! POLYCIDE OXIDATION   (850C  DRY-WET OXIDATION)
! Target: 150  30 on single crystal and 900A on As implanted silicon
! Filed : TaSi2Ox.R

Tube: 8

Recipe:

 00:05:00 D	Push		800C          Ar @ 5.0 l/m   Push @ 14"/min
 00:20:00 D	RampUp	850C	        Ar @ 5.0 l/m   
 00:05:00 D	Soak		850C	        Ar @ 5.0 l/m  
 00:20:00 D	Dry		850C	        O2 @ 5.0 l/m 
 00:04:00 D	Wet		850C   	O2 @ 5.0 l/m + H2 @10.0 l/m 
 00:30:00 D	Anneal	850C	        Ar @ 5.0 l/m 
 00:25:00 D	RampDown	800C		Ar @ 5.0 l/m 
 00:05:00 D	Cool		800C		Ar @ 5.0 l/m 
 00:10:00 D	Pull		800C		Ar @ 9.0 l/m   Pull @ 7"/min