File [cherry]<Cholla>CompletedLots>MPCOD007Done.mail!1

*start*
00239 00024 US 
From: Dianna
Date: 20 March 1981 3:37 pm PST (Friday)
From: Rick
Date: 17 March 1981 2:12 pm PST (Tuesday)
Subject: 1.1 Starting Material

Manufacturer: wacker
Lot Number: unknown
Resistivity: 20
Quantity Out: 14

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00372 00024 US 
From: Dianna
Date: 20 March 1981 3:42 pm PST (Friday)
From: Rick
Date: 17 March 1981 4:28 pm PST (Tuesday)
Subject: 2.1.1 Initial Oxidation

Tube number: 6
Thickness Measurement Device: spec
Front Wafer Oxide Thickness: 405
Center Wafer Oxide Thickness: 405
Rear Wafer Oxide Thickness: 405
Maximum Standard Deviation: thickness
Quantity Out: 14

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00375 00024 US 
From: Dianna
Date: 20 March 1981 3:48 pm PST (Friday)
From: Dianna
Date: 20 March 1981 3:45 pm PST (Friday)
From: Rick
Date: 17 March 1981 4:32 pm PST (Tuesday)
Subject: 3.1.1 Nitride Deposition

Actual Thickness Wafers 1-7: 1020
Refractive Index Wafers 1-7: index
Actual Thickness Wafers 8-14: 1020
Refractive Index 8-14: index
Quantity Out: 14

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00439 00024 US 
From: Dianna
Date: 20 March 1981 3:52 pm PST (Friday)
From: Rick
Date: 20 March 1981 2:23 pm PST (Friday)
Subject: 10 Field Mask

Mask: Diff-1
First Wafer Number: 1
Second Wafer Number: 2
First Dev. Ck. CD Top: 5.8 Center: 5.8  Bottom: 5.6
Scnd Dev. Ck. CD Top: 5.9 Center: 5.9  Bottom: 6.0
First Final Ck. CD Top: 4.9 Center: 5.0  Bottom: 4.8
Scnd Final Ck. CD Top: 5.3 Center: 5.3  Bottom: 5.4
Quantity Out:  14

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00176 00024 US 
From: Dianna
Date: 20 March 1981 3:55 pm PST (Friday)
From: Rick
Date: 20 March 1981 2:46 pm PST (Friday)
Subject: 4.1 Field Implant

Quantity Out: 14

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00181 00024 US 
From: Dianna
Date: 20 March 1981 3:56 pm PST (Friday)
From: Rick
Date: 20 March 1981 2:49 pm PST (Friday)
Subject: 7.20 Field Mask Strip


Quantity Out: 14

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00451 00024 US 
From: Cathy
Date: 24 March 1981 3:17 pm PST (Tuesday)
From: Rick
Date: 17 March 1981 4:38 pm PST (Tuesday)
Subject: 2.3.1 Field Oxidation

Tube number: 5
Thickness Measurement Device: ellipsometer or spectrophotometer
comments: field oxide thin, center wafer bad uniformity 10,00078
Front Wafer Oxide Thickness: 8688 66
Center Wafer Oxide Thickness: thickness
Rear Wafer Oxide Thickness: 8827 69
Quantity Out: 14

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00227 00024 US 
From: Dianna
Date: 25 March 1981 4:17 pm PST (Wednesday)
From: Sharon
Date: 11 March 1981 1:39 pm PST (Wednesday)
Subject: 6.1 Back Oxide Etch

Equipment Used:  equipment name/number
Quantity Out: 14

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00546 00024 US 
From: Diana
Date: 26 March 1981 5:37 pm PST (Thursday)
From: Rick
Date: 12 March 1981 3:03 pm PST (Thursday)
From: Rick
Date: 12 March 1981 1:49 pm PST (Thursday)
From: Sharon
Date: 11 March 1981 1:39 pm PST (Wednesday)
Subject: 4.2 Deep Imp. - Boron

