E-10,

    Cgso_ 2.3E-10,
    Cgdo_ 2.3E-10,
    Cgbo_ 0.63E-10,
    Cj_ 2.7E-4,
    Mj_ 0.643,
    Cjsw_ 2.57E-10,
    Mjsw_ 0.181,

    Uexp_ 0.15,
    Delta_ 0.4
    ]
  };
  
DEP2: circuit[gate, source, drain, bulk| l_ 4, w_ 2, sdExtension_ 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L_ l*Lambda,
    W_ w*Lambda,
    Dln_ sdExtension*Lambda,
    TDegC_ Temp,

    Ld_ 0.25u,
    MFW_ 0.3u,
    MFL_ -0.3u,
    Xj_ 0.33u,

    Js_ 6.7E-5,
    Kp_ 7E-5,
    Vto_ -0.7,
    Phi_ 0.681,
    Pb_ 0.818,
    Ucrit_ 2.5E4,
    Gamma_ 0.35,
    Lambda_ 0.01,
    Uo_ 556,
    Vmax_ 4.8E4,
    Nfs_ 3.7E12,
    Nsub_ 7E15,
    Tox_ 280E-10,

    Cgso_ 2.3E-10,
    Cgdo_ 2.3E-10,
    Cgbo_ 0.63E-10,
    Cj_ 2.7E-4,
    Mj_ 0.643,
    Cjsw_ 2.57E-10,
    Mjsw_ 0.181,

    Uexp_ 0.06,
    Delta_ 1.4
    ]
  };
  
DEP12: circuit[gate, source, drain, bulk| l_ 4, w_ 2, sdExtension_ 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L_ l*Lambda,
    W_ w*Lambda,
    Dln_ sdExtension*Lambda,
    TDegC_ Temp,

    Ld_ 0.25u,
    MFW_ 0.3u,
    MFL_ -0.3u,
    Xj_ 0.33u,

    Js_ 6.7E-5,
    Kp_ 6E-5,
    Vto_ -3.8,
    Phi_ 0.681,
    Pb_ 0.818,
    Ucrit_ 1.2E4,
    Gamma_ 0.35,
    Lambda_ 0.01,
    Uo_ 556,
    Vmax_ 6.2E4,
    Nfs_ 5E12,
    Nsub_ 3E16,
    Tox_ 280E-10,

    Cgso_ 2.3E-10,
    Cgdo_ 2.3E-10,
    Cgbo_ 0.63E-10,
    Cj_ 2.7E-4,
    Mj_ 0.643,
    Cjsw_ 2.57E-10,
    Mjsw_ 0.181,

    Uexp_ 0.06,
    Delta_ 1.4
    ]
  };
  
DEP1: circuit[gate, source, drain, bulk| l_ 4, w_ 2, sdExtension_ 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L_ l*Lambda,
    W_ w*Lambda,
    Dln_ sdExtension*Lambda,
    TDegC_ Temp,

    Ld_ 0.25u,
    MFW_ 0.3u,
    MFL_ -0.3u,
    Xj_ 0.33u,

    Js_ 6.7E-5,
    Kp_ 6E-5,
    Vto_ -2.3,
    Phi_ 0.681,
    Pb_ 0.818,
    Ucrit_ 1.2E4,
    Gamma_ 0.35,
    Lambda_ 0.008,
    Uo_ 556,
    Vmax_ 5.8E4,
    Nfs_ 9E12,
    Nsub_ 4.7E16,
    Tox_ 280E-10,

    Cgso_ 2.3E-10,
    Cgdo_ 2.3E-10,
    Cgbo_ 0.63E-10,
    Cj_ 2.7E-4,
    Mj_ 0.643,
    Cjsw_ 2.57E-10,
    Mjsw_ 0.181,

    Uexp_ 0.03,
    Delta_ 1.6
    ]
  };