-- File: [Cherry]<Thyme>Spice>NSIL3-BestCase.thy
-- Last edited:
-- SChen,  14-Feb-84 19:15:18
-- cf. [Summit]DRA1:[CAD]NSIL3BC.DAT;3       19-SEP-1983 14:35

ENH: circuit[gate, source, drain, bulk| l← 2, w← 4, sdExtension← 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L← l*Lambda,
    W← w*Lambda,
    Dln← sdExtension*Lambda,
    TDegC← Temp,

    Ld← 0.25u,
    MFW← 0.3u,
    MFL← -0.3u,
    Xj← 0.33u,

    Js← 6.7E-5,
    Kp← 7E-5,
    Vto← 0.2,
    Phi← 0.681,
    Pb← 0.81,
    Ucrit← 11E4,
    Gamma← 0.4,
    Lambda← 0.03,
    Uo← 556,
    Vmax← 5.4E4,
    Nfs← 2E11,
    Nsub← 3E16,
    Tox← 280E-10,

    Cgso← 2.3E-10,
    Cgdo← 2.3E-10,
    Cgbo← 0.63E-10,
    Cj← 2.7E-4,
    Mj← 0.643,
    Cjsw← 2.57E-10,
    Mjsw← 0.181,

    Uexp← 0.15,
    Delta← 0.4
    ]
  };
  
DEP2: circuit[gate, source, drain, bulk| l← 4, w← 2, sdExtension← 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L← l*Lambda,
    W← w*Lambda,
    Dln← sdExtension*Lambda,
    TDegC← Temp,

    Ld← 0.25u,
    MFW← 0.3u,
    MFL← -0.3u,
    Xj← 0.33u,

    Js← 6.7E-5,
    Kp← 7E-5,
    Vto← -0.7,
    Phi← 0.681,
    Pb← 0.818,
    Ucrit← 2.5E4,
    Gamma← 0.35,
    Lambda← 0.01,
    Uo← 556,
    Vmax← 4.8E4,
    Nfs← 3.7E12,
    Nsub← 7E15,
    Tox← 280E-10,

    Cgso← 2.3E-10,
    Cgdo← 2.3E-10,
    Cgbo← 0.63E-10,
    Cj← 2.7E-4,
    Mj← 0.643,
    Cjsw← 2.57E-10,
    Mjsw← 0.181,

    Uexp← 0.06,
    Delta← 1.4
    ]
  };
  
DEP12: circuit[gate, source, drain, bulk| l← 4, w← 2, sdExtension← 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L← l*Lambda,
    W← w*Lambda,
    Dln← sdExtension*Lambda,
    TDegC← Temp,

    Ld← 0.25u,
    MFW← 0.3u,
    MFL← -0.3u,
    Xj← 0.33u,

    Js← 6.7E-5,
    Kp← 6E-5,
    Vto← -3.8,
    Phi← 0.681,
    Pb← 0.818,
    Ucrit← 1.2E4,
    Gamma← 0.35,
    Lambda← 0.01,
    Uo← 556,
    Vmax← 6.2E4,
    Nfs← 5E12,
    Nsub← 3E16,
    Tox← 280E-10,

    Cgso← 2.3E-10,
    Cgdo← 2.3E-10,
    Cgbo← 0.63E-10,
    Cj← 2.7E-4,
    Mj← 0.643,
    Cjsw← 2.57E-10,
    Mjsw← 0.181,

    Uexp← 0.06,
    Delta← 1.4
    ]
  };
  
DEP1: circuit[gate, source, drain, bulk| l← 4, w← 2, sdExtension← 15]= {

  fet: Mosfet[drain, gate, source, bulk|
    L← l*Lambda,
    W← w*Lambda,
    Dln← sdExtension*Lambda,
    TDegC← Temp,

    Ld← 0.25u,
    MFW← 0.3u,
    MFL← -0.3u,
    Xj← 0.33u,

    Js← 6.7E-5,
    Kp← 6E-5,
    Vto← -2.3,
    Phi← 0.681,
    Pb← 0.818,
    Ucrit← 1.2E4,
    Gamma← 0.35,
    Lambda← 0.008,
    Uo← 556,
    Vmax← 5.8E4,
    Nfs← 9E12,
    Nsub← 4.7E16,
    Tox← 280E-10,

    Cgso← 2.3E-10,
    Cgdo← 2.3E-10,
    Cgbo← 0.63E-10,
    Cj← 2.7E-4,
    Mj← 0.643,
    Cjsw← 2.57E-10,
    Mjsw← 0.181,

    Uexp← 0.03,
    Delta← 1.6
    ]
  };