File [cherry]<Cholla>CompletedLots>MPCONA008Done.mail!1

*start*
00281 00024 US 
From: Dianna
Date: 3 April 1981 12:56 pm PST (Friday)
From: Rick
Date: 24 March 1981 11:24 pm PST (Tuesday)
Subject: 1.1 Starting Material

Manufacturer: Wacker
Lot Number: lot number
Resistivity: wafer resistivity
Quantity Out: 14
Comment: comments

*start*
00459 00024 US 
From: Dianna
Date: 3 April 1981 12:58 pm PST (Friday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 2.1.1 Initial Oxidation

Tube number: 6
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: thickness
Center Wafer Oxide Thickness: thickness
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 14
Comment: Inital thickness 400

*start*
00344 00024 US 
From: Dianna
Date: 3 April 1981 12:59 pm PST (Friday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 3.1.1 Nitride Deposition

Actual Thickness Wafers 1-7: 1025
Refractive Index Wafers 1-7: index
Actual Thickness Wafers 8-14: 1050
Refractive Index 8-14: index
Quantity Out: 14
Comment: comments

*start*
00175 00024 US 
From: Dianna
Date: 7 April 1981 4:28 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.2 Prebake

Comment: comments

*start*
00173 00024 US 
From: Dianna
Date: 7 April 1981 4:28 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.3 Prime

Comment: comments

*start*
00172 00024 US 
From: Dianna
Date: 7 April 1981 4:28 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.4 Spin

Comment: comments

*start*
00177 00024 US 
From: Dianna
Date: 7 April 1981 4:29 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:51 pm PST (Tuesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00207 00024 US 
From: Dianna
Date: 7 April 1981 4:29 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:59 pm PST (Tuesday)
Subject: 7.6 Field Mask Expose

Mask Identifier: DIFF
Comment: comments

*start*
00175 00024 US 
From: Dianna
Date: 7 April 1981 4:29 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.7 Develop

Comment: comments

*start*
00181 00024 US 
From: Dianna
Date: 7 April 1981 4:29 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00302 00024 US 
From: Dianna
Date: 7 April 1981 4:29 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:37 pm PST (Tuesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Dev. Ck. CD Top: 5.5 Center: 5.5  Bottom: 5.8
Wafer Number: 2
Dev. Ck. CD Top: 5.9 Center: 5.7  Bottom: 5.8
Comment: comments

*start*
00180 00024 US 
From: Dianna
Date: 7 April 1981 4:30 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.12 Plasma Etch

Comment: comments

*start*
00179 00024 US 
From: Dianna
Date: 7 April 1981 4:30 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.17 Etch Check

Comment: comments

*start*
00211 00024 US 
From: Dianna
Date: 8 April 1981 3:29 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:41 pm PST (Tuesday)
Subject: 4.1 Field Implant

Quantity Out: 12
Comment: 125 KEV. 5x10 to 12th

*start*
00183 00024 US 
From: Dianna
Date: 8 April 1981 3:35 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.18 Resist Strip

Comment: comments

*start*
00182 00024 US 
From: Dianna
Date: 8 April 1981 3:35 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.21 Final Check

Comment: comments

*start*
00308 00024 US 


From: Dianna
Date: 8 April 1981 3:43 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:37 pm PST (Tuesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Final Ck. CD Top: 4.9 Center: 4.9  Bottom: 5.2
Wafer Number: 2
Final Ck. CD Top: 5.2 Center: 5.1  Bottom: 5.2
Comment: comments

*start*
00205 00024 US 
From: Dianna
Date: 8 April 1981 3:44 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:42 pm PST (Tuesday)
Subject: 7.20 Field Mask Strip


Quantity Out: 12
Comment: comments

*start*
00451 00024 US 
From: Dianna
Date: 13 April 1981 4:27 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:43 pm PST (Tuesday)
Subject: 2.3.1 Field Oxidation

Tube number: 5
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: thickness
Center Wafer Oxide Thickness: thickness
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 12
Comment: Thickness 8724

*start*
00200 00024 US 
From: Dianna
Date: 13 April 1981 4:28 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:43 pm PST (Tuesday)
Subject: 6.1 Back Oxide Etch

Quantity Out: 12
Comment: comments

*start*
00350 00024 US 
From: Dianna
Date: 13 April 1981 4:28 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:44 pm PST (Tuesday)
Subject: 4.2 Deep Imp. - Boron

Comment: All MPC runs are being split at this step. Omit deep implant on even number wafers.
Quantity Out: 12
Comment: Wafers  1-7 received 1.5x10to11th Wafers 8-14 receivedNO IMPLANT.

