ETran: circuit[gate, source, drain | L _ 2, W _ 4, sourceExtension _ 1, drainExtension _ 1]= { fet: MosFet[gate, source, drain, Gnd | Lm _ L*Lambda, Wm _ W*Lambda, As _ sourceExtension*W*Lambda*Lambda, Ad _ drainExtension*W*Lambda*Lambda, Ps _ (2*sourceExtension+W)*Lambda, Pd _ (2*drainExtension+W)*Lambda, Vfb _ 7.422857E-2, Na _ 8.849108E+14, Tox _ 700, Lk1 _ -1.03900, Wk1 _ 0.491115, K20 _ -1.485950E-2, Lk2 _ 0.390783, Wk2 _ 5.79960, Etao _ -1.017793E-2, nEta _ 3.49828, Un _ 570.859, Vo _ 20.5669, Lu _ 0.765670, Ecrit _ 1.85011, Lv _ 8.44424, dL _ 0.487116, dW _ -2.42256, TDegC _ Temp, Cj _ 8.90E-17, Cjm _ 2.25E-16, Pb _ 0.87 ] }; -- ETran DTran: circuit[gate, source, drain | L _ 4, W _ 2, sourceExtension _ 1, drainExtension _ 1]= { fet: MosFet[gate, source, drain, Gnd | Lm _ L*Lambda, Wm _ W*Lambda, As _ sourceExtension*W*Lambda*Lambda, Ad _ drainExtension*W*Lambda*Lambda, Ps _ (2*sourceExtension+W)*Lambda, Pd _ (2*drainExtension+W)*Lambda, Vfb _ -4.23788, Na _ 9.721774E+14, Tox _ 700, Lk1 _ -1.21598, Wk1 _ 2.89924, K20 _ -1.090938E-02, Lk2 _ 9.20827, Wk2 _ -0.935040, Etao _ 2.529529E-02, nEta _ 3.90803, Un _ 636.284, Vo _ 35.1750, Lu _ -0.154980, Ecrit _ 1.21462, Lv _ 21.3101, dL _ 0.550266, dW _ -2.41600, TDegC _ Temp, Cj _ 8.90E-17, Cjm _ 2.25E-16, Pb _ 0.87 ] }; -- DTran WireCap: circuit[n | -- l=length, w=width, a=area, p=perimeter l2M _ 0, w2M _ 3, a2M _ 0, p2M _ 0, -- 2nd layer metal lM _ 0, wM _ 3, aM _ 0, pM _ 0, -- 1rst layer metal lP _ 0, wP _ 2, aP _ 0, pP _ 0, -- poly a2MC _ 1.3E-5pF, p2MC _ 0, -- /(uM)^2, /uM, 2nd layer metal to bulk aMC _ 2.6E-5pF, pMC _ 0, -- 1rst layer metal to bulk aPC _ 4.0E-5pF, pPC _ 0 -- poly to bulk ] = { C: capacitor[n, Gnd] = Lambda* (Lambda*((a2M+l2M*w2M)*a2MC+(aM+lM*wM)*aMC+(aP+lP*wP)*aPC)+ (p2M+2*l2M+2*w2M)*p2MC+(pM+2*lM+2*wM)*pMC+(pP+2*lP)*pPC) }; -- WireCap DifCap: circuit[n | lD _ 0, wD _ 0, aD _ 0, pD _ 0]= { dc: Diffusion[n, Gnd | a _ (lD*wD+aD)*Lambda*Lambda, p _ (2*(lD+wD)+pD)*Lambda, Cj _ 8.90E-17, Cjm _ 2.25E-16, Pb _ 0.87, TDegC _ Temp] }; -- DifCap WireRes: circuit[nodeA, nodeB | l2M _ 0, w2M _ 3, lM _ 0, wM _ 3, lP _ 0, wP _ 2, lD _ 0, wD _ 2, s2MR _ 0.06, -- ohms/square sMR _ 0.06, sPR _ 40, sDR _ 30] = { R: resistor[nodeA, nodeB] = l2M/w2M*s2MR + lM/wM*sMR + lP/wP*sPR + lD/wD*sDR }; -- WireRes ConRes: circuit[nodeA, nodeB | n2MM _ 0, -- number of parallel 2nd layer metal to 1rst layer metal vias nMP _ 0, -- number of parallel 1rst layer metal to poly contacts nMD _ 0, -- number of parallel 1rst layer metal to diffusion contacts nPD _ 0, -- number of parallel poly to diffusion contacts, butting c2MMR _ 40, -- ohms/via, 2nd layer metal to 1rst layer cMPR _ 40, -- ohms/contact, metal-poly cMDR _ 25, -- ohms/contact, metal-diffusion cPDR _ 50 -- ohms/contact, poly-diffusion, with metal strap, i.e. butting contact ] = { R: resistor[nodeA, nodeB] = 1/(n2MM/c2MMR + nMP/cMPR + nMD/cMDR + nPD/cPDR) }; -- ConRes Stray: circuit[n | a2M _ 0, p2M _ 0, aM _ 0, pM _ 0, aP _ 0, pP _ 0, aD _ 0, pD _ 0 ] = { wireCap: WireCap[n | a2M _ a2M, p2M _ p2M, aM _ aM, pM _ pM, aP _ aP, pP _ pP]; difCap: DifCap[n | aD _ aD, pD _ pD]; }; -- Stray øFile: [Cherry]Cedar5.2>ProcessDefs>NMos4.0u75C.thy Last Edited by: SChen, October 24, 1984 6:30:17 pm PDT Change Log. Barth, July 8, 1983 4:17 PM SChen June 11, 1983 5:17 PM dc parameters cf. Doganis memo of May 17, 83 for run 65, wafer 9, location 125-127. SChen, October 24, 1984 6:18:37 pm PDT, corrected calculations for Ps/Pd using sdExtension. The following things ought to be done some day. Characterize transistor and parasitic parameters over process variations. Account for edge effects. Check that temperature model is correct. Compare Thyme output to actual circuit performance. Provide gate and overlap capacitance measurements. Account for variation in wire capacitance due to layers underneath, requires extractor enhancement. ÊQ˜Jšœ9™9Jšœ6™6J˜šÏbœ˜$JšÏkœžœ1˜9J˜˜&Jšœžœ ˜Jšœžœ˜Jšœžœ˜&Jšœžœ˜$Jšœžœ ˜#Jšœžœ ˜!J˜J˜J˜ J˜J˜J˜J˜J˜J˜J˜J˜ J˜ J˜J˜J˜ J˜J˜J˜ J˜J˜J˜ J˜—JšœÏc˜ —J˜šœ˜$Jšžœžœ1˜9J˜˜&Jšœžœ˜Jšœžœ˜Jšœžœ˜&Jšœžœ˜$Jšœžœ ˜#Jšœžœ ˜!J˜J˜J˜ J˜J˜J˜J˜J˜J˜J˜J˜ J˜ J˜J˜J˜ J˜J˜J˜ J˜J˜J˜ J˜—JšœŸ˜ —J˜šœŸ)˜?Jšœ$Ÿ˜6Jšœ Ÿ˜3Jšœ Ÿ˜(JšœŸ(˜CJšœŸ˜4JšœŸ˜'J˜J˜šžœ˜J˜;J˜8—JšœŸ ˜ J˜—Jšœ0˜6˜˜J˜J˜J˜J˜J˜ J˜ —JšœŸ ˜ —J˜šœ˜J˜J˜J˜J˜JšœŸ˜J˜ J˜ J˜JšžœK˜LJšœŸ ˜ —J˜šœ˜Jšœ Ÿ>˜IJšœ Ÿ7˜BJšœ Ÿ<˜GJšœ Ÿ:˜EJšœ Ÿ*˜6Jšœ Ÿ˜'Jšœ Ÿ ˜+Jšœ ŸG˜QJ˜JšžœJ˜KJšœŸ ˜ —J˜šœ˜J˜J˜J˜J˜J˜J˜˜J˜J˜J˜—J˜J˜%JšœŸ ˜ —šœ ™ Jšœ™šœ™JšœS™S—J™[J™—šœ/™/JšœI™IJšœ™Jšœ(™(Jšœ3™3Jšœ2™2Jšœd™d——…— h±