! N+ OXIDATION   (1000C  DRY OXIDATION)
! Target: 650  30 on single crystal and 960A on As implanted silicon
! Filed : N+OX.R

Tube: 7

Recipe:

 00:10:00 D	Push		800C  Ar @ 9.0 l/m + O2 @ 0.2 l/m Push @ 7"/min
 00:20:00 D	RampUp	1000C	Ar @ 5.0 l/m + O2 @ 0.2 l/m 
 00:05:00 D	Soak		1000C	Ar @ 5.0 l/m + O2 @ 0.2 l/m
 01:30:00 D	Dry		1000C	O2 @ 5.0 l/m 
 00:30:00 D	Anneal	1000C	Ar @ 5.0 l/m 
 00:25:00 D	RampDown	800C		Ar @ 5.0 l/m 
 00:05:00 D	Cool		800C		Ar @ 5.0 l/m 
 00:20:00 D	Pull		800C		Ar @ 9.0 l/m   Pull @ 5"/min