*REVISED TO VTI DOC 02-EC20-3   REV. *C 
*FILE ///USERS/GUNNING.PA/SPICE/VCMOS-C.DAT

* TYPICAL N CHANNEL ENHANCEMENT
.MODEL VENHT NMOS(LEVEL=2 VTO=0.78 TOX=400E-10 NSUB=8.0E15
+XJ=0.15U LD=0.2U UO=650 UCRIT=0.62E5 UEXP=0.125
+VMAX=5.1E4 NEFF=4.0 DELTA=1.4 RSH=37 CGSO=2.95E-10 
+CGDO=2.95E-10 CJ=195U CJSW=500P MJ=0.76 MJSW=0.3 
+PB=0.8 )
*MFL=0 MFW=-.15U)

* TYPICAL P CHANNEL ENHANCEMENT
.MODEL VENPT PMOS(LEVEL=2 VTO=-0.8 TOX=400E-10 NSUB=6.0E15
+XJ=0.05U LD=0.2U UO=255 UCRIT=0.86E5 UEXP=0.29
+VMAX=3.0E4 NEFF=2.65 DELTA=1.0 RSH=125 CGSO=2.65E-10 
+CGDO=2.65E-10 CJ=250U CJSW=350P MJ=0.535 MJSW=0.34
+PB=0.8 )
*MFL=0 MFW=-.2U)

* BEST N CHANNEL ENHANCEMENT (FAST-FAST)
.MODEL VENHB NMOS(LEVEL=2 VTO=0.68 TOX=370E-10 NSUB=6.0E15
+XJ=0.15U LD=0.2U UO=680 UCRIT=0.62E5 UEXP=0.125
+VMAX=5.1E4 NEFF=4.0 DELTA=1.4 RSH=32 CGSO=3.15E-10 
+CGDO=3.15E-10 CJ=175U CJSW=460P MJ=0.76 MJSW=0.3 
+PB=0.8 )
*MFL=-.175U MFW=.05U)

* BEST P CHANNEL ENHANCEMENT (FAST-FAST)
.MODEL VENPB PMOS(LEVEL=2 VTO=-0.65 TOX=370E-10 NSUB=5.4E15
+XJ=0.05U LD=0.2U UO=270 UCRIT=0.86E5 UEXP=0.29
+VMAX=3.0E4 NEFF=2.65 DELTA=1.0 RSH=105 CGSO=2.85E-10 
+CGDO=2.85E-10 CJ=225U CJSW=300P MJ=0.535 MJSW=0.34
+PB=0.8 )
*MFL=-.175U MFW=0)

* WORST N CHANNEL ENHANCEMENT (SLOW-SLOW)
.MODEL VENHW NMOS(LEVEL=2 VTO=0.88 TOX=430E-10 NSUB=1.0E16
+XJ=0.15U LD=0.2U UO=620 UCRIT=0.62E5 UEXP= 0.125
+VMAX=5.1E4 NEFF=4.0 DELTA=1.4 RSH=42 CGSO=2.75E-10 
+CGDO=2.75E-10 CJ=215U CJSW=540P MJ=0.76 MJSW=0.3 
+PB=0.8 )
*MFL=.175U MFW=-.35U)

* WORST P CHANNEL ENHANCEMENT (SLOW-SLOW)
.MODEL VENPW PMOS(LEVEL=2 VTO=-0.95 TOX=430E-10 NSUB=6.6E15
+XJ=0.05U LD=0.2U UO=240 UCRIT=0.86E5 UEXP=0.29
+VMAX=3.0E4 NEFF=2.65 DELTA=1.0 RSH=145 CGSO=2.45E-10 
+CGDO=2.45E-10 CJ=275U CJSW=400P MJ=0.535 MJSW=0.34
+PB=0.8 )
*MFL=.175U MFW=-.4U)

*FAST-SLOW N CHANNEL ENHANCEMENT
.MODEL VENHFS NMOS(LEVEL=2 VTO=0.68 TOX=400E-10 NSUB=6.0E15
+XJ=0.15U LD=0.2U UO=680 UCRIT=0.62E5 UEXP=0.125
+VMAX=5.1E4 NEFF=4.0 DELTA=1.4 RSH=32 CGSO=2.95E-10 
+CGDO=2.95E-10 CJ=195U CJSW=500P MJ=0.76 MJSW=0.3 
+PB=0.8 )
*MFL=0 MFW=-.15U)