Source: Boron
Acceleration: 150kev
wafers 1-7 implanted and wafers 8-14 no implant
Target Dose: 1.5 x 10↑11 cm-2
Actual Dose: 150kev
Equipment Used:  implanter
Quantity Out: 14
Comment: All MPC runs are being split at this step. Omit deep implant on even number wafers.
*start*
00267 00024 US 
From: Dianna
Date: 1 April 1981 4:40 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:24 pm PST (Tuesday)
Subject: 1.1 Starting Material

Manufacturer: Wacker
Lot Number: lot number
Resistivity: 20
Quantity Out: 14
Comment: comments

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00463 00024 US 
From: Dianna
Date: 1 April 1981 4:42 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 2.1.1 Initial Oxidation

Tube number: 6
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: thickness
Center Wafer Oxide Thickness: thickness
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 14
Comment: Thickness Measured 400

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00345 00024 US 
From: Dianna
Date: 1 April 1981 4:43 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 3.1.1 Nitride Deposition

Actual Thickness Wafers 1-7: 955
Refractive Index Wafers 1-7: index
Actual Thickness Wafers 8-14: 1020
Refractive Index 8-14: index
Quantity Out: 14
Comment: comments

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00177 00024 US 
From: Dianna
Date: 1 April 1981 4:44 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.2 Prebake

Comment: comments

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00175 00024 US 
From: Dianna
Date: 1 April 1981 4:45 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.3 Prime

Comment: comments

*start*
00174 00024 US 
From: Dianna
Date: 1 April 1981 4:45 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.4 Spin

Comment: comments

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00179 00024 US 
From: Dianna
Date: 1 April 1981 4:45 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:51 pm PST (Tuesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00211 00024 US 
From: Dianna
Date: 1 April 1981 4:45 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:59 pm PST (Tuesday)
Subject: 7.6 Field Mask Expose

Mask Identifier: Diff 1
Comment: comments

*start*
00177 00024 US 
From: Dianna
Date: 1 April 1981 4:47 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.7 Develop

Comment: comments

*start*
00183 00024 US 
From: Dianna
Date: 1 April 1981 4:47 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00360 00024 US 
From: Dianna
Date: 1 April 1981 5:00 pm PST (Wednesday)
From: Dianna
Date: 1 April 1981 4:47 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:37 pm PST (Tuesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Dev. Ck. CD Top: 5.2 Center: 5.2  Bottom: 5.3
Wafer Number: 2
Dev. Ck. CD Top: 5.2 Center: 5.2  Bottom: 5.2
Comment: comments

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00182 00024 US 
From: Dianna
Date: 1 April 1981 5:09 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.12 Plasma Etch

Comment: comments

*start*
00181 00024 US 
From: Dianna
Date: 1 April 1981 5:09 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.17 Etch Check

Comment: comments

*start*
00183 00024 US 
From: Dianna
Date: 1 April 1981 5:09 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.18 Resist Strip

Comment: comments

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00191 00024 US 
From: Dianna
Date: 7 April 1981 3:35 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.21 Final Check

Comment: Didn't get final c.d.

*start*
00358 00024 US 
From: Dianna
Date: 7 April 1981 3:36 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:37 pm PST (Tuesday)
Subject: 7.9 CD Measure

Wafer Number: number
Final Ck. CD Top: microns Center: microns  Bottom: microns
Wafer Number: number
Final Ck. CD Top: microns Center: microns  Bottom: microns
Comment: No final c.d.s

*start*
00198 00024 US 
From: Dianna
Date: 7 April 1981 3:37 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:41 pm PST (Tuesday)
Subject: 4.1 Field Implant

Quantity Out: 13
Comment: comments

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00203 00024 US 
From: Dianna
Date: 7 April 1981 3:37 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:42 pm PST (Tuesday)
Subject: 7.20 Field Mask Strip


Quantity Out: 13
Comment: comments

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00483 00024 US 
From: Dianna
Date: 7 April 1981 3:38 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:43 pm PST (Tuesday)
Subject: 2.3.1 Field Oxidation

Tube number: 5
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: thickness
Center Wafer Oxide Thickness: thickness
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 13
Comment: Field ox to thin reworked final thickness 9350

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00200 00024 US 
From: Dianna
Date: 7 April 1981 3:39 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:43 pm PST (Tuesday)
Subject: 6.1 Back Oxide Etch

Quantity Out: 13
Comment: comments

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00347 00024 US 
From: Dianna
Date: 8 April 1981 4:04 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:44 pm PST (Tuesday)
Subject: 4.2 Deep Imp. - Boron

Comment: All MPC runs are being split at this step. Omit deep implant on even number wafers.
Quantity Out: 13
Comment: This run recieved Deep Imp. on wafers 1-7   8-14 no Implant.

