*start*
00267 00024 US 
From: Dianna
Date: 6 April 1981 5:32 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:24 pm PST (Tuesday)
Subject: 1.1 Starting Material

Manufacturer: Wacker
Lot Number: lot number
Resistivity: 17-23
Quantity Out: 12
Comment: comments

*start*
00458 00024 US 
From: Dianna
Date: 6 April 1981 5:33 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 2.1.1 Initial Oxidation

Tube number: 6
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: thickness
Center Wafer Oxide Thickness: thickness
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 12
Comment: Inital Thickness 409

*start*
00343 00024 US 
From: Dianna
Date: 6 April 1981 5:34 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 3.1.1 Nitride Deposition

Actual Thickness Wafers 1-7: 1060
Refractive Index Wafers 1-7: index
Actual Thickness Wafers 8-14: 1040
Refractive Index 8-14: index
Quantity Out: 12
Comment: comments

*start*
00175 00024 US 
From: Dianna
Date: 7 April 1981 4:25 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.2 Prebake

Comment: comments

*start*
00173 00024 US 
From: Dianna
Date: 7 April 1981 4:25 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.3 Prime

Comment: comments

*start*
00172 00024 US 
From: Dianna
Date: 7 April 1981 4:25 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.4 Spin

Comment: comments

*start*
00177 00024 US 
From: Dianna
Date: 7 April 1981 4:25 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:51 pm PST (Tuesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00211 00024 US 
From: Dianna
Date: 7 April 1981 4:25 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:59 pm PST (Tuesday)
Subject: 7.6 Field Mask Expose

Mask Identifier: DIFF 111
Comment: comments

*start*
00175 00024 US 
From: Dianna
Date: 7 April 1981 4:26 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.7 Develop

Comment: comments

*start*
00181 00024 US 
From: Dianna
Date: 7 April 1981 4:26 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00302 00024 US 
From: Dianna
Date: 7 April 1981 4:26 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:37 pm PST (Tuesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Dev. Ck. CD Top: 5.0 Center: 5.1  Bottom: 5.3
Wafer Number: 2
Dev. Ck. CD Top: 5.0 Center: 5.2  Bottom: 5.3
Comment: comments

*start*
00221 00024 US 
From: Dianna
Date: 7 April 1981 4:27 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.12 Plasma Etch

Comment: Dionex mess up some wafers are a little overetched.

*start*
00179 00024 US 
From: Dianna
Date: 7 April 1981 4:27 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.17 Etch Check

Comment: comments

*start*
00209 00024 US 
From: Dianna
Date: 8 April 1981 3:55 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:41 pm PST (Tuesday)
Subject: 4.1 Field Implant

Quantity Out: 12
Comment: 125kev. 5x10 to12th

*start*
00183 00024 US 
From: Dianna
Date: 8 April 1981 3:56 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.18 Resist Strip

Comment: comments

*start*
00182 00024 US 
From: Dianna
Date: 8 April 1981 3:56 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.21 Final Check

Comment: comments

*start*
00306 00024 US 
From: Dianna
Date: 8 April 1981 3:56 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:37 pm PST (Tuesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Final Ck. CD Top: 4.3 Center: 4.2  Bottom: 4.6
Wafer Number: 2
Final Ck. CD Top: 4.3 Center: 4.3  Bottom: 4.6
Comment: comments

*start*
00205 00024 US 
From: Dianna
Date: 8 April 1981 3:57 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:42 pm PST (Tuesday)
Subject: 7.20 Field Mask Strip


Quantity Out: 12
Comment: comments

*start*
00451 00024 US 
From: Dianna
Date: 13 April 1981 4:30 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:43 pm PST (Tuesday)
Subject: 2.3.1 Field Oxidation

Tube number: 5
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: thickness
Center Wafer Oxide Thickness: thickness
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 12
Comment: Thickness 9181

*start*
00200 00024 US 
From: Dianna
Date: 13 April 1981 4:30 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:43 pm PST (Tuesday)
Subject: 6.1 Back Oxide Etch

Quantity Out: 12
Comment: comments

*start*
00349 00024 US 
From: Dianna
Date: 13 April 1981 4:31 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:44 pm PST (Tuesday)
Subject: 4.2 Deep Imp. - Boron

Comment: All MPC runs are being split at this step. Omit deep implant on even number wafers.
Quantity Out: 12
Comment: Wafers 1-7 received 1.5x10to11th Wafers 8-14 received NO IMPLANT