File [cherry]<Cholla>CompletedLots>MPC13A010Done.mail!1

*start*
00267 00024 US 
From: Dianna
Date: 1 April 1981 5:11 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:24 pm PST (Tuesday)
Subject: 1.1 Starting Material

Manufacturer: Wacker
Lot Number: lot number
Resistivity: 20
Quantity Out: 14
Comment: comments

*start*
00463 00024 US 
From: Dianna
Date: 1 April 1981 5:12 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 2.1.1 Initial Oxidation

Tube number: 6
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: thickness
Center Wafer Oxide Thickness: thickness
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 14
Comment: Thickness measured 400

*start*
00344 00024 US 
From: Dianna
Date: 1 April 1981 5:13 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 3.1.1 Nitride Deposition

Actual Thickness Wafers 1-7: 910
Refractive Index Wafers 1-7: index
Actual Thickness Wafers 8-14: 930
Refractive Index 8-14: index
Quantity Out: 14
Comment: comments

*start*
00177 00024 US 
From: Dianna
Date: 1 April 1981 5:14 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.2 Prebake

Comment: comments

*start*
00175 00024 US 
From: Dianna
Date: 1 April 1981 5:14 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.3 Prime

Comment: comments

*start*
00174 00024 US 
From: Dianna
Date: 1 April 1981 5:14 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.4 Spin

Comment: comments

*start*
00179 00024 US 
From: Dianna
Date: 1 April 1981 5:14 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:51 pm PST (Tuesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00213 00024 US 
From: Dianna
Date: 1 April 1981 5:14 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:59 pm PST (Tuesday)
Subject: 7.6 Field Mask Expose

Mask Identifier: Diff 111
Comment: comments

*start*
00177 00024 US 
From: Dianna
Date: 1 April 1981 5:14 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.7 Develop

Comment: comments

*start*
00183 00024 US 
From: Dianna
Date: 1 April 1981 5:14 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00304 00024 US 
From: Dianna
Date: 1 April 1981 5:14 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:37 pm PST (Tuesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Dev. Ck. CD Top: 4.8 Center: 4.8  Bottom: 5.0
Wafer Number: 2
Dev. Ck. CD Top: 5.5 Center: 5.4  Bottom: 5.5
Comment: comments

*start*
00182 00024 US 
From: Dianna
Date: 1 April 1981 5:15 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.12 Plasma Etch

Comment: comments

*start*
00179 00024 US 
From: Dianna
Date: 7 April 1981 3:43 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.17 Etch Check

Comment: comments

*start*
00198 00024 US 
From: Dianna
Date: 7 April 1981 3:43 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:41 pm PST (Tuesday)
Subject: 4.1 Field Implant

Quantity Out: 13
Comment: comments

*start*
00181 00024 US 
From: Dianna
Date: 7 April 1981 3:44 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.18 Resist Strip

Comment: comments

*start*
00198 00024 US 
From: Dianna
Date: 7 April 1981 3:44 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:35 pm PST (Tuesday)
Subject: 7.21 Final Check

Comment: No final check measurements.

*start*
00378 00024 US 
From: Dianna
Date: 7 April 1981 3:44 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:37 pm PST (Tuesday)
Subject: 7.9 CD Measure

Wafer Number: number
Final Ck. CD Top: microns Center: microns  Bottom: microns
Wafer Number: number
Final Ck. CD Top: microns Center: microns  Bottom: microns
Comment: No final check measurements taken.

*start*
00203 00024 US 
From: Dianna
Date: 7 April 1981 3:45 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:42 pm PST (Tuesday)
Subject: 7.20 Field Mask Strip


Quantity Out: 13
Comment: comments

*start*
00478 00024 US 
From: Dianna
Date: 7 April 1981 3:45 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:43 pm PST (Tuesday)
Subject: 2.3.1 Field Oxidation

Tube number: #5
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: thickness
Center Wafer Oxide Thickness: thickness
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 13
Comment: Field ox to thin reworked thickness 9350

*start*
00200 00024 US 
From: Dianna
Date: 7 April 1981 3:46 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:43 pm PST (Tuesday)
Subject: 6.1 Back Oxide Etch

Quantity Out: 12
Comment: comments

*start*
00346 00024 US 
From: Dianna
Date: 8 April 1981 4:09 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:44 pm PST (Tuesday)
Subject: 4.2 Deep Imp. - Boron

Comment: All MPC runs are being split at this step. Omit deep implant on even number wafers.
Quantity Out: 12
Comment: This run recieved Deep Imp. on wafers 1-7  8-14 no Implant.