*start*
00246 00024 US 
From: Dianna
Date: 8 April 1981 4:06 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:44 pm PST (Tuesday)
Subject: 6.2 Nitride Removal Wet

Quantity Out: 13
Comment: This run recieved a plasma nitride removal. 6 min.

*start*
00449 00024 US 
From: Dianna
Date: 13 April 1981 4:16 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:45 pm PST (Tuesday)
Subject: 2.4.1 Gate Oxidation

Tube number: 6
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: thickness
Center Wafer Oxide Thickness: thickness
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 13
Comment: Thickness 733

*start*
00175 00024 US 
From: Dianna
Date: 13 April 1981 4:18 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.2 Prebake

Comment: comments

*start*
00173 00024 US 
From: Dianna
Date: 13 April 1981 4:18 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.3 Prime

Comment: comments

*start*
00172 00024 US 
From: Dianna
Date: 13 April 1981 4:18 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.4 Spin

Comment: comments

*start*
00177 00024 US 
From: Dianna
Date: 13 April 1981 4:18 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:51 pm PST (Tuesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00217 00024 US 
From: Dianna
Date: 13 April 1981 4:18 pm PST (Monday)
From: Rick
Date: 25 March 1981 12:00 am PST (Wednesday)
Subject: 7.6 Depletion Mask 1 Expose

Mask Identifier: IMP. 2
Comment: comments

*start*
00175 00024 US 
From: Dianna
Date: 13 April 1981 4:19 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.7 Develop

Comment: comments

*start*
00181 00024 US 
From: Dianna
Date: 13 April 1981 4:19 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00178 00024 US 
From: Dianna
Date: 13 April 1981 4:19 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.10 Hard Bake

Comment: comments

*start*
00416 00024 US 
From: Dianna
Date: 13 April 1981 4:19 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:58 pm PST (Tuesday)
Subject: 5.1 Dep. Imp. 1 - Phos.

Comment: On wafers that don't have the deep implant, all even numbered wafers (step 4.2)  a dose of 1.5x10↑12 should be used on MPC wafers.
Quantity Out: 12
Comment: Wafers 1-7 received 1.7x10to12th 70 kev. Wafers 8-14 received 1.5x10to12th 70 kev.

*start*
00206 00024 US 
From: Dianna
Date: 13 April 1981 4:22 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:58 pm PST (Tuesday)
Subject: 7.20 Dep. Imp. Mask Strip

Quantity Out: 13
Comment: comments

*start*
00236 00024 US 
From: Dianna
Date: 13 April 1981 4:22 pm PST (Monday)
From: Rick
Date: 25 March 1981 12:33 am PST (Wednesday)
Subject: 4.3 Enhancement Imp. Boron

Quantity Out: 13
Comment: Wafers received 2.8x10to11th 45 kev.


*start*
00300 00024 US 
From: Dianna
Date: 21 April 1981 2:48 pm PST (Tuesday)
From: Rick
Date: 18 March 1981 10:53 am PST (Wednesday)
Subject: 3.2 Poly Deposition

Deposition Number: 46
Deposition Time: 41 min.
Front Wafer Poly Thickness: 3435
Rear Wafer Poly Thickness: 3486
Quantity Out    11


*start*
00336 00024 US 
From: Dianna
Date: 21 April 1981 2:49 pm PST (Tuesday)
From: Rick
Date: 17 March 1981 4:59 pm PST (Tuesday)
Subject: 2.9.1 Phos. Diffusion