*start*
00216 00024 US 
From: Dianna
Date: 21 April 1981 2:07 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:44 pm PST (Tuesday)
Subject: 6.2 Nitride Removal Wet

Quantity Out: 11
Comment: One wafer over etched

*start*
00450 00024 US 
From: Dianna
Date: 21 April 1981 2:08 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:45 pm PST (Tuesday)
Subject: 2.4.1 Gate Oxidation

Tube number: 6
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: thickness
Center Wafer Oxide Thickness: thickness
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 11
Comment: Thickness 731

*start*
00176 00024 US 
From: Dianna
Date: 21 April 1981 2:10 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.2 Prebake

Comment: comments

*start*
00174 00024 US 
From: Dianna
Date: 21 April 1981 2:10 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.3 Prime

Comment: comments

*start*
00173 00024 US 
From: Dianna
Date: 21 April 1981 2:10 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.4 Spin

Comment: comments

*start*
00178 00024 US 
From: Dianna
Date: 21 April 1981 2:10 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:51 pm PST (Tuesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00216 00024 US 
From: Dianna
Date: 21 April 1981 2:10 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:00 am PST (Wednesday)
Subject: 7.6 Depletion Mask 1 Expose

Mask Identifier: IMP.
Comment: comments

*start*
00176 00024 US 
From: Dianna
Date: 21 April 1981 2:11 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.7 Develop

Comment: comments

*start*
00182 00024 US 
From: Dianna
Date: 21 April 1981 2:11 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00179 00024 US 
From: Dianna
Date: 21 April 1981 2:11 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.10 Hard Bake

Comment: comments

*start*
00417 00024 US 
From: Dianna
Date: 21 April 1981 2:11 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:58 pm PST (Tuesday)
Subject: 5.1 Dep. Imp. 1 - Phos.

Comment: On wafers that don't have the deep implant, all even numbered wafers (step 4.2)  a dose of 1.5x10↑12 should be used on MPC wafers.
Quantity Out: 11
Comment: Wafers 1-7 received 1.7x10to12th 70 Kev. Wafers 8-14 received 1.5x10to12th 70 Kev.

*start*
00207 00024 US 
From: Dianna
Date: 21 April 1981 2:13 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:58 pm PST (Tuesday)
Subject: 7.20 Dep. Imp. Mask Strip

Quantity Out: 11
Comment: comments

*start*
00237 00024 US 
From: Dianna
Date: 21 April 1981 2:14 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:33 am PST (Wednesday)
Subject: 4.3 Enhancement Imp. Boron

Quantity Out: 11
Comment: Wafers received 2.8x10to11th 45 Kev.


*start*
00325 00024 US 
From: Dianna
Date: 24 April 1981 10:46 am PST (Friday)
From: Rick
Date: 18 March 1981 10:53 am PST (Wednesday)
Subject: 3.2 Poly Deposition

Deposition Number: number
Deposition Time: time
Front Wafer Poly Thickness: thickness
Rear Wafer Poly Thickness: thickness
Quantity Out: wafers out


*start*
00295 00024 US 
From: Dianna
Date: 24 April 1981 10:48 am PST (Friday)
From: Rick
Date: 18 March 1981 10:53 am PST (Wednesday)
Subject: 3.2 Poly Deposition

Deposition Number: 49
Deposition Time: time
Front Wafer Poly Thickness: 3476
Rear Wafer Poly Thickness: 3704
Quantity Out: 11


*start*
00372 00024 US 
From: Dianna
Date: 24 April 1981 10:49 am PST (Friday)
From: Rick
Date: 17 March 1981 4:59 pm PST (Tuesday)
Subject: 2.9.1 Phos. Diffusion

Comment: Use Veeco
Front Wafer resistivity: resistivity
Center Wafer resistivity: resistivity
Back Wafer resistivity: resistivity
Poly Wafer resistivity: Average resistivity was 21.0
Quantity Out: 11

*start*
00178 00024 US 
From: Dianna
Date: 24 April 1981 10:52 am PST (Friday)
From: Rick
Date: 25 March 1981 12:04 am PST (Wednesday)
Subject: 7.2 Prebake

Comment: comments

*start*
00176 00024 US 
From: Dianna
Date: 24 April 1981 10:53 am PST (Friday)
From: Rick
Date: 25 March 1981 12:04 am PST (Wednesday)
Subject: 7.3 Prime

Comment: comments

*start*
00175 00024 US 
From: Dianna
Date: 24 April 1981 10:53 am PST (Friday)
From: Rick
Date: 25 March 1981 12:04 am PST (Wednesday)
Subject: 7.4 Spin