*start*
00246 00024 US 
From: Dianna
Date: 8 April 1981 4:10 pm PST (Wednesday)
From: Rick
Date: 24 March 1981 11:44 pm PST (Tuesday)
Subject: 6.2 Nitride Removal Wet

Quantity Out: 12
Comment: This run recieved a Plasma nitride removal. 6 min.

*start*
00449 00024 US 
From: Dianna
Date: 13 April 1981 4:07 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:45 pm PST (Tuesday)
Subject: 2.4.1 Gate Oxidation

Tube number: 6
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: thickness
Center Wafer Oxide Thickness: thickness
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 12
Comment: Thickness 733

*start*
00175 00024 US 
From: Dianna
Date: 13 April 1981 4:08 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.2 Prebake

Comment: comments

*start*
00173 00024 US 
From: Dianna
Date: 13 April 1981 4:08 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.3 Prime

Comment: comments

*start*
00172 00024 US 
From: Dianna
Date: 13 April 1981 4:08 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.4 Spin

Comment: comments

*start*
00177 00024 US 
From: Dianna
Date: 13 April 1981 4:09 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:51 pm PST (Tuesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00219 00024 US 
From: Dianna
Date: 13 April 1981 4:09 pm PST (Monday)
From: Rick
Date: 25 March 1981 12:00 am PST (Wednesday)
Subject: 7.6 Depletion Mask 1 Expose

Mask Identifier: IMP. 112
Comment: comments

*start*
00175 00024 US 
From: Dianna
Date: 13 April 1981 4:10 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.7 Develop

Comment: comments

*start*
00181 00024 US 
From: Dianna
Date: 13 April 1981 4:10 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00178 00024 US 
From: Dianna
Date: 13 April 1981 4:10 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.10 Hard Bake

Comment: comments

*start*
00420 00024 US 
From: Dianna
Date: 13 April 1981 4:10 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:58 pm PST (Tuesday)
Subject: 5.1 Dep. Imp. 1 - Phos.

Comment: On wafers that don't have the deep implant, all even numbered wafers (step 4.2)  a dose of 1.5x10↑12 should be used on MPC wafers.
Quantity Out: 12
Comment: Wafers 1-7 recieved 1.7x10 to12th 70 kev.  Wafers 8-14 recieved 1.5x10 to 12th 70 kev.

*start*
00216 00024 US 
From: Dianna
Date: 13 April 1981 4:13 pm PST (Monday)
From: Rick
Date: 24 March 1981 11:58 pm PST (Tuesday)
Subject: 7.20 Dep. Imp. Mask Strip

Quantity Out: wafers out
Comment: comments

*start*
00239 00024 US 
From: Dianna
Date: 13 April 1981 4:13 pm PST (Monday)
From: Rick
Date: 25 March 1981 12:33 am PST (Wednesday)
Subject: 4.3 Enhancement Imp. Boron

Quantity Out: 12
Comment: Wafers recieved 2.8x10 to 11th  45 kev.


*start*
00298 00024 US 
From: Dianna
Date: 21 April 1981 2:24 pm PST (Tuesday)
From: Rick
Date: 18 March 1981 10:53 am PST (Wednesday)
Subject: 3.2 Poly Deposition

Deposition Number: 46
Deposition Time: 41 min.
Front Wafer Poly Thickness: 3435
Rear Wafer Poly Thickness: 3536
Quantity Out: 13


*start*
00348 00024 US 
From: Dianna
Date: 21 April 1981 2:27 pm PST (Tuesday)
From: Rick
Date: 17 March 1981 4:59 pm PST (Tuesday)
Subject: 2.9.1 Phos. Diffusion

Comment: Use Veeco
Front Wafer resistivity: resistivity
Center Wafer resistivity: resistivity
Back Wafer resistivity: 22.3
Poly Wafer resistivity: resistivity
Quantity Out: 13

