-- File: [Cherry]<Thyme>Spice>NSIL3-NominalCase.thy
-- Last edited:
-- SChen,  14-Feb-84 19:26:07
-- cf. [Summit]DRA1:[CAD]NSIL3NC.DAT;3       19-SEP-1983 14:36

ENH: circuit[gate, source, drain, bulk| l← 2, w← 4, sdExtension← 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L← l*Lambda,
    W← w*Lambda,
    Dln← sdExtension*Lambda,
    TDegC← Temp,

    Ld← 0.225u,
    MFW← 0,
    MFL← 0,
    Xj← 0.3u,

    Js← 6.7E-5,
    Kp← 6E-5,
    Vto← 0.4,
    Phi← 0.681,
    Pb← 0.81,
    Ucrit← 8E4,
    Gamma← 0.5,
    Lambda← 0.037,
    Uo← 556,
    Vmax← 5.2E4,
    Nfs← 2.5E11,
    Nsub← 3E16,
    Tox← 300E-10,

    Cgso← 2.59E-10,
    Cgdo← 2.59E-10,
    Cgbo← 1.07E-10,
    Cj← 3E-4,
    Mj← 0.643,
    Cjsw← 2.86E-10,
    Mjsw← 0.181,

    Uexp← 0.18,
    Delta← 0.5
    ]
  };
  
DEP2: circuit[gate, source, drain, bulk| l← 4, w← 2, sdExtension← 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L← l*Lambda,
    W← w*Lambda,
    Dln← sdExtension*Lambda,
    TDegC← Temp,

    Ld← 0.225u,
    MFW← 0,
    MFL← 0,
    Xj← 0.3u,

    Js← 6.7E-5,
    Kp← 6E-5,
    Vto← -0.5,
    Phi← 0.681,
    Pb← 0.818,
    Ucrit← 2.3E4,
    Gamma← 0.45,
    Lambda← 0.02,
    Uo← 556,
    Vmax← 4.6E4,
    Nfs← 4.2E12,
    Nsub← 7E15,
    Tox← 300E-10,

    Cgso← 2.59E-10,
    Cgdo← 2.59E-10,
    Cgbo← 1.07E-10,
    Cj← 3E-4,
    Mj← 0.643,
    Cjsw← 2.86E-10,
    Mjsw← 0.181,

    Uexp← 0.07,
    Delta← 1.5
    ]
  };
  
DEP12: circuit[gate, source, drain, bulk| l← 4, w← 2, sdExtension← 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L← l*Lambda,
    W← w*Lambda,
    Dln← sdExtension*Lambda,
    TDegC← Temp,

    Ld← 0.225u,
    MFW← 0,
    MFL← 0,
    Xj← 0.3u,

    Js← 6.7E-5,
    Kp← 5E-5,
    Vto← -3.6,
    Phi← 0.681,
    Pb← 0.818,
    Ucrit← 1E4,
    Gamma← 0.45,
    Lambda← 0.02,
    Uo← 556,
    Vmax← 5.2E4,
    Nfs← 1E13,
    Nsub← 3E16,
    Tox← 300E-10,

    Cgso← 2.59E-10,
    Cgdo← 2.59E-10,
    Cgbo← 1.07E-10,
    Cj← 3E-4,
    Mj← 0.643,
    Cjsw← 2.86E-10,
    Mjsw← 0.181,

    Uexp← 0.07,
    Delta← 1.8
    ]
  };
  
DEP1: circuit[gate, source, drain, bulk| l← 4, w← 2, sdExtension← 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L← l*Lambda,
    W← w*Lambda,
    Dln← sdExtension*Lambda,
    TDegC← Temp,

    Ld← 0.225u,
    MFW← 0,
    MFL← 0,
    Xj← 0.3u,

    Js← 6.7E-5,
    Kp← 5E-5,
    Vto← -2.1,
    Phi← 0.681,
    Pb← 0.818,
    Ucrit← 1E4,
    Gamma← 0.45,
    Lambda← 0.012,
    Uo← 556,
    Vmax← 5.2E4,
    Nfs← 1E13,
    Nsub← 4.7E16,
    Tox← 300E-10,

    Cgso← 2.59E-10,
    Cgdo← 2.59E-10,
    Cgbo← 1.07E-10,
    Cj← 3E-4,
    Mj← 0.643,
    Cjsw← 2.57E-10,
    Mjsw← 0.181,

    Uexp← 0.04,
    Delta← 1.7
    ]
  };