-- File: [Cherry]<Thyme>Spice>NSIL3-WorstCase.thy
-- Last edited:
-- SChen, 14-Feb-84 19:27:44
-- cf. [Summit]DRA1:[CAD]NSIL3WC.DAT;4 19-SEP-1983 14:37
-- For the parameters values of ENH, see
-- [Cherry]<Thyme>Spice>Top>Level2Mosfet.thy
ENH: circuit[gate, source, drain, bulk| l← 2, w← 4, sdExtension← 15]= {
fet: Mosfet[drain, gate, source, bulk|
L← l*Lambda,
W← w*Lambda,
Dln← sdExtension*Lambda,
TDegC← Temp]
};
DEP2: circuit[gate, source, drain, bulk| l← 4, w← 2, sdExtension← 15]= {
fet: Mosfet[drain, gate, source, bulk|
L← l*Lambda,
W← w*Lambda,
Dln← sdExtension*Lambda,
TDegC← Temp,
Ld← 0.2u,
MFW← -0.3u,
MFL← 0.3u,
Xj← 0.27u,
Js← 6.7E-5,
Kp← 5E-5,
Vto← -0.3,
Phi← 0.681,
Pb← 0.818,
Ucrit← 2.0E4,
Gamma← 0.55,
Lambda← 0.03,
Uo← 556,
Vmax← 4.4E4,
Nfs← 4.7E12,
Nsub← 7E15,
Tox← 320E-10,
Cgso← 2.85E-10,
Cgdo← 2.85E-10,
Cgbo← 1.51E-10,
Cj← 3.3E-4,
Mj← 0.643,
Cjsw← 3.15E-10,
Mjsw← 0.181,
Uexp← 0.08,
Delta← 1.6
]
};
DEP12: circuit[gate, source, drain, bulk| l← 4, w← 2, sdExtension← 15]= {
fet: Mosfet[drain, gate, source, bulk|
L← l*Lambda,
W← w*Lambda,
Dln← sdExtension*Lambda,
TDegC← Temp,
Ld← 0.2u,
MFW← -0.3u,
MFL← 0.3u,
Xj← 0.27u,
Js← 6.7E-5,
Kp← 4E-5,
Vto← -3.4,
Phi← 0.681,
Pb← 0.818,
Ucrit← 0.8E4,
Gamma← 0.55,
Lambda← 0.04,
Uo← 556,
Vmax← 4.2E4,
Nfs← 2E13,
Nsub← 3E16,
Tox← 320E-10,
Cgso← 2.85E-10,
Cgdo← 2.85E-10,
Cgbo← 1.51E-10,
Cj← 3.3E-4,
Mj← 0.643,
Cjsw← 3.15E-10,
Mjsw← 0.181,
Uexp← 0.08,
Delta← 2.2
]
};
DEP1: circuit[gate, source, drain, bulk| l← 4, w← 2, sdExtension← 15]= {
fet: Mosfet[drain, gate, source, bulk|
L← l*Lambda,
W← w*Lambda,
Dln← sdExtension*Lambda,
TDegC← Temp,
Ld← 0.2u,
MFW← -0.3u,
MFL← 0.3u,
Xj← 0.27u,
Js← 6.7E-5,
Kp← 4E-5,
Vto← -1.9,
Phi← 0.681,
Pb← 0.818,
Ucrit← 0.8E4,
Gamma← 0.55,
Lambda← 0.02,
Uo← 556,
Vmax← 5.0E4,
Nfs← 1.2E13,
Nsub← 4.7E16,
Tox← 320E-10,
Cgso← 2.85E-10,
Cgdo← 2.85E-10,
Cgbo← 1.51E-10,
Cj← 3.3E-4,
Mj← 0.643,
Cjsw← 2.57E-10,
Mjsw← 0.181,
Uexp← 0.05,
Delta← 1.8
]
};