Comment: Use Veeco
Front Wafer resistivity: 25
Center Wafer resistivity: resistivity
Back Wafer resistivity: 28
Poly Wafer resistivity: resistivity
Quantity Out: 11

*start*
00178 00024 US 
From: Dianna
Date: 21 April 1981 2:50 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:04 am PST (Wednesday)
Subject: 7.2 Prebake

Comment: comments

*start*
00176 00024 US 
From: Dianna
Date: 21 April 1981 2:50 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:04 am PST (Wednesday)
Subject: 7.3 Prime

Comment: comments

*start*
00175 00024 US 
From: Dianna
Date: 21 April 1981 2:50 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:04 am PST (Wednesday)
Subject: 7.4 Spin

Comment: comments

*start*
00180 00024 US 
From: Dianna
Date: 21 April 1981 2:50 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:04 am PST (Wednesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00210 00024 US 
From: Dianna
Date: 21 April 1981 2:50 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:05 am PST (Wednesday)
Subject: 7.6 Poly Mask Expose

Mask Identifier: POL.5
Comment: comments

*start*
00178 00024 US 
From: Dianna
Date: 21 April 1981 2:51 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.7 Develop

Comment: comments

*start*
00184 00024 US 
From: Dianna
Date: 21 April 1981 2:51 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00305 00024 US 
From: Dianna
Date: 21 April 1981 2:51 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Dev. Ck. CD Top: 5.3 Center: 5.3  Bottom: 5.2
Wafer Number: 2
Dev. Ck. CD Top: 5.3 Center: 5.2  Bottom: 5.1
Comment: comments

*start*
00188 00024 US 
From: Dianna
Date: 21 April 1981 2:52 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:08 am PST (Wednesday)
Subject: 7.13 Poly Plasma Etch

Comment: comments

*start*
00227 00024 US 
From: Dianna
Date: 21 April 1981 2:52 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.17 Etch Check

Comment: Wafer #12 pulled out of run field mask was over etched.

*start*
00184 00024 US 
From: Dianna
Date: 21 April 1981 2:53 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.18 Resist Strip

Comment: comments

*start*
00183 00024 US 
From: Dianna
Date: 21 April 1981 2:53 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:10 am PST (Wednesday)
Subject: 7.21 Final Check

Comment: comments

*start*
00305 00024 US 
From: Dianna
Date: 24 April 1981 11:16 am PST (Friday)
From: Rick
Date: 24 March 1981 11:37 pm PST (Tuesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Final Ck. CD Top: 3.7 Center: 3.8  Bottom: 3.6
Wafer Number: 2
Final Ck. CD Top: 3.2 Center: 3.2  Bottom: 3.4
Comment: comments

*start*
00227 00024 US 
From: Dianna
Date: 24 April 1981 11:17 am PST (Friday)
From: Rick
Date: 25 March 1981 12:35 am PST (Wednesday)
Subject: 5.3.1 S/D Implant

Quantity Out: 10
Comment: Wafwers received 6x10to15th 50 kev.


*start*
00444 00024 US 
From: Dianna
Date: 24 April 1981 11:18 am PST (Friday)
From: Rick
Date: 25 March 1981 12:35 am PST (Wednesday)
Subject: 2.7.1 N+ Oxidation

Tube number: 7
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: 745
Center (S/D Imp.) Wafer Oxide Thickness: 908
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 10
Comment: comments


*start*
00359 00024 US 
From: Dianna
Date: 24 April 1981 11:19 am PST (Friday)
From: Rick
Date: 25 March 1981 12:35 am PST (Wednesday)
Subject: 3.3.1 P Glass

Deposition Number: 86
Deposition Time: time
Front Wafer P Glass Thickness: 6011
Rear Wafer P Glass Thickness: 5919
Phosphorous Concentration: mole percent
Quantity Out: 10
Comment: comments


*start*
00250 00024 US 
From: Dianna
Date: 24 April 1981 11:21 am PST (Friday)
From: Rick
Date: 25 March 1981 12:41 am PST (Wednesday)
Subject: 2.10.1 Reflow

Tube number: 7
Comment: target temperature is 1050C
Quantity Out: 10
Comment: comments