*start*
00178 00024 US 
From: Dianna
Date: 21 April 1981 2:29 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:04 am PST (Wednesday)
Subject: 7.2 Prebake

Comment: comments

*start*
00176 00024 US 
From: Dianna
Date: 21 April 1981 2:29 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:04 am PST (Wednesday)
Subject: 7.3 Prime

Comment: comments

*start*
00175 00024 US 
From: Dianna
Date: 21 April 1981 2:29 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:04 am PST (Wednesday)
Subject: 7.4 Spin

Comment: comments

*start*
00180 00024 US 
From: Dianna
Date: 21 April 1981 2:30 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:04 am PST (Wednesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00211 00024 US 
From: Dianna
Date: 21 April 1981 2:30 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:05 am PST (Wednesday)
Subject: 7.6 Poly Mask Expose

Mask Identifier: POL114
Comment: comments

*start*
00178 00024 US 
From: Dianna
Date: 21 April 1981 2:30 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.7 Develop

Comment: comments

*start*
00184 00024 US 
From: Dianna
Date: 21 April 1981 2:30 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00305 00024 US 
From: Dianna
Date: 21 April 1981 2:30 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Dev. Ck. CD Top: 5.7 Center: 5.7  Bottom: 5.9
Wafer Number: 2
Dev. Ck. CD Top: 5.6 Center: 6.2  Bottom: 5.8
Comment: comments

*start*
00188 00024 US 
From: Dianna
Date: 21 April 1981 2:31 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:08 am PST (Wednesday)
Subject: 7.13 Poly Plasma Etch

Comment: comments

*start*
00182 00024 US 
From: Dianna
Date: 21 April 1981 2:31 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.17 Etch Check

Comment: comments

*start*
00184 00024 US 
From: Dianna
Date: 21 April 1981 2:32 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.18 Resist Strip

Comment: comments

*start*
00183 00024 US 
From: Dianna
Date: 21 April 1981 2:32 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:10 am PST (Wednesday)
Subject: 7.21 Final Check

Comment: comments

*start*
00375 00024 US 
From: Dianna
Date: 21 April 1981 2:33 pm PST (Tuesday)
From: Rick
Date: 24 March 1981 11:37 pm PST (Tuesday)
Subject: 7.9 CD Measure

Wafer Number: number
Final Ck. CD Top: microns Center: microns  Bottom: microns
Wafer Number: number
Final Ck. CD Top: microns Center: microns  Bottom: microns
Comment: Could't measure VICKERS DOWN.!

*start*
00226 00024 US 
From: Dianna
Date: 21 April 1981 2:36 pm PST (Tuesday)
From: Rick
Date: 25 March 1981 12:35 am PST (Wednesday)
Subject: 5.3.1 S/D Implant

Quantity Out: 12
Comment: Wafers received 6x10to15th 50 Kev.


*start*
00444 00024 US 
From: Dianna
Date: 24 April 1981 11:22 am PST (Friday)
From: Rick
Date: 25 March 1981 12:35 am PST (Wednesday)
Subject: 2.7.1 N+ Oxidation

Tube number: 7
Thickness Measurement Device: ellipsometer or spectrophotometer
Front Wafer Oxide Thickness: 756
Center (S/D Imp.) Wafer Oxide Thickness: 919
Rear Wafer Oxide Thickness: thickness
Maximum Standard Deviation: thickness
Quantity Out: 12
Comment: comments


*start*
00390 00024 US 
From: Dianna
Date: 24 April 1981 11:23 am PST (Friday)
From: Rick
Date: 25 March 1981 12:35 am PST (Wednesday)
Subject: 3.3.1 P Glass

Deposition Number: 86
Deposition Time: time
Front Wafer P Glass Thickness: thickness
Rear Wafer P Glass Thickness: thickness
Phosphorous Concentration: Average thickness was 6082  LTO.
Quantity Out: 12
Comment: comments


*start*
00250 00024 US 
From: Dianna
Date: 24 April 1981 11:24 am PST (Friday)
From: Rick
Date: 25 March 1981 12:41 am PST (Wednesday)
Subject: 2.10.1 Reflow

Tube number: 7
Comment: target temperature is 1050C
Quantity Out: 12
Comment: comments


