-- File: [Cherry]<Thyme>Spice>NSIL3-WorstCase.thy -- Last edited: -- SChen, 14-Feb-84 19:27:44 -- cf. [Summit]DRA1:[CAD]NSIL3WC.DAT;4 19-SEP-1983 14:37 -- For the parameters values of ENH, see -- [Cherry]<Thyme>Spice>Top>Level2Mosfet.thy ENH: circuit[gate, source, drain, bulk| l← 2, w← 4, sdExtension← 15]= { fet: Mosfet[drain, gate, source, bulk| L← l*Lambda, W← w*Lambda, Dln← sdExtension*Lambda, TDegC← Temp] }; DEP2: circuit[gate, source, drain, bulk| l← 4, w← 2, sdExtension← 15]= { fet: Mosfet[drain, gate, source, bulk| L← l*Lambda, W← w*Lambda, Dln← sdExtension*Lambda, TDegC← Temp, Ld← 0.2u, MFW← -0.3u, MFL← 0.3u, Xj← 0.27u, Js← 6.7E-5, Kp← 5E-5, Vto← -0.3, Phi← 0.681, Pb← 0.818, Ucrit← 2.0E4, Gamma← 0.55, Lambda← 0.03, Uo← 556, Vmax← 4.4E4, Nfs← 4.7E12, Nsub← 7E15, Tox← 320E-10, Cgso← 2.85E-10, Cgdo← 2.85E-10, Cgbo← 1.51E-10, Cj← 3.3E-4, Mj← 0.643, Cjsw← 3.15E-10, Mjsw← 0.181, Uexp← 0.08, Delta← 1.6 ] }; DEP12: circuit[gate, source, drain, bulk| l← 4, w← 2, sdExtension← 15]= { fet: Mosfet[drain, gate, source, bulk| L← l*Lambda, W← w*Lambda, Dln← sdExtension*Lambda, TDegC← Temp, Ld← 0.2u, MFW← -0.3u, MFL← 0.3u, Xj← 0.27u, Js← 6.7E-5, Kp← 4E-5, Vto← -3.4, Phi← 0.681, Pb← 0.818, Ucrit← 0.8E4, Gamma← 0.55, Lambda← 0.04, Uo← 556, Vmax← 4.2E4, Nfs← 2E13, Nsub← 3E16, Tox← 320E-10, Cgso← 2.85E-10, Cgdo← 2.85E-10, Cgbo← 1.51E-10, Cj← 3.3E-4, Mj← 0.643, Cjsw← 3.15E-10, Mjsw← 0.181, Uexp← 0.08, Delta← 2.2 ] }; DEP1: circuit[gate, source, drain, bulk| l← 4, w← 2, sdExtension← 15]= { fet: Mosfet[drain, gate, source, bulk| L← l*Lambda, W← w*Lambda, Dln← sdExtension*Lambda, TDegC← Temp, Ld← 0.2u, MFW← -0.3u, MFL← 0.3u, Xj← 0.27u, Js← 6.7E-5, Kp← 4E-5, Vto← -1.9, Phi← 0.681, Pb← 0.818, Ucrit← 0.8E4, Gamma← 0.55, Lambda← 0.02, Uo← 556, Vmax← 5.0E4, Nfs← 1.2E13, Nsub← 4.7E16, Tox← 320E-10, Cgso← 2.85E-10, Cgdo← 2.85E-10, Cgbo← 1.51E-10, Cj← 3.3E-4, Mj← 0.643, Cjsw← 2.57E-10, Mjsw← 0.181, Uexp← 0.05, Delta← 1.8 ] };