*FAST-SLOW P CHANNEL ENHANCEMENT
.MODEL VENPFS PMOS(LEVEL=2 VTO=-0.95 TOX=400E-10 NSUB=6.6E15
+XJ=0.05U LD=0.2U UO=240 UCRIT=0.86E5 UEXP=0.29
+VMAX=3.0E4 NEFF=2.65 DELTA=1.0 RSH=145 CGSO=2.65E-10 
+CGDO=2.65E-10 CJ=250U CJSW=350P MJ=0.535 MJSW=0.34
+PB=0.8 )
*MFL=0 MFW=-.2U)

*SLOW-FAST N CHANNEL ENHANCEMENT
.MODEL VENHSF NMOS(LEVEL=2 VTO=0.88 TOX=400E-10 NSUB=1.0E16
+XJ=0.15U LD=0.2U UO=620 UCRIT=0.62E5 UEXP= 0.125
+VMAX=5.1E4 NEFF=4.0 DELTA=1.4 RSH=42 CGSO=2.95E-10 
+CGDO=2.95E-10 CJ=195U CJSW=500P MJ=0.76 MJSW=0.3 
+PB=0.8 )
*MFL=0 MFW=-.15U)

*SLOW-FAST P CHANNEL ENHANCEMENT
.MODEL VENPSF PMOS(LEVEL=2 VTO=-0.65 TOX=400E-10 NSUB=5.4E15
+XJ=0.05U LD=0.2U UO=270 UCRIT=0.86E5 UEXP=0.29
+VMAX=3.0E4 NEFF=2.65 DELTA=1.0 RSH=105 CGSO=2.65E-10 
+CGDO=2.65E-10 CJ=250U CJSW=350P MJ=0.535 MJSW=0.34
+PB=0.8 )
*MFL=0 MFW=-.2U)


* TYPICAL NPN bipolar model 
.MODEL NPN NPN(IS=1.0E-16 BF=100 NF=1 VAF=200 IKF=.01 
+ISE=1.0e-13 NE=1.5 BR=1 NR=1 VAR=200 IKR=.01 ISC=1.0e-13 
+NC=2  RB=100 IRB=.1 RB=10 RE=1 RC=10 CJE=2PF VJE=.75 
+MJE=.33 TF=.1Ns XTF=0 ITF=0 PTF=0 CJC=2PF VJC=.75 MJC=.33 
+XCJC=1 TR=10Ns  CJS=2PF VJS=.75 MJS=.5 XTB=0 EG=1.11 XTI=3 
+KF=0 AF=1 FC=.5)


* TYPICAL PNP bipolar model
.MODEL PNP PNP(IS=1.0E-16 BF=100 NF=1 VAF=200 IKF=.01 
+ISE=1.0e-13 NE=1.5 BR=1 NR=1 VAR=200 IKR=.01 ISC=1.0e-13 
+NC=2 RB=100 IRB=.1 RB=10 RE=1 RC=10 CJE=2PF VJE=.75 MJE=.33 
+TF=.1Ns XTF=0 ITF=0 PTF=0 CJC=2PF VJC=.75 MJC=.33 XCJC=1 
+TR=10Ns CJS=2PF VJS=.75 MJS=.5 XTB=0 EG=1.11 XTI=3 
+KF=0 AF=1 FC=.5)

*Model for BFR96
.MODEL BFR96 NPN(IS=1.0E-16 BF=100 NF=1 VAF=200 IKF=.01 
+ISE=1.0e-13 NE=1.5 BR=1 NR=1 VAR=200 IKR=.01 ISC=100e-9 
+NC=2 RB=100 IRB=.1 RB=10 RE=1 RC=10 CJE=2PF VJE=.75 MJE=.33 
+TF=.1Ns XTF=0 ITF=0 PTF=0 CJC=3.5PF VJC=.75 MJC=.33 XCJC=1 
+TR=10Ns CJS=2PF VJS=.75 MJS=.5 XTB=0 EG=1.11 XTI=3 KF=0 
+AF=1 FC=.5)

*Model for Typical Diode
.MODEL D D(IS=1.0E-14 RS=10 N=1.0 TT=.1Ns
+CJO=2PF VJ=.6 M=.5 EG=1.11 XTI=3.0
+KF=0 AF=1 FC=.5 BV=40.0 IBV=1.0E-3)