Comment: comments

*start*
00180 00024 US 
From: Dianna
Date: 24 April 1981 10:53 am PST (Friday)
From: Rick
Date: 25 March 1981 12:04 am PST (Wednesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00209 00024 US 
From: Dianna
Date: 24 April 1981 10:53 am PST (Friday)
From: Rick
Date: 25 March 1981 12:05 am PST (Wednesday)
Subject: 7.6 Poly Mask Expose

Mask Identifier: POL.
Comment: comments

*start*
00178 00024 US 
From: Dianna
Date: 24 April 1981 10:54 am PST (Friday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.7 Develop

Comment: comments

*start*
00184 00024 US 
From: Dianna
Date: 24 April 1981 10:54 am PST (Friday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00305 00024 US 
From: Dianna
Date: 24 April 1981 10:54 am PST (Friday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Dev. Ck. CD Top: 5.4 Center: 5.6  Bottom: 5.7
Wafer Number: 2
Dev. Ck. CD Top: 5.3 Center: 5.4  Bottom: 5.7
Comment: comments

*start*
00188 00024 US 
From: Dianna
Date: 24 April 1981 10:55 am PST (Friday)
From: Rick
Date: 25 March 1981 12:08 am PST (Wednesday)
Subject: 7.13 Poly Plasma Etch

Comment: comments

*start*
00182 00024 US 
From: Dianna
Date: 24 April 1981 10:55 am PST (Friday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.17 Etch Check

Comment: comments

*start*
00184 00024 US 
From: Dianna
Date: 24 April 1981 10:55 am PST (Friday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.18 Resist Strip

Comment: comments

*start*
00183 00024 US 
From: Dianna
Date: 24 April 1981 10:55 am PST (Friday)
From: Rick
Date: 25 March 1981 12:10 am PST (Wednesday)
Subject: 7.21 Final Check

Comment: comments

*start*
00301 00024 US 
From: Dianna
Date: 4 May 1981 4:07 pm PDT (Monday)
From: Rick
Date: 24 March 1981 11:37 pm PST (Tuesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Final Ck. CD Top: 3.3 Center: 4.0  Bottom: 4.2
Wafer Number: 2
Final Ck. CD Top: 3.5 Center: 4.2  Bottom: 3.9
Comment: comments

*start*
00198 00024 US 
From: Dianna
Date: 4 May 1981 4:08 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:35 am PST (Wednesday)
Subject: 5.3.1 S/D Implant

Quantity Out: 11
Comment: comments


*start*
00459 00024 US 
From: Dianna
Date: 4 May 1981 4:09 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:35 am PST (Wednesday)
Subject: 2.7.1 N+ Oxidation

Tube number: 7
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: thickness
Center (S/D Imp.) Wafer Oxide Thickness: 925
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 11
Comment: Average thickness 749


*start*
00399 00024 US 
From: Dianna
Date: 4 May 1981 4:10 pm PDT (Monday)
From: nancy
Date: 29 April 1981 8:07 am PDT (Wednesday)
From: Rick
Date: 25 March 1981 12:35 am PST (Wednesday)
Subject: 3.3.1 P Glass

Deposition Number: 88
Deposition Time: 32.0
Front Wafer P Glass Thickness: 6534
Rear Wafer P Glass Thickness: 6158
Phosphorous Concentration: 8.3%
Quantity Out: 11
Comment: comments


*start*
00302 00024 US 
From: Dianna
Date: 4 May 1981 4:10 pm PDT (Monday)
From: nancy
Date: 29 April 1981 8:10 am PDT (Wednesday)
From: Rick
Date: 25 March 1981 12:41 am PST (Wednesday)
Subject: 2.10.1 Reflow

Tube number: 7
Comment: target temperature is 1050C
Quantity Out: 11
Comment: comments


*start*
00175 00024 US 
From: Dianna
Date: 4 May 1981 4:10 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.1 Preclean

Comment: comments

*start*
00174 00024 US 
From: Dianna
Date: 4 May 1981 4:10 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.2 Prebake

Comment: comments

*start*
00172 00024 US 
From: Dianna
Date: 4 May 1981 4:10 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.3 Prime

Comment: comments

*start*
00171 00024 US 
From: Dianna
Date: 4 May 1981 4:11 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.4 Spin

Comment: comments

*start*
00176 00024 US 
From: Dianna
Date: 4 May 1981 4:11 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00207 00024 US 
From: Dianna
Date: 4 May 1981 4:11 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:14 am PST (Wednesday)
Subject: 7.6 Contact Mask Expose