*start*
00179 00024 US 
From: Dianna
Date: 24 April 1981 11:25 am PST (Friday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.1 Preclean

Comment: comments

*start*
00178 00024 US 
From: Dianna
Date: 24 April 1981 11:25 am PST (Friday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.2 Prebake

Comment: comments

*start*
00176 00024 US 
From: Dianna
Date: 24 April 1981 11:25 am PST (Friday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.3 Prime

Comment: comments

*start*
00181 00024 US 
From: Dianna
Date: 24 April 1981 11:25 am PST (Friday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.4 Spin

Comment: Spun at 5000 rpm

*start*
00180 00024 US 
From: Dianna
Date: 24 April 1981 11:26 am PST (Friday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00215 00024 US 
From: Dianna
Date: 24 April 1981 11:26 am PST (Friday)
From: Rick
Date: 25 March 1981 12:14 am PST (Wednesday)
Subject: 7.6 Contact Mask Expose

Mask Identifier: cut 115
Comment: comments

*start*
00178 00024 US 
From: Dianna
Date: 24 April 1981 11:27 am PST (Friday)
From: Rick
Date: 25 March 1981 12:14 am PST (Wednesday)
Subject: 7.7 Develop

Comment: comments

*start*
00184 00024 US 
From: Dianna
Date: 24 April 1981 11:27 am PST (Friday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00179 00024 US 
From: Dianna
Date: 24 April 1981 11:27 am PST (Friday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.10 Hard Bake

Comment: comments

*start*
00234 00024 US 
From: Dianna
Date: 24 April 1981 11:27 am PST (Friday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.11 Plasma Descum

Comment: this step not done because contact size so large at this time

*start*
00227 00024 US 
From: Dianna
Date: 24 April 1981 11:29 am PST (Friday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.15 Wet Etch

Comment: etch time was 115 sec. + 30 sec. in 6:1 buffered oxide etch

*start*
00182 00024 US 
From: Dianna
Date: 24 April 1981 11:30 am PST (Friday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.17 Etch Check

Comment: comments

*start*
00184 00024 US 
From: Dianna
Date: 24 April 1981 11:31 am PST (Friday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.18 Resist Strip

Comment: comments

*start*
00183 00024 US 
From: Dianna
Date: 24 April 1981 11:31 am PST (Friday)
From: Rick
Date: 25 March 1981 12:10 am PST (Wednesday)
Subject: 7.21 Final Check

Comment: comments

*start*
00335 00024 US 
From: Dianna
Date: 24 April 1981 11:33 am PST (Friday)
From: Dianna
Date: 24 April 1981 11:31 am PST (Friday)
From: Rick
Date: 25 March 1981 12:37 am PST (Wednesday)
Subject: 2.9.2 Getter

Tube number: 4
Front resistivity: resistivity
Back Wafer resistivity: 22.0
Quanity wafers out: 12
Comment: comments

*start*
00278 00024 US 
From: Dianna
Date: 24 April 1981 11:49 am PST (Friday)
From: Rick
Date: 25 March 1981 12:37 am PST (Wednesday)
Subject: 2.9.2 Getter

Tube number: 4
Front resistivity: resistivity
Back Wafer resistivity: 22
Quanity wafers out: 12
Comment: comments

*start*
00391 00024 US 
From: Dianna
Date: 24 April 1981 11:50 am PST (Friday)
From: Rick
Date: 25 March 1981 12:38 am PST (Wednesday)
Subject: 3.4.1 Al-1%Si Deposition 

Deposition Number: 77
Postdeposition Resistivity: resistance
Postdeposition Reflectivity: reflectivity
Actual thickness: 10,200
Wafer Uniformity: 1,2,8,9 have non-uniform metal
Quantity Out: 12
Comment: comments

*start*
00178 00024 US 
From: Dianna
Date: 24 April 1981 11:53 am PST (Friday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.2 Prebake

Comment: comments

*start*
00176 00024 US 
From: Dianna
Date: 24 April 1981 11:53 am PST (Friday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.3 Prime

Comment: comments

*start*
00175 00024 US 
From: Dianna
Date: 24 April 1981 11:53 am PST (Friday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.4 Spin

Comment: comments

*start*
00180 00024 US 
From: Dianna
Date: 24 April 1981 11:53 am PST (Friday)
From: Rick
Date: 25 March 1981 12:13 am PST (Wednesday)
Subject: 7.5 Soft Bake

Comment: comments

*start*
00213 00024 US 
From: Dianna
Date: 24 April 1981 11:54 am PST (Friday)
From: Rick
Date: 25 March 1981 12:21 am PST (Wednesday)
Subject: 7.6 Metal Mask Expose

Mask Identifier: met 116
Comment: comments

*start*
00178 00024 US 
From: Dianna
Date: 24 April 1981 11:54 am PST (Friday)
From: Rick
Date: 25 March 1981 12:14 am PST (Wednesday)
Subject: 7.7 Develop

Comment: comments

*start*
00184 00024 US 
From: Dianna
Date: 24 April 1981 11:55 am PST (Friday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.8 Develop Check

Comment: comments

*start*
00397 00024 US 
From: Dianna
Date: 24 April 1981 11:55 am PST (Friday)
From: Rick
Date: 25 March 1981 12:06 am PST (Wednesday)
Subject: 7.9 CD Measure

Wafer Number: number
Dev. Ck. CD Top: microns Center: microns  Bottom: microns
Wafer Number: number
Dev. Ck. CD Top: microns Center: microns  Bottom: microns
Comment: dev. ck. c.d. location n/a Need to measure in array.

*start*
00179 00024 US 
From: Dianna
Date: 24 April 1981 11:56 am PST (Friday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.10 Hard Bake

Comment: comments

*start*
00182 00024 US 
From: Dianna
Date: 24 April 1981 11:57 am PST (Friday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.11 Plasma Descum

Comment: No descum

*start*
00178 00024 US 
From: Dianna
Date: 24 April 1981 11:57 am PST (Friday)
From: Rick
Date: 24 March 1981 11:25 pm PST (Tuesday)
Subject: 7.15 Wet Etch

Comment: comments

*start*
00182 00024 US 
From: Dianna
Date: 24 April 1981 11:57 am PST (Friday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.17 Etch Check

Comment: comments

*start*
00184 00024 US 
From: Dianna
Date: 24 April 1981 11:57 am PST (Friday)
From: Rick
Date: 25 March 1981 12:09 am PST (Wednesday)
Subject: 7.19 Resist Strip

Comment: comments

*start*
00183 00024 US 
From: Dianna
Date: 24 April 1981 11:58 am PST (Friday)
From: Rick
Date: 25 March 1981 12:10 am PST (Wednesday)
Subject: 7.21 Final Check

Comment: comments

*start*
00305 00024 US 
From: Dianna
Date: 24 April 1981 11:58 am PST (Friday)
From: Rick
Date: 24 March 1981 11:37 pm PST (Tuesday)
Subject: 7.9 CD Measure

Wafer Number: 1
Final Ck. CD Top: 4.5 Center: 4.5  Bottom: 4.5
Wafer Number: 2
Final Ck. CD Top: 4.5 Center: 4.6  Bottom: 4.4
Comment: comments

*start*
00222 00024 US 
From: Dianna
Date: 24 April 1981 11:58 am PST (Friday)
From: Rick
Date: 25 March 1981 12:39 am PST (Wednesday)
Subject: 2.8.1 Sinter 

Tube number: 7
Quantity Out: wafers out
Comment: comments

*start*
00212 00024 US 
From: Dianna
Date: 24 April 1981 12:02 pm PST (Friday)
From: Rick
Date: 25 March 1981 12:39 am PST (Wednesday)
Subject: 2.8.1 Sinter 

Tube number: 7
Quantity Out: 12
Comment: comments

*start*
00413 00024 US 
From: Dianna
Date: 12 May 1981 10:16 am PDT (Tuesday)
From: Rick
Date: 25 March 1981 12:39 am PST (Wednesday)
Subject: 3.5.1 Passivation Dep 

Deposition Number: number
Deposition Time: time
Front Wafer Passivation Thickness: thickness
Rear Wafer Passivation Thickness: thickness
Phosphorous Concentration: mole percent
Quantity Out: wafers out
Comment: Run has gone to test!!