Mask Identifier: Cut
Comment: comments

*start*
00174 00024 US 
From: Dianna
Date: 4 May 1981 4:11 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:14 am PST (Wednesday)
Subject: 7.7 Develop

Comment: comments

*start*
00180 00024 US 
From: Dianna
Date: 4 May 1981 4:11 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00175 00024 US 
From: Dianna
Date: 4 May 1981 4:11 pm PDT (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.10 Hard Bake

Comment: comments

*start*
00179 00024 US 
From: Dianna
Date: 4 May 1981 4:12 pm PDT (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.11 Plasma Descum

Comment: comments

*start*
00174 00024 US 
From: Dianna
Date: 4 May 1981 4:12 pm PDT (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.15 Wet Etch

Comment: comments

*start*
00178 00024 US 
From: Dianna
Date: 4 May 1981 4:12 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.17 Etch Check

Comment: comments

*start*
00180 00024 US 
From: Dianna
Date: 4 May 1981 4:12 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.18 Resist Strip

Comment: comments

*start*
00179 00024 US 
From: Dianna
Date: 4 May 1981 4:12 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:10 am PST (Wednesday)
Subject: 7.21 Final Check

Comment: comments

*start*
00300 00024 US 
From: Dianna
Date: 4 May 1981 4:12 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:37 am PST (Wednesday)
Subject: 2.9.2 Getter

Tube number: 4
Front resistivity: resistivity
Back Wafer resistivity: resistivity
Quanity wafers out: 11
Comment: average resistivity 21.8 

*start*
00390 00024 US 
From: Dianna
Date: 4 May 1981 4:13 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:38 am PST (Wednesday)
Subject: 3.4.1 Al-1%Si Deposition 

Deposition Number: number
Postdeposition Resistivity: resistance
Postdeposition Reflectivity: reflectivity
Actual thickness: thickness
Wafer Uniformity: % deviation
Quantity Out: wafers out
Comment: comments

*start*
00174 00024 US 
From: Dianna
Date: 4 May 1981 4:14 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.2 Prebake

Comment: comments

*start*
00172 00024 US 
From: Dianna
Date: 4 May 1981 4:14 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.3 Prime

Comment: comments

*start*
00171 00024 US 
From: Dianna
Date: 4 May 1981 4:14 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.4 Spin

Comment: comments

*start*
00176 00024 US 
From: Dianna
Date: 4 May 1981 4:14 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00206 00024 US 
From: Dianna
Date: 4 May 1981 4:14 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:21 am PST (Wednesday)
Subject: 7.6 Metal Mask Expose

Mask Identifier: Met.
Comment: comments

*start*
00174 00024 US 
From: Dianna
Date: 4 May 1981 4:14 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:14 am PST (Wednesday)
Subject: 7.7 Develop

Comment: comments

*start*
00180 00024 US 
From: Dianna
Date: 4 May 1981 4:14 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00328 00024 US 
From: Dianna
Date: 4 May 1981 4:14 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Dev. Ck. CD Top: 9.4 Center: 10.0  Bottom: 10.1
Wafer Number: 2
Dev. Ck. CD Top: 9.5 Center: 9.6  Bottom: 10.1
Comment: Each die different so cd's differ.

*start*
00175 00024 US 
From: Dianna
Date: 4 May 1981 4:16 pm PDT (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.10 Hard Bake

Comment: comments

*start*
00179 00024 US 
From: Dianna
Date: 4 May 1981 4:16 pm PDT (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.11 Plasma Descum

Comment: comments

*start*
00174 00024 US 
From: Dianna
Date: 4 May 1981 4:16 pm PDT (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.15 Wet Etch

Comment: comments

*start*
00178 00024 US 
From: Dianna
Date: 4 May 1981 4:16 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.17 Etch Check

Comment: comments

*start*
00180 00024 US 
From: Dianna
Date: 4 May 1981 4:16 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.19 Resist Strip

Comment: comments

*start*
00179 00024 US 
From: Dianna
Date: 4 May 1981 4:16 pm PDT (Monday)
From: Rick
Date: 25 March 1981 12:10 am PST (Wednesday)
Subject: 7.21 Final Check

Comment: comments

*start*
00328 00024 US 
From: Dianna
Date: 4 May 1981 4:16 pm PDT (Monday)
From: Rick
Date: 24 March 1981 11:37 pm PST (Tuesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Final Ck. CD Top: 5.7 Center: 7.2  Bottom: 7.2
Wafer Number: 2
Final Ck. CD Top: 5.6 Center: 5.7  Bottom: 7.2
Comment: All die are different so cd's differ.